NDP603AL Datasheet PDF

THE DATASHEET OF NDP603AL win-source.net 0086-755-83957316  January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field E...

THE DATASHEET OF NDP603AL win-source.net 0086-755-83957316  January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This Critical DC electrical parameters specified at elevated very high density process is especially tailored to temperature. minimize on-state resistance. These devices are Rugged internal source-drain diode can eliminate the need particularly suited for low voltage applications such as for an external Zener diode transient suppressor. DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and High density cell design for extremely low RDS(ON). resistance to transients are needed. 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP603AL NDB603AL Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous ± 20 V ID Drain Current - Continuous 25 (Note 1) A - Pulsed 100 PD Total Power Dissipation @ TC = 25°C 50 W Derate above 25°C 0.4 W/°C TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C TL Maximum lead temperature for soldering purposes, 275 °C 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W © 1997 Fairchild Semiconductor Corporation NDP603AL.SAM  Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS Single Pulse Drain-Source Avalanche VDD = 15 V, ID = 25 A 100 mJ Energy IAR Maximum Drain-Source Avalanche Current 25 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.1 1.5 3 V o TJ = 125 C 0.7 1.1 2.2 VDS = VGS, ID = 10 mA 1.4 1.85 3 o TJ = 125 C 1 1.5 2.2 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A 0.019 0.022 Ω TJ = 125oC 0.028 0.045 VGS = 4.5 V, ID = 10 A 0.031 0.04 ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A VGS = 4.5 V, VDS = 10 V 15 gFS Forward Transconductance VDS = 10 V, ID = 25 A 18 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 1100 pF f = 1.0 MHz Coss Output Capacitance 540 pF Crss Reverse Transfer Capacitance 175 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = 15 V, ID = 25 A, 15 30 ns tr Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 70 110 ns tD(off) Turn - Off Delay Time 90 150 ns tf Turn - Off Fall Time 80 130 ns Qg Total Gate Charge VDS = 10 V, 28 40 nC ID = 25 A, VGS = 10 V Qgs Gate-Source Charge 5 7 nC Qgd Gate-Drain Charge 7 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) 1.3 V Note: 1. Maximum DC current limited by the package. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDP603AL.SAM Typical Electrical Characteristics 80 3 VGS =10V 8.0 7.0 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) VGS = 4V 6.0 2.5 60 4.5 RDS(on) , NORMALIZED 5.0 2 5.0 40 6.0 4.5 1.5 7.0 8.0 4.0 20 10 1 3.0 0 0.5 0 1 2 3 4 5 0 20 40 60 80 V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 2.5 I D = 25A V GS = 10V DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.4 VGS =10V 2 RDS(ON), NORMALIZED R DS(on) , NORMALIZED 1.2 TJ = 125°C 1.5 1 25°C 1 0.8 -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 TJ , JUNCTION TEMPERATURE (°C) I D , DRAIN CURRENT (A) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain with Temperature. Current and Temperature. 40 0.05 V DS = 1 0 V TJ = -55°C V DS = 1 0 V 25 125 0.04 30 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) TJ = 125°C 25°C -55°C 0.03 20 0.02 10 0.01 0 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 V GS , GATE TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Drain Current Variation with Gate Figure 6. Sub-threshold Drain Current Variation Voltage and Temperature. with Gate Voltage and Temperature. NDP603AL.SAM Typical Electrical Characteristics (continued) Vth, GATE-SOURCE THRESHOLD VOLTAGE (V) 2.2 1.12 VDS = VGS DRAIN-SOURCE BREAKDOWN VOLTAGE ID = 250µA 2 1.08 BV DSS , NORMALIZED 1.8 I D = 10mA 1.6 1.04 1mA 1.4 1 1.2 250uA 0.96 1 0.8 0.92 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (°C) TJ , JUNCTION TEMPERATURE (°C) Figure 7. Gate Threshold Variation with Figure 8. Breakdown Voltage Variation with Temperature Temperature. 2500 10 2000 I D = 25A VDS = 5V C iss 10 , GATE-SOURCE VOLTAGE (V) 8 20 1000 CAPACITANCE (pF) C oss 6 500 4 300 200 C rss f = 1 MHz 2 GS V GS = 0 V V 100 0 0.1 0.2 0.5 1 2 5 10 20 30 0 5 10 15 20 25 30 V , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) DS Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t on t off t d(on) tr t d(off) tf V IN RL 90% 90% D V OUT Output, Vout 10% 10% VGS Inverted R GEN DUT 90% G Input, Vin 50% 50% 10% S Pulse Width Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP603AL.SAM  Typical Electrical Characteristics (continued) 25 40 T = -55°C J 20 V GS = 0V , TRANSCONDUCTANCE (SIEMENS) IS , REVERSE DRAIN CURRENT (A) 10 20 5 25°C 2 TJ = 125°C 1 15 25°C 0.5 125°C -55°C 0.2 0.1 10 5 V DS = 10V FS g 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 10 20 30 40 V SD , BODY DIODE FORWARD VOLTAGE (V) I , DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Figure 14. Body Diode Forward Voltage Current and Temperature Variation with Current and Temperature 150 100 1m s 50 it 10 im m )L s I , DRAIN CURRENT (A) 20 ( ON 10 0m R DS s 10 1s DC 5 V GS = 20V 2 SINGLE PULSE D TC = 25°C 1 0.5 0.1 0.5 1 2 5 10 30 50 V DS , DRAIN-SOURCE VOLTAGE(V) Figure 15. Maximum Safe Operating Area 1 D = 0.5 0.5 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.3 0.2 R θJC (t) = r(t) * RθJC 0.2 R = 2.5 °C/W θJC 0.1 0.1 0.05 P(pk) 0.05 0.02 t1 t2 0.03 0.01 Single Pulse TJ - T C = P * R θJC (t) 0.02 Duty Cycle, D = t1 /t2 0.01 0.01 0.1 1 10 100 1000 t1 ,TIME (ms) Figure 16. Transient Thermal Response Curve NDP603AL.SAM