Negative Photoresist Cross-Section Quiz
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Questions and Answers

What is the purpose of the mask shown in the figure?

  • To pattern the Si3N4 layer on the Si substrate (correct)
  • To expose the negative photoresist on the Si3N4 layer
  • To deposit a layer of Si3N4 on the Si substrate
  • To remove the Si3N4 layer from the Si substrate
  • What is the thickness of the Si3N4 layer deposited on the Si wafer?

  • 1 point
  • 500 nm and 1 point thick (correct)
  • 500 nm
  • The thickness is not specified
  • What type of photoresist is used in the process?

  • Chemically amplified photoresist
  • The type of photoresist is not specified
  • Positive photoresist
  • Negative photoresist (correct)
  • What is the expected cross-sectional structure after development of the negative photoresist?

    <p>Si substrate → Si3N4 → NPR</p> Signup and view all the answers

    What type of defect is likely being referred to in the incomplete sentence at the end?

    <p>A defect in the photomask</p> Signup and view all the answers

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