Introduction to Integrated Circuit Fabrication
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Questions and Answers

What is the main purpose of using gettering in semiconductor manufacturing?

  • To increase the size of silicon wafers
  • To improve the thermal properties of the substrate
  • To enhance the electrical conductivity of silicon
  • To remove or deactivate undesired impurities (correct)
  • Which step in silicon purification involves treating metallurgical grade silicon with HCl?

  • Formation of chlorosilanes (correct)
  • Melt above 1600 °C
  • Grinding metallurgical grade silicon
  • Silicon deposition on filament
  • What type of environment is critical for minimizing contaminations during semiconductor processing?

  • A cold environment to prevent oxidation
  • A clean room with controlled temperature and humidity (correct)
  • A vacuum environment with no air circulation
  • An open environment with high humidity
  • What is the native oxide thickness in the RCA cleaning process?

    <p>17 Å (B)</p> Signup and view all the answers

    What is a critical temperature threshold for the melting of silicon in its purification process?

    <p>1600 °C (C)</p> Signup and view all the answers

    What is the primary function of HEPA filters in a clean room?

    <p>To filter out high-efficiency particles (D)</p> Signup and view all the answers

    In the purification process, what follows the production of chlorosilanes?

    <p>Silicon deposition on a filament (A)</p> Signup and view all the answers

    Which component is an essential part of the Czochralsky technique in crystal development?

    <p>Controlled crystal pulling rate (C)</p> Signup and view all the answers

    What is the significance of a glossy floor in a clean room?

    <p>To facilitate easy cleaning and maintenance (B)</p> Signup and view all the answers

    What is the final purity level of silicon achieved through the purification process described?

    <p>99.9999% (B)</p> Signup and view all the answers

    Signup and view all the answers

    Study Notes

    Introduction to Integrated Circuit Fabrication

    • Integrated circuits (ICs) are complex electronic circuits fabricated on a single semiconductor substrate (typically silicon).
    • Fabrication involves multiple steps including wafer production, purification, crystal growth, and device processing.

    Silicon Crystal Structure

    • Silicon crystals are characterized by a repeating unit cell in the x, y, and z directions.
    • Silicon's basic structure is a diamond crystal structure
    • Crystal planes and directions are defined using a coordinate system.
    • Planes are identified by Miller indices.

    Silicon Purification

    • Silicon is purified from raw materials (like sand) using methods like the Siemens technique.
    • Chlorosilanes (volatile compounds) are generated and subsequently treated to achieve high purity.
    • Purification yields very high purity silicon (99.9999%).

    Crystal Growth Techniques: Czochralski

    • This technique is used to grow single-crystal silicon ingots.
    • A seed crystal is dipped into a molten silicon pool and slowly withdrawn.
    • Important control parameters include pull rate, melt temperature, and rotation rate.

    Crystal Growth Techniques: Float Zone

    • An alternative method for refining or growing single crystals.
    • The process involves heating a rod of polysilicon in a high-frequency electromagnetic field, causing it to melt and reform.

    Properties of Silicon Wafers

    • Wafers are sliced from the ingot.
    • Wafers are typically polished on one side.
    • The initial wafers contain trace amounts of impurities and dopants (O, C, and others)

    Dopant Incorporation and Crystal Defects

    • Dopants are incorporated during crystal growth, but spatial variation can arise.
    • Defects (point, line, and volume) exist in the crystal and usually reduce device performance.

    Contamination Control

    • Contamination control is critical for integrated circuit fabrication.
    • This involves using 'clean rooms' with high air quality and other measures.
    • RCA cleaning, a standard process, is used to remove organic, metal and alkali ions from wafers.
    • Ultrasonication is used to mechanically remove contaminants.

    Gettering

    • Gettering is used to remove metal and alkali ions from device active regions (important for device performance).
    • Gettering utilizes 'trap' sites in the wafer.
    • There are intrinsic and extrinsic gettering methods.
    • Heavy metals diffuse rapidly within silicon.

    Moore's Law

    • Moore's Law describes the observation that the number of transistors on integrated circuits doubles approximately every two years.
    • This trend has driven significant advancements in computing technology.

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    Description

    This quiz covers the fundamental concepts of integrated circuit fabrication, including wafer production, silicon crystal structure, purification processes, and crystal growth techniques such as the Czochralski method. Test your knowledge of these essential topics in semiconductor technology.

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