MOSFET Switching Characteristics

A ______ type of FET has a positive or negative value of Gate to Source voltage (VGS)

Typically, JFETs can only have ______ values for Gate to Source voltage (VGS)

Complementary ______ is made up of two MOSFETs, one p-channel and one n-channel, in a single substrate

Metal ______ FET (MESFET) is more recently developed than MOSFET and junction FET

______ Arsenide (GaAs) MESFET uses GaAs instead of Silicon as the substrate

The drain current is zero for levels of gate to source voltage less than the ______ level VGSth

FETs are ______ devices which could be used in applications wherein bipolar junction transistors are used.

FET is a ______ controlled device, whereas BJT is a current controlled device.

FETs are classified as ______ devices because current flow is only dependent on either electron flow or hole flow.

FETs have a very high ______ impedance compared to BJTs.

The gate of a Junction Field Effect Transistor (JFET) is ______ biased.

FETs could also be classified as ______ and IGFET (Insulated Gate Field Effect Transistor).

MOSFET is also known as ______ Gate FET or ______.

Unlike JFET, ______ MOSFET is able to operate with positive and negative values of VGS.

Silicon dioxide is used as an ______ material in MOSFET.

When VGS is equal to Vp (VGS (off)), ID is equal to ______ A.

The region for positive VGS is called ______ region.

Enhancement Type MOSFET is ______ by Shockley's equation.