Electronics Devices and Circuits Past Paper 2022 PDF - December Exam
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2022
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Summary
This is a past paper for a December 2022 undergraduate electronics and telecommunications engineering examination. The paper covers semiconductor pn junction diodes, amplifiers, MOSFETs, and other related topics. Each question has multiple parts and carries varied marks.
Full Transcript
## Paper / Subject Code: 51222 / Electronics Devices and Circuits ### QP CODE: 10014063 **Time: 3 Hours** **Date: 23/11/2022** **Max. Marks: 80** ### Q1 Q1 is compulsory. Attempt any three from Q2 to Q6. **Solve any Four: 5 marks each** * **A**: Explain the operation of a semiconductor pn juncti...
## Paper / Subject Code: 51222 / Electronics Devices and Circuits ### QP CODE: 10014063 **Time: 3 Hours** **Date: 23/11/2022** **Max. Marks: 80** ### Q1 Q1 is compulsory. Attempt any three from Q2 to Q6. **Solve any Four: 5 marks each** * **A**: Explain the operation of a semiconductor pn junction diode with the help of VI characteristics. * **B**: Explain Miller's capacitance theorem. * **C**: Compare BJT CE amplifier and JFET CS amplifier. * **D**: What is crossover distortion in Class B power amplifiers? * **E**: Let VDD = 5V, Vt,1 = 1V, kn,1' = 20µA/V² and R = 1ΚΩ. What should be (W/L)1 needed for creating Iref = 1mA? What should be (W/L)2 if I = 7mA? Refer Fig. 1 ### Q2 **Design a feedback bias circuit for n-channel E-MOSFET with operating drain current of 0.5 mA: 10 marks each** * **A**: Given: VDD = 5 V, k’n = 100 μA/V², W = 1.8 µm, L = 180 nm, Vton = 1 V, Use a standard resistor value for Rp and recalculate ID and VD. Refer fig. 2. ### Q3 * **A**: Explain construction and working of n-channel E-MOSFET: 5 marks * **B**: What is thermal runaway and how it can be avoided?: 5 marks * **C**: Calculate low cutoff frequencies due to coupling and bypass capacitors of the circuit given in fig. 4: 10 marks ### Q4 * **A**: Determine fL and fH for the given circuit. Assume IE = 1.65 mA. Refer Fig 4: 5 marks * **B**: Draw a small signal equivalent circuit of an E-MOSFET CS amplifier given in fig. 3 and derive the expression for voltage gain, input resistance and output resistance. ### Q5 * **A**: Design a voltage divider bias circuit to operate at the given conditions. Calculate the stability factors S(ICO), S(VBE), S(β). Refer Fig. 6: 10 Marks * **B**: Determine the input impedance, output impedance, voltage gain and current gain for the given circuit. Refer fig. 7: 10 Marks ### Q6 * **A**: Derive the equation of CMRR for the MOS differential pair amplifier: 10 Marks * **B**: Write short note on: * **i**: E-MOSFET as a differential amplifier: 5 Marks * **ii**: Zener diode as a voltage regulator: 5 Marks ## Page 1 of 4 ## Paper / Subject Code: 51222 / Electronics Devices and Circuits ### QP CODE: 10014063 * **A**: Draw and explain high frequency model for BJT in CE configuration: 5 marks * **B**: Draw and explain a series fed class A power amplifier with the help of neat diagram and waveforms and derive the expression of power efficiency: 10 Marks ## Page 2 of 4 ## Paper / Subject Code: 51222 / Electronics Devices and Circuits ### QP CODE: 10014063 ## Page 3 of 4 ## Paper / Subject Code: 51222 / Electronics Devices and Circuits ### QP CODE: 10014063 ## Page 4 of 4