Oxidation: Semiconductor Technology PDF

At the heart of every microchip, a controlled transformation: Oxidation, the cornerstone of semiconductor technology. page 01 The process of oxidation develops an oxide layer that provides insulation inside semiconductor devices. The insulating layer of oxide protects...

At the heart of every microchip, a controlled transformation: Oxidation, the cornerstone of semiconductor technology. page 01 The process of oxidation develops an oxide layer that provides insulation inside semiconductor devices. The insulating layer of oxide protects the wafer and prevents unwanted connections inside the device. page 02 https://www.youtube.com/watch?v=Bu52CE55BN0  The oxidation process is one of the most important thermal processes in case of semiconductor chip manufacturing. Silicon reacts with oxygen very quickly, and forms silicon dioxide on the silicon surface. The reaction can be expressed as Si + O2 → SiO2 page 03 https://www.youtube.com/watch?v=2IjwSUbYl6 o  The dielectric property of the oxide layer (such as silicon dioxide) provides insulation for the gate terminal in MOSFET. The main function of the gate terminal is its insulation which allows a transistor to operate. Proper insulation enables channel creation for drain and source terminals page 04  ‘N’ components are connected inside the semiconductor chip. Closely spaced components can cause leakage current flow and short circuits, leading to the manufacturing of faulty chips. Insulation between components eliminates unwanted electrical connections and maintains the chip functionality. page 05  Preventing leakage current Avoiding short circuits Ensuring proper signal flow page 06  Oxidation offers passivation- protection of semiconductor chips from corrosion and external environmental factors. page 07  Protection from corrosion Improved durability Electrical Insulation page 08 The oxidation process grows thin lms on the chip using thermal oxides, plasma-enhanced chemical vapor deposition (PECVD), electrochemical anodic oxidation, dielectrics (low K and high K), polycrystalline silicon , and metals like Semiconductor circuit design: key chemical procedures copper, aluminum, etc. page 09 The substrate is exposed to oxide at a temperature range from 700-1200 degrees Celsius and atmospheric pressure of 1 atm in a controlled environment. page 09 page 10  Dry oxidation: The substrate is exposed to oxygen at higher temperatures in a controlled environment to grow a thick oxide lm of higher breakdown voltage. Dry oxidation is followed twice in the sequence. page 11  Just as the name suggests, wet oxidation exposes the substrate to a mixture of oxygen and water vapor at slightly lower temperatures. The presence of H2O molecules grows oxide lm at a higher rate. page 12 https://www.youtube.com/watch?v=2IjwSUbYl6 o page 10