With the E-MOSFET, when gate input voltage is zero, drain current is? IDSS can be defined as?
Understand the Problem
The questions address the characteristics of E-MOSFET (Enhanced Metal-Oxide-Semiconductor Field-Effect Transistor) regarding drain current behavior when certain gate input voltages are applied.
Answer
E-MOSFET drain current is zero at zero gate voltage. IDSS is maximum current at VGS = 0V (for JFET).
The final answer is: With the E-MOSFET, when gate input voltage is zero, drain current is zero. IDSS can be defined as the maximum possible current with VGS held at 0 V for a JFET.
Answer for screen readers
The final answer is: With the E-MOSFET, when gate input voltage is zero, drain current is zero. IDSS can be defined as the maximum possible current with VGS held at 0 V for a JFET.
More Information
E-MOSFETs require a positive voltage to conduct, unlike depletion-mode devices. IDSS is commonly associated with JFETs, where it describes the drain current with an open gate.
Tips
A common mistake is to confuse the behavior of enhancement-mode MOSFETs with depletion-mode or JFETs, where IDSS is more relevant.
Sources
- Solved With the E-MOSFET, when gate input voltage is zero - Chegg - chegg.com
- 24 - MCQ Questions - mcqquestions.net
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