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Questions and Answers
Which of the following is NOT a type of source material used in CVD?
Which of the following is NOT a type of source material used in CVD?
High process temperatures are an advantage of CVD.
High process temperatures are an advantage of CVD.
False
What factor is considered when choosing substrates for CVD?
What factor is considered when choosing substrates for CVD?
Adsorption and surface reactions
The preferred reaction temperature in CVD should be lower than the ________ of the substrate.
The preferred reaction temperature in CVD should be lower than the ________ of the substrate.
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What does the variable F represent in the equations provided?
What does the variable F represent in the equations provided?
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Match the following components with their respective functions:
Match the following components with their respective functions:
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In steady state, F equals F1 and F2.
In steady state, F equals F1 and F2.
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What does the symbol N represent in the equations?
What does the symbol N represent in the equations?
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The growth rate of the film is determined using the equation v = F / __________.
The growth rate of the film is determined using the equation v = F / __________.
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Match the following variables with their corresponding meanings:
Match the following variables with their corresponding meanings:
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What is the first step in the CVD process?
What is the first step in the CVD process?
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CVD processes are generally slower than physical vapor deposition (PVD).
CVD processes are generally slower than physical vapor deposition (PVD).
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Name one advantage of using Chemical Vapor Deposition (CVD).
Name one advantage of using Chemical Vapor Deposition (CVD).
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CVD is also known as __________ when referring to the growth of epitaxial films.
CVD is also known as __________ when referring to the growth of epitaxial films.
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Which step is most important for the growth rate in the CVD process?
Which step is most important for the growth rate in the CVD process?
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Match the following steps of the CVD process with their descriptions:
Match the following steps of the CVD process with their descriptions:
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MOCVD is also referred to as OMVPE.
MOCVD is also referred to as OMVPE.
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What limits the reaction rate during the CVD process?
What limits the reaction rate during the CVD process?
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Study Notes
Chemical Vapor Deposition
- CVD is a thin film deposition method where chemical reactions occur on a substrate surface.
- The process involves introducing reactive gases into a chamber where the gases are activated by heat or plasma.
- Gases adsorb on the substrate surface, reacting to form a film.
- Volatile byproducts are transported away from the substrate and exhausted.
CVD Process Steps
- Step 1: Transport of reactants to the deposition region.
- Step 2: Transport of reactants from the main gas stream through the boundary layer to the wafer surface.
- Step 3: Adsorption of reactants on the wafer surface.
- Step 4: Surface reactions, including chemical decomposition or reactions, surface migration to attachment sites (kinks and ledges); site incorporation; and emission and redeposition.
- Step 5: Desorption of byproducts.
- Step 6: Transport of byproducts through the boundary layer.
- Step 7: Transport of byproducts away from the deposition region.
- Steps 2-5 are crucial for determining the growth rate.
- Steps 3-5 are closely related and can be grouped together as "surface reaction" processes.
CVD Advantages and Disadvantages
- CVD offers high growth rates and good reproducibility.
- It can deposit materials that are difficult to evaporate.
- CVD can grow epitaxial films, which are also known as "vapor phase epitaxy (VPE)."
- Metal-Organic CVD (MOCVD) is also referred to as Organo-Metallic VPE (OMVPE).
- CVD generally produces higher film quality and more conformal step coverage compared to physical vapor deposition.
- Disadvantages include high process temperatures, complex processes, toxic and corrosive gases, and potential film impurities (e.g., hydrogen incorporation).
CVD Sources and Substrates
- CVD sources can be gases, volatile liquids, sublimable solids, or combinations.
- Source materials should be stable at room temperature, sufficiently volatile, have high enough partial pressure for good growth rates, have a reaction temperature below the substrate's melting point, produce the desired element on the substrate with easily removable by-products, and have low toxicity.
- Substrates should be chosen considering their adsorption and surface reaction properties.
- For example, WF6 deposits on Si but not on SiO2.
Film Growth Rate Derivation
- Film growth rate is derived using a model similar to the Deal-Grove model for thermal oxidation.
- The growth rate is influenced by the diffusion flux of reactant species and the surface reaction flux.
- The growth rate equation is derived by equating the diffusion flux and the surface reaction flux in steady state.
- The growth rate equation is dependent on the mass transfer coefficient, surface reaction rate, concentration of reactant in the gas phase, and the mole fraction of the incorporating species.
Factors Affecting Film Growth Rate
- The growth rate can be controlled by adjusting the gas transport to and from the surface, the surface chemical reaction rate, the surface temperature, and the partial pressure of the reactant.
- When the surface reaction rate is much faster than the diffusion rate, the growth is primarily limited by diffusion.
- When the diffusion rate is much faster than the surface reaction rate, the growth is primarily limited by the surface reaction.
- When the diffusion and surface reaction rates are comparable then both are important for the film growth.
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Description
Test your understanding of the Chemical Vapor Deposition (CVD) process, a crucial thin film deposition method. This quiz covers key steps involved in the CVD process, including reactant transport, adsorption, and surface reactions. Assess your knowledge and learn more about how films are formed through chemical reactions.