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Questions and Answers
What is the purpose of the mask shown in the figure?
What is the purpose of the mask shown in the figure?
- To pattern the Si3N4 layer on the Si substrate (correct)
- To expose the negative photoresist on the Si3N4 layer
- To deposit a layer of Si3N4 on the Si substrate
- To remove the Si3N4 layer from the Si substrate
What is the thickness of the Si3N4 layer deposited on the Si wafer?
What is the thickness of the Si3N4 layer deposited on the Si wafer?
- 1 point
- 500 nm and 1 point thick (correct)
- 500 nm
- The thickness is not specified
What type of photoresist is used in the process?
What type of photoresist is used in the process?
- Chemically amplified photoresist
- The type of photoresist is not specified
- Positive photoresist
- Negative photoresist (correct)
What is the expected cross-sectional structure after development of the negative photoresist?
What is the expected cross-sectional structure after development of the negative photoresist?
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What type of defect is likely being referred to in the incomplete sentence at the end?
What type of defect is likely being referred to in the incomplete sentence at the end?
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