5 Questions
What is the purpose of the mask shown in the figure?
To pattern the Si3N4 layer on the Si substrate
What is the thickness of the Si3N4 layer deposited on the Si wafer?
500 nm and 1 point thick
What type of photoresist is used in the process?
Negative photoresist
What is the expected cross-sectional structure after development of the negative photoresist?
Si substrate → Si3N4 → NPR
What type of defect is likely being referred to in the incomplete sentence at the end?
A defect in the photomask
Test your knowledge on negative photoresist in semiconductor manufacturing. Identify how the cross-section of the developed structure looks like after exposure and development processes.
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