BRUTE® Hydrazine for Atomic Layer Deposition (ALD)

BRUTE® Hydrazine Gas Delivery

• The system delivers anhydrous hydrazine gas for atomic layer deposition (ALD)
• It uses a vaporizer to turn hydrazine liquid into gas for the process

Atomic Layer Deposition (ALD)

• ALD is a precise method for thin-film deposition
• It adds materials one atomic layer at a time
• It's a type of chemical vapor deposition (CVD)
• It uses self-limiting chemical reactions
• This ensures even material layers with the correct thickness, even on complex surfaces

High-Aspect-Ratio

• High-aspect-ratio refers to structures with a significantly greater height or depth compared to their width

Chemical Vapor Deposition (CVD)

• CVD deposits thin films of materials onto a substrate
• A chemical reaction of gaseous precursors occurs at the substrate surface, forming a solid material that adheres to the substrate

Why BRUTE® Hydrazine?

• It operates at lower temperatures, between 200°C to 400°C
• It is more reactive than ammonia, which helps create uniform films at low temperatures
• It is very pure with almost no water, preventing impurities in films
• It is safer to use, with lower flammability and toxicity compared to other chemicals
• It is versatile and used for creating metal nitride films, cleaning metals, and in processes like SiGe passivation

How it Works

• The BRUTE® Hydrazine vaporizer heats liquid hydrazine, turning it into gas
• The gas is then used in processes requiring precise thin-film applications

Advantages

• It works better in high-precision applications like gate stacks, etching, and double patterning in semiconductor manufacturing
• It is more stable and safer than ammonia and plasmas

Gate Stacks

• Gate stacks refer to the layers of materials built up on a transistor's gate
• They control the flow of electricity in a circuit

Etching

• Etching selectively removes material from the surface of a silicon wafer or thin film
• It creates patterns and structures required for integrated circuits (ICs)
• It is a critical step in semiconductor manufacturing

Double Patterning

• Double patterning is a technique used to create smaller and more detailed features on semiconductor wafers
• It involves two patterning steps to print finer patterns on the chip

Product Info

• It is available in different sizes (250ml or 1000ml)
• The vaporizer ensures the hydrazine is delivered at the correct flow rate

Hydrogen Peroxide Gas for Thin Film Processing

• The BRUTE® Peroxide 2 Series delivers hydrogen peroxide (H₂O₂) gas to improve processes like Atomic Layer Deposition (ALD) and Area Selective Deposition (ASD)
• It helps with surface cleaning, hydroxylation, and oxidation while reducing the need for high temperatures
• It allows for more options in the chemicals used during these processes

Area Selective Deposition (ASD)

• ASD selectively deposits materials only on specific areas of a surface
• It's useful in semiconductor manufacturing and allows for precise control over where the deposition happens

Benefits

• It delivers stable hydrogen peroxide gas with minimal water
• It does not produce harmful liquid droplets that can cause uneven results
• It is more effective than older methods using oxygen, plasma, or ozone
• It helps improve surface treatment, especially for complex 3D structures
• It enables faster reactions and works at lower temperatures
• It can be used safely with metal surfaces and avoids damage compared to ozone or plasma
• It does not require extra heating to break down the peroxide

How It Works

• The BRUTE® Peroxide 2 Series uses a solid sorbent to store and deliver H₂O₂ gas, ensuring higher purity and consistent performance
• Traditional peroxide solutions mix with too much water, making the hydrogen peroxide gas much less concentrated
• The BRUTE® version provides a controlled, higher concentration of H₂O₂ gas

Why It’s Better

• Hydrogen peroxide is a more effective oxidizer than water, ozone, or plasma, with 10x the hydroxyl density of water
• It’s more reactive and precise, leading to better control of the oxidation process
• It can be used in vacuum and low-pressure systems, unlike liquid peroxide solutions

More Details

• It works in a temperature range of 15-40°C and a pressure range of 0-1520 torr
• It requires a carrier gas flow rate between 0-2000 sccm
• It has a shelf life of 12 weeks at 25°C or 12 months at lower temperatures

RASIRC Peroxidizer

• The RASIRC Peroxidizer is a system that delivers high-concentration hydrogen peroxide (H₂O₂) gas safely and reliably
• It is for processes like Atomic Layer Deposition (ALD), annealing, and surface cleaning

Annealing

• Annealing is a heat treatment process used to alter the properties of a material by heating it to a specific temperature and then allowing it to cool slowly

Key Benefits

• It concentrates standard 30% hydrogen peroxide (semiconductor-grade) for more effective use
• It delivers clean, high-quality H₂O₂ gas without droplets or breakdowns into water and oxygen
• It keeps the water content low, which is important for maintaining the effectiveness of the process

Benefits for Specific Processes

• For ALD and Annealing; it works at lower temperatures, helps grow oxides faster and reacts well with metal-organic materials
• Also cleans surfaces in place and creates smoother, more uniform surfaces, reducing defects
• For Surface Cleaning; it provides stable delivery of H₂O₂ gas for film and residue removal and works like a cleaning agent that requires less chemical use than traditional wet cleaning
• It effectively removes organic materials (like carbon) and metals without damaging the surface

Common Problems with Hydrogen Peroxide Gas

• Regular hydrogen peroxide solution tends to break into water and hydrogen peroxide at different rates, making it hard to control the concentration
• If not delivered carefully, hydrogen peroxide can form droplets that might cause issues on wafer surfaces
• When the temperature is too high, hydrogen peroxide breaks down into water and oxygen, which reduces its effectiveness

How the RASIRC Peroxidizer Solves These Issues

• It uses a special method to concentrate the hydrogen peroxide solution, allowing it to deliver up to 50,000 ppm of H₂O₂ gas, with much less water
• This method overcomes the issues where traditional systems fail, ensuring a stable and consistent gas flow that’s easier to control for precise processes