12 Questions
What are the criteria for a unit to be classified as No Trouble Found (NTF) upon return?
The units passed Automatic Test Equipment (ATE) testing, the units passed bench testing with the customer application conditions, and the units passed the requirements based on the specifications.
How is Electrical Overstress (EOS) generally defined?
Electrical overstress can be defined as any condition where one or more pins on an IC are subjected to current and/or voltage levels that exceed the Absolute Maximum Ratings per the IC data sheet.
What are the potential outcomes of an Electrical Overstress (EOS) event on an IC?
The outcomes can range from no damage or degradation to the IC up to catastrophic damage where the IC is permanently non-functional.
What are some possible sources of Electrical Overstress (EOS)?
Possible sources include overvoltage, overcurrent, transient overvoltage (voltage spike), short circuit, loose connection, and ground fault.
What does overvoltage refer to in the context of Electrical Overstress (EOS)?
Overvoltage means the application of voltage above the absolute maximum specification, leading to potential damage.
How can overcurrent contribute to Electrical Overstress (EOS)?
Overcurrent in EOS can be caused by factors like short circuit, loose connection, and ground fault, leading to potential damage.
What is hot switching in the context of devices?
Changing the state of the switch while the device is powered on.
What are common attributes of Electrical Overstress (EOS) damage?
Discolored/burnt package, Melted/Severed Wire, Carbonized plastic encapsulant, Reflowed/burnt metallization.
What causes Electrostatic Discharge (ESD)?
Single, fast, high current transfer of static charge due to direct contact between objects at different potentials or high electrostatic field between objects in close proximity.
Name three ESD models used to simulate real-life ESD damage to ICs.
Human Body Model (HBM), Charged Device Model (CDM), Field-Induced Charged Device Model (FICDM or RCDM).
What is one of the criteria that should be met to conclude that units failed due to insufficient test coverage?
Refer to the table below for the summary of ESD failure mechanism.
What is the risk associated with wrong power supply sequencing?
Risk of damage to the device due to incorrect power supply order.
Learn about common failure mechanisms in IC packaging and FA such as No Trouble Found (NTF), Electrical Overstress (EOS), and Electrostatic Discharge (ESD). Explore topics like test coverage and test programs for identifying failure mechanisms.
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