Electronics Chapter on Rectifiers and Transistors

True (A)

The bridge rectifier eliminates the need for a center-tapped transformer, making it smaller and less expensive.

<p>D1 and D3</p> Signup and view all the answers

<p>Half-wave rectifier = Uses a single diode to transfer only one half cycle of the input waveform. Full-wave rectifier = Utilizes both half cycles of the input waveform to produce a continuous output. Bridge rectifier = Utilizes four diodes in a closed loop configuration to produce the desired output. Center-tapped transformer rectifier = Uses a transformer with a center tap and two diodes, one for each half cycle.</p> Signup and view all the answers

<p>To provide a path for the current to flow. (C)</p> Signup and view all the answers

<p>False (B)</p> Signup and view all the answers

<p>A full-wave rectifier produces a more continuous output with less ripple compared to a half-wave rectifier.</p> Signup and view all the answers

<p>Emitter and Collector</p> Signup and view all the answers

<p>False (B)</p> Signup and view all the answers

<p>bipolar</p> Signup and view all the answers

<p>Emitter = Emits charge carriers Base = Controls the flow of charge carriers Collector = Collects charge carriers</p> Signup and view all the answers

<p>To control the flow of charge carriers (B)</p> Signup and view all the answers

<p>False (B)</p> Signup and view all the answers

<p>Lightly doping the base region minimizes recombination of charge carriers, allowing a greater proportion of electrons to reach the collector, resulting in a higher collector current.</p> Signup and view all the answers

<p>Emitter-Base junction is forward-biased, Collector-Base junction is reverse-biased (B)</p> Signup and view all the answers

<p>The Hall voltage is directly proportional to the magnetic field, the current, and inversely proportional to the carrier concentration: VH = B * I / (n * q * t), where q is the charge of the carrier and t is the thickness of the sample.</p> Signup and view all the answers

<p>False (B)</p> Signup and view all the answers

<p>m^3/C</p> Signup and view all the answers

<p>The electric field (A)</p> Signup and view all the answers

<p>Hall mobility (μH) is a measure of how easily charge carriers move in a material under the influence of an electric field and magnetic field. It is calculated as the product of the Hall coefficient (RH) and the conductivity (σ), which is the reciprocal of resistivity (ρ). μH = RH * σ = RH / ρ.</p> Signup and view all the answers

<p>Hall Voltage = Volts (V) Magnetic Field = Tesla (T) Current = Amperes (A) Carrier concentration = m^-3 Hall coefficient = m^3/C Resistivity = Ohm-meter (Ω·m) Mobility = m^2/V·s</p> Signup and view all the answers

<p>The Hall angle (θH) is related to the material's resistivity (ρ) and Hall coefficient (RH) by the equation: tan(θH) = RH * B * σ = RH * B / ρ, where B is the magnetic field.</p> Signup and view all the answers

<p>False (B)</p> Signup and view all the answers

<p>α</p> Signup and view all the answers

<p>True (A)</p> Signup and view all the answers

<p>α is approximately equal to 1.</p> Signup and view all the answers

<p>2880 A/m²</p> Signup and view all the answers

<p>The current gain (α or β) being close to 1. (C)</p> Signup and view all the answers

<p>Hall</p> Signup and view all the answers

<p>∆Ie = Change in emitter current ∆Ic = Change in collector current α = Current gain β = Current gain in terms of collector current and base current VH = Hall voltage</p> Signup and view all the answers

<p>m³/C (C)</p> Signup and view all the answers

<p>True (A)</p> Signup and view all the answers

<p>β = α / (1 - α)</p> Signup and view all the answers

<p>1.83 mV</p> Signup and view all the answers

<p>Hall coefficient (RH) = m³/C Magnetic field (B) = Wb/m² Current (I) = A Thickness (t) = m Hall voltage (VH) = V</p> Signup and view all the answers

<p>electric</p> Signup and view all the answers

<p>3.6 × 10⁻⁴ m³/C</p> Signup and view all the answers

<p>True (A)</p> Signup and view all the answers

<p>To provide a large surface area for the emitter to inject carriers. (D)</p> Signup and view all the answers

<p>base</p> Signup and view all the answers

<p>The emitter is heavily doped to provide a large number of majority carriers, which are then injected into the base region, resulting in a large emitter current.</p> Signup and view all the answers

<p>In a common base configuration, the base terminal is common to both the input and output circuits, while in a common emitter configuration, the emitter terminal is common to both the input and output circuits.</p> Signup and view all the answers

<p>Emitter = Injects charge carriers into the base. Base = Controls the flow of charge carriers from emitter to collector. Collector = Collects charge carriers from the base.</p> Signup and view all the answers

<p>High recombination rate in the base (C)</p> Signup and view all the answers

<p>The base region acts as a control element, regulating the flow of charge carriers from the emitter to the collector.</p> Signup and view all the answers

The phase in AC where diode D1 is forward biased and conducts current.

The phase in AC where diode D2 is forward biased and conducts current.

The voltage developed across the load resistor RL during both half cycles.

A circuit that utilizes both half cycles of AC to produce output voltage.

A configuration using four diodes to convert AC to DC without a center-tapped transformer.

Two diodes conducting in series during each half cycle in a bridge rectifier.

The component where output voltage is developed in both half cycles of the rectifier.

A diode that does not conduct current during a specific half cycle.

The narrow and lightly doped region that controls charge carrier flow from emitter to collector.

The emitter is heavily doped to inject a large number of charge carriers into the base.

The collector region is larger to collect charge carriers and dissipate heat generated.

The base is designed to minimize base current while allowing quick carrier diffusion.

Recombination occurs when charge carriers combine, reducing overall current flow.

A transistor configuration where the base terminal is common to input and output circuits.

A transistor configuration where the emitter terminal is common to input and output circuits.

The collector's main role is to collect charge carriers from the base and dissipate heat.

A semiconductor device that can amplify or switch electronic signals.

A type of transistor with P-type material sandwiched between two N-type materials.

A type of transistor with N-type material sandwiched between two P-type materials.

Region in a transistor that emits charge carriers and is heavily doped.

The central region of a transistor that controls the flow of charge carriers.

The region in a transistor that collects charge carriers coming from the base.

The process of applying voltage across the transistor to control its operation.

An area in the transistor where no charge carriers are present, formed by diffusion.

The change in the emitter current due to a variation in the emitter-base voltage.

The change in collector current resulting from a change in emitter current.

The voltage decrease caused by the change in collector current.

The relationship shows how current changes relate to transistor parameters α (alpha) and β (beta).

The common base current gain, approximately equal to 1 in many transistors.

The phenomenon where a potential difference is created in a conductor carrying current in a magnetic field.

A magnetic field oriented perpendicular to the direction of current flow.

The electric potential created due to the Hall Effect in a conductor.

A measure of the Hall voltage per unit of magnetic field and current density.

The number of charge carriers per unit volume in a material.

The average velocity of charge carriers in a conducting medium due to an electric field.

A material's ability to resist the flow of electric current, expressed in ohm-meters.

The ability of charge carriers to move through a material under the influence of an electric field.

The potential difference across a conductor when a magnetic field is applied perpendicular to the current.

The measure of the strength and the direction of a magnetic field, expressed in teslas.

The angle formed between the direction of the magnetic field and the current due to the Hall effect.

A measure of how a semiconductor generates Hall voltage in a magnetic field, calculated in m³/C.

The amount of current flowing per unit area in a material, measured in A/m².

The average velocity of charge carriers under an electric field, measured in m/s.

The strength of the magnetic field applied to a semiconductor, measured in Wb/m².

Materials with conductivity between conductors and insulators used in electronic components.