Basic Electronics Past Paper 2016 PDF

KWAME NKRUMAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, KUMASI INSTITUTE OF DISTANCE LEARNING B.Sc. (Engineering), Second-Semester Examination, April/May, 2016 F...

KWAME NKRUMAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, KUMASI INSTITUTE OF DISTANCE LEARNING B.Sc. (Engineering), Second-Semester Examination, April/May, 2016 First (1st) Year EE 152: BASIC ELECTRONICS TIME: 2 HRS 30 MINS PROGRAM OF STUDY:............................................................................. INDEX NO:………..........…………............................................................. Instructions i. Candidates are to indicate their Index Number and Program of Study in the spaces provided. ii. Candidates are to submit the question booklet together with all rough work if any. iii. Circle and indicate, from the options lettered A to D, the most suitable answer to the question statements iv. Shade the most suitable answer to the question statements on the Scannable Sheet provided v. Each correct answer carries half (½) a mark 1 MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question. 1) In the saturation region, the base-emitter junction ________. 1) A) and the base-collector junctions are both forward-biased B) is reversed-biased while the base-collector junction is forward-biased C) is forward-biased while the base-collector junction is reversed-biased D) and the base-collector junctions are both reverse-biased 2) A(n) ________ is added to the fixed-bias configuration to improve bias stability. 2) A) base voltage B) collector resistor C) emitter resistor D) All of the above 3) The maximum collector current for this circuit is ________. 3) A) 1.13 mA B) 1.0 mA C) 6 mA D) 12 mA 4) For the CB configuration breakdown occurs when ________ is too high but in the CC configuration 4) too high a ________ results in breakdown. A) VCB, VBE B) VCB, VCE C) VBE, VCE D) VBE, VCE 5) The point of intersection between the characteristic curve of the diode and the resistors loadline is 5) known as the ________. A) Q-point B) point of operation C) quiescent point D) All of the above 6) The collector-feedback bias configuration's input resistance is related to the ________. 6) A) collector resistor B) emitter resistor C) base feedback resistor D) device beta 7) Which of the following expressions is true? 7) ΔIC IC A) αdc= where VCB is constant B) αdc= ΔIE IB ΔIC IC C) αdc= where VCE is constant D) αdc= ΔIB IE 8) Pentavalent atoms are often referred to as ________. 8) A) donor atoms B) majority carriers C) acceptor atoms D) minority carriers 2  9) When voltage-divider bias is used, it is considered appropriate to use the approximate analysis to 9) determine the bias condition when the resistance R2 is ________ (l+β)RE. A) very much less than B) greater than C) less than D) very much greater than 10) Which one of the following devices is roughly equivalent to a diode? 10) A) A one-way valve B) A pressure regulator C) A spring D) None of the above 11) The difference between the resulting equations for a network in which an npn transistor has been 11) replaced by a pnp transistor is ________. A) the value of β B) the sign associated with the particular quantities C) the values of the resistors D) All of the above 12) A given BJT has an emitter current of 12 mA and a base current of 600 μA. What is the value of 12) β dc? A) 19 B) 200 C) 20 D) 21 13) When a p-n junction's depletion layer is narrowed and the device acts as a nearly perfect 13) conductor, it is ________. A) reverse-biased B) forward-biased C) unbiased D) None of the above 14) The base current for the circuit below is ________. 14) A) 6 mA B) 0.94 mA C) 12 mA D) 1.37 mA 15) When a BJT is in cutoff, the collector-to-emitter voltage is typically equal to ________. 15) A) collector current times collector resistor B) emitter voltage C) 0.3 Volts D) collector supply voltage 16) What denotes the maximum voltage a diode can withstand when reverse-biased? 16) A) Peak inverse voltage B) Peak forward-bias voltage C) Reverse breakdown D) Reverse bias 17) When a BJT has its base-emitter junction forward biased and its collector-base junction reverse 17) biased, it is biased in the ________. A) cutoff region B) saturation region C) passive region D) active region 18) In the active region, the base-emitter junction ________. 18) A) and the base-collector junctions are both forward-biased B) and the base-collector junctions are both reverse-biased C) is reverse-biased while the base-collector junction is forward-biased D) is forward-biased while the base-collector junction is reversed-biased 3 19) Why is design for a specific bias point desirable for most amplifiers? 19) A) To meet manufacturer suggested opening point. B) It allows optimum dc operation of the circuit. C) It allows optimum ac operation of the circuit. D) All of the above 20) Calculate the peak current that will flow through this circuit, assuming an ideal diode. 20) A) 16.97 mA during the positive half cycle B) 12 mA during the negative half cycle C) 12 mA during the positive half cycle D) 16.97 mA during the negative half cycle 21) The term ________ is applied to a material that offers a very low level of conductivity under 21) pressure from an applied voltage. A) semiconductor B) conductor C) ionic D) insulator 22) The reverse saturation current of a diode will just about ________ for every 10°C rise in the diode 22) temperature. A) decrease proportionately with temperature B) increase proportionately with temperature C) double D) half 23) For basic operation of a transistor the base-emitter junction is ________ biased. 23) A) reverse- B) forward- C) semi- D) not 24) A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 24) μA, IC changes by 10 mA. What is the value of the β dc for this device? A) 800 B) 100 C) 10 D) 80 25) The DC or the static resistance of the diode is given by ________. 25) VD1-VD2 VD A) RD = B) RD = ID1-ID2 ID VVD C) RD = D) All of the above can be used. VID 26) When designing a voltage-divider bias circuit, the divider resistors ________. 26) A) determine the base voltage as the drop across base-common resistor B) should carry currents that are 10 times the base current C) should carry approximately equal current D) All of the above 4 27) When a BJT is biased in the cutoff region the collector-to-emitter voltage is typically equal to 27) ________. A) 0.03 V B) the collector current times the collector resistor C) the collector supply voltage D) the emitter voltage 28) When a BJT transistor is used in a switching circuit, it operates in the ________. 28) A) active region only B) saturation and active regions C) active and cutoff regions D) saturation and cutoff regions 29) The most frequent application for a ________ is in regulator networks and as a reference voltage. 29) A) half-wave rectifier B) ideal diode C) Zener diode D) full-wave rectifier 30) Silicon diodes have been more significantly developed than germanium because ________. 30) A) it is more tolerant of heat B) it is easier to produce C) it has a lower forward voltage drop D) it is cheaper 31) The current flows through the load resistor in this circuit during the ________. 31) A) positive half cycle of the input waveform B) negative half cycle of the input waveform C) entire input waveform D) The diode will block all current and there will be no current flowing through the load. 32) A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 32) μA, IC changes by 10 mA. What is the value of the β ac for this device? A) 100 B) 10 C) 80 D) 800 33) Describe the effect of a capacitor-input filter on the output of a rectifier. 33) A) Large capacitor in parallel with R L will reduce large voltage variations B) Any size capacitor will smooth out voltage variations as long as it is in series with Rl C) Small capacitor in parallel with the load resistor will absorb current variations D) Capacitor in series with load resistor will absorb large voltage variations 34) When a transistor is in saturation VCE is approximately equal to ________. 34) A) collector supply voltage B) 0.3 Volts C) collector current times collector resistor D) emitter voltage 35) A given transistor has ratings of maximum collector current equal to 200 mA and a beta that varies 35) between 150 and 200. What is the maximum allowable value of base current for the device? A) 1 mA B) 4 mA C) 1.33 mA D) None of the above 5 36) Which amplifier configuration is the least often used? 36) A) Common Base B) Common Collector C) Darlington Pair D) Common Emitter 37) When a Zener diode circuit is used to stabilize the output voltage given a fixed load resistor and a 37) variable input voltage, the input voltage must be ________. A) large enough to turn off the Zener diode B) small enough to turn on the Zener diode C) small enough to turn off the Zener diode D) large enough to turn on the Zener diode 38) Transistor circuits that are quite stable and relatively insensitive to temperature variations have 38) ________. A) relative high supply voltages B) small betas C) large betas D) low supply voltages 39) If VCE is 13 V and Vcc is 15 V, this transitor is 39) A) properly biased B) approaching cutoff C) a pnp transistor D) approaching saturation 40) Which transistor amplifier configuration is the most commonly used? 40) A) common-collector B) common-emitter C) common-base D) None of these are used more often than the others. 41) An open diode in a bridge rectifier circuit will produce what type of waveform? 41) A) Half-wave with decreased ripple B) Half-wave with increased ripple C) Full-wave with increased ripple D) Full-wave with decreased ripple 42) For basic operation of a transistor the collector-base junction is ________ biased. 42) A) reverse- B) not C) forward- D) semi- 43) In the cut-off region, the base-emitter junction ________. 43) A) is reversed-biased while the base-collector junction is forward-biased B) and the base-collector junctions are both reverse-biased C) is forward-biased while the base-collector junction is reverse-biased D) and the base-collector junctions are both forward-biased 44) Generally a silicon diode is in the ________ state if the current established by the applied voltage 44) source is in the direction of the diode symbol's arrow and VD is greater than or equal to 0.7 V. A) saturated B) off C) reverse-biased D) on 45) The input resistance of a stabilized fixed-bias circuit configuration is ________. 45) A) directly related to the emitter resistor B) inversely related to β C) inversely related to the emitter resistor D) directly related to the collector resistor 46) A collector-feedback bias circuit is found to be in saturation. Which of the following could cause 46) this condition? A) The collector resistor is open. B) A solder bridge across the base resistor. C) The transistor is shorted base-to-emitter. D) The base resistor is open. 6 47) When designing a current-gain-stabilized voltage-divider bias circuit such as this one, the rule of 47) thumb used for the emitter voltage is ________. A) VB = VCC / 10 B) VCE = VCC / 10 C) VE = VCC / 10 D) VC = VCC / 10 48) In the Zener region the current ________ and the voltage across the diode ________. 48) A) can increase a lot; can increase a lot B) can increase a lot; is almost constant C) is almost constant; can increase a lot D) is almost constant; is almost constant 49) Calculate the base current for this circuit. 49) A) 6.0 mA B) 0.056 mA C) 0.904 mA D) 0.96 mA 50) DC beta refers to: 50) A) a transistor's gain characteristics B) the ratio of emitter current to collector current C) the ratio of base current to collector current D) both a and b 7 51) Which of the following biasing combinations is not normally associated with one of the three 51) transistor operating regions'? A) E-B junction = forward, C-B junction = reverse B) E-B junction = reverse, C-B junction = reverse C) E-B junction = reverse, C-B junction = forward D) All of the above 52) When a p-n junction is reverse-biased, the depletion layer is ________ and the device acts as a 52) near-perfect ________. A) narrowed; insulator B) widened; insulator C) narrowed; conductor D) widened; conductor 53) The term ________ is applied to any material that supports a generous flow of charge when a 53) voltage source of limited magnitude is applied across its terminals. A) semiconductor B) dielectric C) insulator D) conductor 54) This emitter-stabilized bias circuit is operating in the ________. 54) A) cutoff region B) The transistor is not properly biased. C) saturation region D) active region 55) A cutoff transistor has: 55) A) VCE cannot be calculated at cutoff B) VCE = VCC C) VCE = 0 V D) none of the above 56) When the diode in a half-wave rectifier points toward the load, the output from the rectifier is 56) ________. A) positive B) negative C) either positive or negative, depending on the polarity of the transformer secondary voltage D) full-wave 57) In a conductor, the energy levels of the conduction and valence band 57) A) are very close in value B) are negative C) overlap D) are the same 8 58) What statement best describes the action of a zener diode? 58) A) Zener diodes regulate voltage upon exceeding reverse breakdown voltage B) Zener diodes are used mostly in tuning circuits C) When the diode is biased into saturation, it tends to regulate voltage because of it's bulk resistance D) Zener diodes regulate voltage levels below their minimum forward bias 59) In the design of an emitter-bias stabilized circuit engineering, judgment must be used because the 59) ________. A) relative voltage levels have not been defined B) emitter resistor is usually unknown C) collector resistor is usually unknown D) All of the above 60) Pentavalent elements have ________ valence electrons. 60) A) 5 B) 3 C) 4 D) 1 61) There are transistors that are called switching transistors because ________. 61) A) of the speed at which they can be changed from on to off B) of the voltage they can transfer from input to output C) of the power they can transfer from input to output D) they have a built in switch 62) The majority carriers in the p region of a diode 62) A) a much fewer in number than the majority carriers in the n region B) are electrons C) a much less in number than the majority carriers in the n region D) are holes 63) Doping is used to ________. 63) A) increase the conductivity of an intrinsic semiconductor B) increase the insulative quality of an intrinsic semiconductor C) stabilize the conductivity of an intrinsic semiconductor D) decrease the conductivity of an intrinsic semiconductor 64) The term bipolar means: 64) A) the use of both holes and electrons as carriers B) electrons make up the majority carriers C) polarity is unimportant D) diodes only 65) Voltage-divider bias stability is ________. 65) A) dependent on the collector resistor B) independent of beta C) dependent on alpha D) dependent of beta 66) Collector-feedback bias ________. 66) A) is not totally independent of beta B) provides an improved level of stability over fixed-bias C) provides a feedback path from collector to base D) All of the above 9 67) Calculate the collector-emitter voltage for this emitter-stabilized circuit. 67) A) 0.1335 V B) 14.24 V C) 10.68 V D) 4.28 V 68) When designing for best bias stability the ________ configuration should be chosen. 68) A) collector-feedback bias B) voltage-divider bias C) fixed-bias D) emitter-feedback bias 69) A transistor in saturation is equivalent to what condition? 69) A) a closed switch B) an open switch C) a or b depending on where voltage is measured D) none of the above 70) The condition where an increase in bias current will not cause further increases in collector current 70) is called ________. A) saturation B) active operation C) cutoff D) All of the above 71) What is a rectifier? 71) A) An electronic device that converts ac into pulsating dc B) An electronic device that converts pulsating dc into ac C) An electronic device that converts audio signals to radio frequency D) An electronic device that converts pulsating ac into dc 72) A typical Zener diode regulator circuit uses a ________. 72) A) resistor in parallel with the load B) dropping resistor in series with the load C) Zener diode in parallel with the series resistor D) Zener diode in series with the load 73) When a BJT has its base-emitter junction reverse biased and its collector-base junction reverse 73) biased, it is in the ________. A) saturation region B) cutoff region C) active region D) passive region 10 74) When a BJT is operating in the saturation region the voltage drop from the collector to the emitter 74) VCE is approximately equal to ________. A) the collector supply voltage B) the collector current times the collector resistor C) zero (about 0.3 Volts) D) the emitter voltage 75) The maximum reverse bias potential that can be applied to a Zener diode before it enters the Zener 75) region is called the ________. A) threshold voltage B) PIV C) depletion voltage D) barrier voltage 76) For this clipping circuit, what is the maximum output voltage when the diode is not conducting? 76) A) + 19.47 V B) - 16.97 V C) + 16.97 V D) + 2.5 V 77) When a p-n junction is reverse-biased, its junction resistance is ________. 77) A) low B) high C) constantly changing D) determined by the components that are external to the device 78) What can be said regarding the energy level of an electron? 78) A) Electrons exhibit energy characteristics only in the presence of protons B) Electrons in the shell closest to the nucleus of an atom have the highest energy level C) Electrons in the outermost shell have the highest energy level D) All electrons have the same energy level 11 79) Which of the following is true for this BJT circuit? 79) A) The base-emitter and collector-base junctions are both reverse-biased. B) The base-emitter and collector-base junctions are both forward-biased. C) The base-emitter junction is reverse-biased and the collector-base junction is forward-biased. D) The base-emitter junction is forward-biased and the collector-base junction is reversed-biased. 80) For this series diode configuration, use the diode characteristic to estimate the value of VR. 80) A) 92 mV B) 9.2 V C) 0.92 V D) 10 V 81) When a BJT has its base-emitter junction forward biased and its collector-base junction also 81) forward biased, it is in the ________. A) active region B) passive region C) cut-off region D) saturation region 82) Two of the factors associated with bias stability are ________. 82) A) the β and the junction temperature B) age and amount of use C) voltage and current D) None of the above 83) A full-wave center-tapped rectifier has a secondary maximum voltage of 20 Vm and a 4.7 kΩ load 83) resistance. What is the dc load current for the circuit? A) 1.4 mA B) 1.26 mA C) 2.61 mA D) 629.8 mA 84) In a p-type material, the minority carriers are ________. 84) A) conduction-band electrons B) valence-band holes C) valence-band electrons D) conduction-band electrons 12 85) A BJT has measured dc current values of IB = 1 mA and IC = 80 mA. When IB is varied by 100 μA, 85) IC changes by 10 mA. What is the value of β ac for the device? A) 100 B) 80 C) 10 D) 800 86) What is the purpose of a current-limiting resistor in a diode circuit? 86) A) A current-limiting resistor is only necessary if it is reverse biased B) The resistor prevents the diode from becoming reverse-biased C) A properly biased diode is like a short circuit, therefore a resistor provides a voltage drop D) The resistor will increase the PIV rating of the diode 87) Calculate the base current for this voltage-divider bias circuit. 87) A) 76.8 μA B) 596.55 μA C) 34.37 μA D) 233.78 μA 88) VCC = 12 volts, RC = 1k, determine the load line IC and VCE intercepts 88) A) IC =.012mA and VCE = 1.2 volts B) IC = IB = 12mA and VCE = 12m volts C) IC = 12mA and VCE = 12 volts D) IC = 1.2mA and VCE = 12m volts 89) A p-n junction is forward biased when ________. 89) A) the applied potential causes the n-type material to be more negative than the p-type material B) the applied potential causes the n-type material to be more positive than the p-type material C) both materials are at the same potential D) None of these 90) When in its "on" state, the voltage across an ideal Zener diode, VZ ________. 90) A) gets larger with an increase in applied voltage B) gets smaller with an increase in applied voltage C) increases sharply with a decrease in applied voltage D) None of these 91) Which of the following is not a commonly used semiconductor material'? 91) A) germaniun B) carbon C) silicon D) lead 92) For a given BJT, β = 400. What is the value of α for the device? 92) A) 1.00 B) 1.0025 C) 0.002 D) 0.9975 13  93) When a BJT is biased in the active region, its base-emitter junction is ________-biased and its 93) collector-base junction is ________-biased. A) reverse; forward B) forward; reverse C) reverse; reverse D) forward; forward 94) A Zener diode is designed to operate in the ________ region of its characteristic curve. 94) A) reverse breakdown B) zero voltage C) reverse bias D) forward operating 95) When trivalent elements are used in doping, the resulting material is called ________ material and 95) has an excess of ________. A) p-type; conduction-band electrons B) n-type; valence-band holes C) p-type; valence-band holes D) n-type; conduction-band electrons 96) When recombination occurs, an electron 96) A) loses energy B) drops into the valence band C) drops into a hole D) all of the above 97) Collector feedback bias works on what principle? 97) A) falling collector currents tend to attenuate base current B) rising collector currents tend to attenuate base current C) base current will always remain constant D) positive feedback adds to collector current 98) The emitter-follower configuration has ________. 98) A) a 180° phase shift B) the emitter connected to dc ground potential C) an output voltage slightly greater than the input voltage D) None of the above 99) The typical range of the ac resistance of a diode in the active region is ________. 99) A) 100 Ω to 500 Ω B) 1 Ω to 10 Ω C) 1 Ω to 100 Ω D) 50 Ω to 100 Ω 100) In a Common-Emitter amplifier 100) A) the emitter is always above ground potential B) the emitter is the reference for the input signal C) the output is taken from the collector D) the output signal is taken from the emitter 101) An npn BJT has the following values meausred: Vc = 8.3 V, VE = 1.1 V and Vcc = 18 V. The value 101) of VCE must be A) Cannot be deternined, it depends on the value of β. B) 8.6 V C) 9.4 V D) 27.4 V 102) When pentavalent elements are used in doping, the resulting material is called ________ material 102) and has an excess of ________. A) p-type; conduction-band electrons B) p-type; valence-band holes C) n-type; valence-band holes D) n-type; conduction-band electrons 14 103) When a BJT is biased in the cut-off region, its base-emitter junction is ________-biased and its 103) collector-base junction is ________-biased. A) forward; reverse B) forward; forward C) reverse; reverse D) reverse; forward 104) A given BJT has an emitter current of 15 mA and a collector current of 14.95 mA. What is the exact 104) value of β? A) 300 B) 250 C) 1.003 D) 299 105) If the base of a transistor is open, the voltage at the collector will be 105) A) it dpends on the beta of the transitor B) VCC C) VCC/2 D) VB 106) Increasing the temperature of a forward-biased diode ________. 106) A) causes forward current to increase B) causes forward current to decrease C) has no significant effect effect on the forward current D) None of these 107) When a BJT has its base-emitter junction reverse biased and its base-collector junction forward 107) biased, it is biased in the ________. A) saturation region B) cutoff region C) passive region D) active region 108) As the device temperature increases, semiconductor materials tend to have ________. 108) A) an increasing number of free electrons B) lower conduction levels C) relatively unchanged conduction conduction levels D) a decreasing number of free electrons 109) In a small-signal transistor, the typical range of the parameter β is ________. 109) A) large and in the range of about 50 to 400 B) between 0 and 100 C) greater than 100 D) almost equal to 100 but always less than 100 (90 to 100) 110) The common-emitter, forward-current, amplification factor is better known as ________. 110) A) dc β B) dc α C) ac α D) ac β 111) The Zener diode must be operated such that ________. 111) A) IZ × VZ = PZ B) the applied voltage is greater than VZ C) PZ is less than the specified PZmax D) All of these 112) A p-n junction is reverse biased when ________. 112) A) the current flow across the junction is based on minority carrier transfer B) the applied potential causes the n-type material to be more positive than the p-type material C) the applied potential causes the p-type material to be more negative than the n-type material D) All of the above 15 113) Which best describes a conducting forward-biased diode? 113) A) Negative cathode, positive anode VF = 0.7 volts B) Positive cathode, negative anode VF =.2 volts C) Negative cathode, positive anode VF =.2 volts D) Positive cathode, negative anode VF = 10 volts 114) If one silicon diode and one germanium diode are connected in series, the voltage drop across the 114) combination of the two diodes will be equal to ________. A) the forward drop equal to that of the germanium diode B) the forward drop equal to that of the silicon diode C) the forward drop equal to that of the difference of the voltage drops across the two diodes D) the forward drop equal to that of the sum of the voltage drops across the two diodes 115) As semiconductor devices have become ________ one of the primary purposes of the container is 115) simply to provide a means for physical handling. A) miniaturized B) more powerful C) widely used D) larger 116) When the Zener regulator is used to stabilize the output voltage, given a fixed input voltage and a 116) variable load resistance, a load resistance that is too small results in ________. A) VZ being equal to Vin B) VL being greater than VZ C) VL being less than VZ D) VL being equal to VZ 117) The diode electrode with p-type material is called the ________. 117) A) cathode B) Zener region C) depletion region D) anode 118) A positive full-wave center-tapped rectifier has a secondary voltage of 20 Vm. The peak load 118) voltage for the circuit is ________ if the diode drop is included. A) 9.3 Vp B) 20 Vp C) 10 Vp D) 19.3 Vp 119) In an n-type material, the majority carriers are ________. 119) A) valence-band holes B) valence-band electron C) conduction-band holes D) conduction-band electrons 120) An npn transitor is biased using collector feedback. Rc = 2.2 kΩ and RB = 220 kΩ. Vcc = 25 V and β 120) = 250. Solve for the value of base current. A) 31.6 μA B) 7.9 mA C) 214 μA D) 3.16 μA 121) A BJT has measured dc current values of IB = 1 mA and IC = 80 mA. When IB is varied by 100 μA, 121) IC changes by 10 mA. What is the value of β dc for the device? A) 80 B) 100 C) 800 D) 10 122) To design a transistor circuit for maximum stability, one must consider ________. 122) A) the transistor's beta stability factor B) the collector leakage current stability factor C) the base-emitter junction voltage stability factor D) All of the above 16 123) For this circuit, determine the load-line intersection with the two axis. 123) A) VD = 1 V and ID = l mA B) VD = 10 V and ID = l0 mA C) VD = 10 V and ID = l mA D) VD = 1 V and ID = l0 mA 124) If a zener diode is connected to the base of a transistor, chances are it is a ________. 124) A) beta-stabilized circuit B) current mirror C) constant-current source D) gain-stabilized amplifier 125) Calculate the maximum collector current for this circuit. 125) A) 0.904 mA B) 0.056 mA C) 6.0 mA D) 0.96 mA 126) The ideal diode symbol has an arrow that points in the direction of ________. 126) A) the leakage current flow B) the forward current flow C) positive terminal under forward bias D) All of the above 127) For this clipping circuit, what is the minimum output voltage when the diode is conducting? 127) A) + 16.97 V B) - 1.0 V C) - 17.97 V D) - 16.97 V 128) The Zener diode is on if the applied voltage, V, is ________. 128) A) V < VZ / 2 B) V ≥ VZ C) V > 2VZ D) V < VZ 17 129) When a transistor is in saturation, the total collector current is limited by ________. 129) A) collector supply, collector-to-emitter voltage, and the total collector circuit resistance B) collector-to-emitter and collector supply voltage C) the transistor D) collector supply voltage and the total resistance in the collector and emitter circuits 130) The diode electrode with n-type material is called the ________. 130) A) Zener region B) anode C) depletion region D) cathode 131) The term quiescent means ________. 131) A) active B) inactive C) at rest D) midpoint-biased 132) The change in β and VCE that can occur when the temperature changes is known as ________. 132) A) Q-point movement B) midpoint bias C) midpoint movement D) output movement 133) Variation in h fe is influenced by ________. 133) A) bias type and device size B) junction temperature and collector current C) temperature and base current D) device size and base current 134) Calculate the base current for this emitter-stabilized bias circuit. 134) A) 89.1 μA B) 89.0 mA C) 0.119 mA D) None of the above 135) A given BJT has an alpha of 0.9985 and a collector current of 15 mA. What is the value of base 135) current? A) 15 mA B) 14.85 mA C) 15.15 mA D) None of the above 18 136) Which bias circuit is found chiefly in integrated circuit applications? 136) A) voltage divider bias B) collector feedback bias C) emitter bias D) base bias 137) When a BJT is biased in the saturation region, its base-emitter junction is ________-biased and its 137) collector-base junction is ________-biased. A) forward; reverse B) reverse; forward C) forward; forward D) reverse; reverse 138) A bridge rectifier has values of Vm = 177 V, turns ratio = 5 : 1, and RL = 500 Ω. What is the dc 138) output voltage? A) 9.91 V B) 21.62 V C) 6.88 V D) 3.75 V 139) Which term does not define ac resistance? 139) A) Dynamic resistance B) Reactance C) Small signal resistance D) Bulk resistance 140) Electron Theory suggests that: 140) A) Current flow is not a component of electron movement B) Electrons move from a positive toward a negative voltage C) Electrons actually move from a negative toward a positive voltage D) Electrons and protons are responsible for current flow 19 Answer Key Testname: BASIC ELECTRONICS 2016_IDLENDSEM 1) A 2) C 3) C 4) B 5) D 6) D 7) D 8) A 9) D 10) A 11) B 12) A 13) B 14) B 15) D 16) A 17) D 18) D 19) D 20) D 21) D 22) C 23) B 24) D 25) B 26) D 27) C 28) D 29) C 30) D 31) A 32) A 33) A 34) B 35) A 36) A 37) D 38) C 39) B 40) B 41) B 42) A 43) B 44) D 45) A 46) B 47) C 48) B 49) C 50) D 20 Answer Key Testname: BASIC ELECTRONICS 2016_IDLENDSEM 51) C 52) B 53) D 54) C 55) B 56) A 57) C 58) A 59) D 60) A 61) A 62) C 63) A 64) A 65) B 66) D 67) D 68) B 69) A 70) A 71) A 72) B 73) B 74) C 75) B 76) C 77) B 78) C 79) D 80) B 81) D 82) A 83) B 84) D 85) A 86) C 87) C 88) C 89) A 90) D 91) D 92) D 93) B 94) A 95) C 96) D 97) B 98) D 99) C 100) C 21 Answer Key Testname: BASIC ELECTRONICS 2016_IDLENDSEM 101) B 102) D 103) C 104) D 105) B 106) A 107) B 108) A 109) A 110) D 111) D 112) D 113) A 114) D 115) A 116) C 117) D 118) A 119) D 120) A 121) A 122) D 123) B 124) C 125) C 126) B 127) B 128) B 129) D 130) D 131) B 132) A 133) B 134) A 135) D 136) C 137) C 138) B 139) B 140) C 22