Unit 4 - Electronics PDF

## Unit-4, Correct Ans = option 1 | Sr. No. | Question | Bloom's Texonomy | Answer | Option1 | Option2 | Option3 | Option4 | Answer 4 | |---|---|---|---|---|---|---|---|---| | 1 | Depending upon the ability to conduct electricity materials are classifie in to types | remember | Three | Two | 10 | F...

## Unit-4, Correct Ans = option 1 | Sr. No. | Question | Bloom's Texonomy | Answer | Option1 | Option2 | Option3 | Option4 | Answer 4 | |---|---|---|---|---|---|---|---|---| | 1 | Depending upon the ability to conduct electricity materials are classifie in to types | remember | Three | Two | 10 | Four | One | 4 | | 2 | Forbidden energy gap for Semiconductor is equal to | remember | 1eV | 5eV | Four | 10eV | One | 1 | | 3 | Forbidden energy gap for Insulator is? | remember | Very large | Medium | evaluate | Very small | Overlapping | 3 | | 4 | Forbidden energy gap for Semiconductor is? | remember | 5eV | Very large | 1eV | Very small | Medium | 1 | | 5 | Forbidden energy gap for Insulator is equal to | remember | 5eV | Very large | 1eV | Very small | Medium | 2 | | 6 | P-type semiconductor is form when impurity is added to a pure semiconductor | remember | Trivalent | Pentavalent | Pentavalent | None of given | 1 | | 7 | N-type semiconductor is form when impurity is added to a pure semiconductor | remember | Pentavalent | Pentavalent | Trivalent | None of given | 1 | | 8 | In forward biased PN junction diode, P-type layer connected to terminal and N-type layer connected to terminal of the battery respectively. | remember | Positive and Negative | Negative and Positive | Both | Both Positive | 1 | | 9 | In reverse biased PN junction diode, P-type layer connected to terminal and N-type layer connected to terminal of the battery respectively. | remember | Negative and Positive | Positive and Negative | Both | Negative | 1 | | 10 | In forward biase charachteristic knee voltagr for silicon is approximately | remember | 0.7 V | 0.3 V | 7V | 3 V | 1 | | 11 | In forward biase charachteristic knee voltagr for germanium is approximately | remember | 0.3 V | 0.7 V | 3 V | 7V | 1 | | 12 | In half wave rectifier number of diod is used. | remember | One | Two | Three | Four | 1 | | 13 | In full wave rectifier number of diodes are used. | remember | Two | One | Four | Three | 1 | | 14 | In bridge wave rectifier number of diodes are used. | remember | Four | Three | One | Two | 1 | | 15 | Center tapping transfer is used in type of rectifier. | remember | Full wave | Bridge wave | Half wave | Sine wave | 1 | | 16 | Transistor is layer device. | remember | Three | Two | One | Four | 1 | | 17 | Transistor is terminal device. | remember | Three | One | Two | Four | 1 | | 18 | Transistor is junction device. | remember | Two | Three | Four | One | 1 | | 19 | Diode is a layer device. | remember | Two | Four | Three | One | 1 | | 20 | Diode is a junction device. | remember | One | Four | Three | Two | 1 | | 21 | Diode is a terminal device. | remember | Two | Four | Three | One | 1 | | 22 | In common base configuration terminal is comman to both input and output. | remember | Base | Emitter | Boss | Collector | 1 | | 23 | In common emitter configuration terminal is comman to both input and output. | remember | Emitter | Base | Collector | EMF | 1 | | 24 | In common collector configuration. terminal is comman to both input and output. | remember | Collector | Donor | Cathod | Base | 1 | | 25 | P-type impurity is called impurity. | remember | Acceptor | Neutral | Natural | Emitter | 1 | ## Unit-4, Correct Ans = option-1 | Sr.No. | Question | Bloom's Texonomy | Answer | Option1 | Option2 | Option3 | Option4 | Answer 4 | |---|---|---|---|---|---|---|---|---| | 1 | In which material valence band and conduction band are overlapped? | Remember | Conductor | Insulator | Semiconductor | semiconductor and Insulator | 1 | | 2 | Which group among the following is insulator? | Remember | Paper, glass, cotton | Silver, copper, gold | The human body, wood, iron | Glass, copper, paper | 1 | | 3 | The band gap between the valence band and conduction band is the measure of | Remember | The conductivity of the material | The resistivity of the material | Charge density | Ease of ionization | 1 | | 4 | Which material have low resisitance? | Remember | Conductor | Insulator | Semiconductor | semiconductor and Insulator | 1 | | 5 | The forbidden energy gap is maximum in | Remember | Insulator | Conductor | Semiconductor | Superconductor | 1 | | 6 | Which of the following statement is true regarding intrinsic semiconductor at room temperature? | understand | Number of holes are equal to number of electrons | Number of holes are greater than number of electrons | Number of holes are greater than number of holes | Number of holes are equal to number of electrons | 1 | | 7 | Which of the following statement is true regarding P-type semiconductor at room temperature? | understand | Number of holes are greater than number of electrons | Number of electrons are greater than number of holes | Number of holes are double than number of holes | Number of electrons are greater than number of holes | 1 | | 8 | Which of the following statement is true regarding N- type semiconductor at room temperature? | Evaluate | Number of electrons are greater than number of holes | Number of holes are equal to number of electrons | Number of electrons are greater than number of holes | Number of holes are double than number of electrons | 1 | | 9 | Number of valence electrons in Silicon atom are | understand | 4 | 3 | 2 | 1 | 1 | | 10 | Number of valence electrons in Germanium atom are | Remember | 4 | 7 | 8 | 1 | 1 | | 11 | Which of the following statement is true regarding reverse bias connection of diode? | Remember | Anode is connected to negative terminal of the battery and cathode is connected to the positive terminal of the battery | Anode is connected to positive terminal of the battery and cathode is connected to the negative terminal of the battery | Both anode and cathode are connected to the positive terminal of the battery | Both anode and cathode are connected to the negaitive terminal of the battery | 1 | | 12 | Which of the following statement is true regarding forward bias connection of diode? | Evaluate | Anode is connected to positive terminal of the battery and cathode is connected to the negative terminal of the battery | Anode is connected to negative terminal of the battery and cathode is connected to the positive terminal of the battery | Both anode and cathode are connected to the positive terminal of the battery | Both anode and cathode are connected to the negaitive terminal of the battery | 1 | | 13 | Value of barrier potential for Silicon is | Remember | 0.7 V | 1 V | 0.3 V | OV | 1 | | 14 | Value of barrier potential for Germanium is | Remember | 0.3 V | 0 V | 1 V | 0.7 V | 1 | | 15 | Number of diodes used in half wave rectifier is | Evaluate | 1 | 2 | 4 | 3 | 1 | | 16 | Number of diodes used in bridge rectifier is | Remember | 4 | 1 | 2 | 3 | 1 | | 17 | Function of rectifiern is | Remember | Convert AC into DC | Convert AC into AC | Convert DC into DC | Convert DC into AC | 1 | | 18 | Which of the following statement is true regarding transistor? | Evaluate | It is three terminal device | It is two terminal device | It is four terminal device | None of these | 1 | | 19 | Input characteristic of common emitter configuration is graph of | understand | VBE - IB | VCE-IC | VBC - Ic | None of these | 1 | | 20 | Output characteristic of common emitter configuration is graph of | Remember | VCE - IC | VBE - IB | VBC-IC | None of these | 1 | | 21 | Function of photo cell is | Remember | Convert light energy into electrical energy | Convert electrical energy into light energy | Convert sound wave into electrical energy | Convert electrical energy into sound wave | 1 | | 22 | Function of solar cell is | Remember | Convert sun light into electrical energy | Convert electrical energy into light energy | Convert sound wave into electrical energy | Convert electrical energy into sound wave | 1 | | 23 | Which junction is forward biased when transistor is used as an amplifier? | Evaluate | Emitter-Base | Emitter-Collector | Collector-Base | No junction is forward biased | 1 | | 24 | A low input to the transistor gives | Evaluate | High Output | Low Output | Normal Output | No Output | 1 | | 25 | When the emitter region is common to both input and output circuits, the configuration is called | Remember | Common Emitter | Common Base | Common Collector | Open Circuit | 1 | ## Unit-4 | Sr.No | Question | Option1 | Option2 | Option3 | Option4 | Answer 4 | |---|---|---|---|---|---|---| | 1 | A semiconductor is formed by ......... bonds. | Covalent | Electrovalent | Co-ordinate | None of the above | 1 | | 2 | The most commonly used semiconductor is | Germanium | Silicon | Carbon | Sulphor | 2 | | 3 | A semiconductor has generally ......... valence electrons | 2 | 3 | 4 | None of the above | 3 | | 4 | When a pentavalent impurity is added to a pure semiconductor, it becomes | An insulator | An intrinsic semiconductor | P-type semiconductor | N-type semiconductor | 4 | | 5 | The addition of pentavalent impurity to a semiconductor creates many | Free electrons | Holes | Valence electrons | Bound electrons | 1 | | 6 | A pentavalent impurity has ......... Valence electrons | 3 | 4 | 5 | 6 | 4 | | 7 | The addition of trivalent impurity to a semiconductor creates many | Holes | Free electrons | Valence electrons | Bound electrons | 1 | | 8 | The incomplete part of an electron pair bond | A hole in a semiconductor is defined as | A free electron | A free proton | A free neutron | 2 | | 9 | In a semiconductor, current conduction is due to | Only holes | Only free electrons | Holes and free electrons | None of the above | 3 | | 10 | The battery connections required to forward bias a PN junction are | + Ve terminal to Pand-Ve terminal to N | -Ve terminal to P and +Ve terminal to N | -Ve terminal to P and -Ve terminal to N | None of the above | 1 | | 11 | With a forward bias to a PN junction, the width of the depletion layer | Decreases | Increases | Remains the same | None of the above | 1 | | 12 | Under normal conditions, a diode conducts current when it is........ | Reverse biased | Forward biased | Avalanched | None of the above | 2 | | 13 | The forward voltage drop across a silicon diode is about | 2.5 V | 3 V | 10 V | 0.7 V | 4 | | 14 | A PN diode is used as | An amplifier | A rectifier | An oscillator | Not used in Eletrical circuits | 2 | | 15 | A P-type Semiconductor is | Positively Charged | Negatively Charged | Neutral | All of above | 1 | | 16 | The number of Valance electrons in an atom is less than 4, What is the substance called? | A semiconductor | A conductor | A capacitor | Op-Amp | 1 | | 17 | ......... is an example of semiconductor | Germanium | Copper | Glass | Both a and b | 2 | | 18 | Which one is the example of conductor | Resisitor | Capacitor | Glass | All of above | 1 | | 19 | The most widely used rectifier is ....... | Half-wave rectifier | Centre-tap full-wave rectifier | Bridge full-wave rectifier | None of the above | 1 | | 20 | The Valence Band can be ....... | Completely filled or Partially filled | Completely filled | Completely empty | Only completely filled | 1 | | 21 | The Conduction Band can be ....... | Completely filled | Only completely filled | Have full Valance band. | Only partially filled | 1 | | 22 | The insulators have | Have empty conduction band. | Have full Valance band. | Have large forbidden gap. | All of above | 3 | | 23 | The process of adding an impurity element in a pure semiconductor is known as | Adding | Putting | Doping | Extracting | 3 | | 24 | When a trivalent impurity is added to a pure semiconductor, it becomes | An insulator | An intrinsic semiconductor | P-type semiconductor | N-type semiconductor | 4 | | 25 | A.C. signal is converted into D.C. signal with the help of.. | Rectifier | Oscillator | Amplifier | None of above | 1 | | 26 | Pulsating D.C. is the output of ...... | Rectifier with Filter | Rectifier without Filter | A.C., D.C. | D.C., A.C. | 1 | | 27 | In a filter circuit Capacitor, Block ....... and Pass | A.C., D.C. | D.C., A.C. | All of above | Full wave rectifier | 3 | | 28 | In which Rectifier circuit 2 diodes are on at a time. | Full wave rectifier | Half wave rectifier | Full wave Bridge rectifier | None of the above | 3 | | 29 | In which rectifier circuit the center-tapped transformer is used. | Full wave rectifier | Half wave rectifier | Full wave Bridge rectifier | None of the above | 1 | ## Unit-4 | 30 | In a filter circuit Inductor, Block....... and Pass | A.C., D.C. | D.C., A.C. | All of above | None of above | 1 | |---|---|---|---|---|---| | 31 | Transistor means | Terminal | Transfer | Transmit | None of above | 3 | | 32 | Transistor is ........ Junction and ........ device. | 3,3 | 4,2 | 2,3 | 1,2 | 2 | | 33 | The transistor has ....... | Three PN junctions | Two PN junctions | One PN junction | Four PN junctions | 1 | | 34 | A transistor is a ........ operated device. | Voltage | Current | Both Voltage and Current | None of above | 3 | | 35 | N-type semiconductor is sandwiched between P-type semiconductor then it's known as ....... type transistor. | NPN | PMOS | PNP | NMOS | 1 | | 36 | BJT transistor having 3 layers namely | Emitter, Base, Collector | Source, Gate, Drain | Anode, Gate, Cathode | MT1, MT2, Gate | 1 | | 37 | In NPN transistor, ........ are the minority carriers | Donner Ions | Free Electrons | Acceptor Ions | Holes | 2 | | 38 | The emitter of a transistor is ...... doped. | Heavily | Moderately | Lightly | None of above | 1 | | 39 | In transistor biasing, Emitter-Base junction is kept in ........ biased. | Forward | Reversed | Terminated | None of above | 1 | | 40 | In the symbol of a transistor, the arrow indicates the direction of....... | Electron current in the collector | Hole current in the emitter | Electron current in the emitter | None of above | 3 | | 41 | The collector-base junction in a transistor has ........ biasing | Forward bias at all times | Reverse bias at all times | AC signal bypass | None of the above | 1 | | 42 | In a CE configuration, an emitter resistor is used for | Stabilization | Communication | Common Base | All of above | 1 | | 43 | In ........ configuration the input is given between the emitter and the base and output is taken between the collector and the base. | Common Base | Common Emitter | Common Collector | All of above | 1 | | 44 | The device which converts the low magnitude signal into the higher magnitude signal then it's known as | Oscillator | Rectifier | Multimeter | Amplifier | 4 | | 45 | The most common configuration used for an amplifier is | Common Base | Common Collector | Common Emitter | None of above | 3 | | 46 | Voltage gain is the ratio of | Change in the output voltage to Change in input voltage | Change in the output current to Change in input current | Change in the output voltage to Change in input voltage | Change in the output current to Change in input current | 1 | | 47 | Current gain is the ratio of | Change in the output current to Change in input current | Change in the output voltage to Change in input current | Change in the output current to Change in input current | Change in the output voltage to Change in input current | 2 | | 48 | Power gain is the ratio of | Input power to output power | Output current to input current | Output voltage to input voltage | Output power to input power | 1 | | 49 | The most commonly used semiconductor in the manufacture of a transistor is | Germanium | Silicon | Carbon | Iron | 2 | | 50 | Most of the electrons in the base of an NPN transistor flow | Out of the base lead | Into the collector | Into the emitter | None of above | 2 | | 51 | From the below list which is not an application of transistor. | A.C. to D.C. conversion | In Oscillator | In electronic switch | In digital or analog ICs | 2 | | 52 | Which of the following is the most conductive element? | Copper | Iron | Silver | Silicon | 3 | | 53 | A material that has zero resistance is called | Insulator | Superconductor | Conductor | Frictionless liquid flow | 2 | | 54 | Superconductivity is a material property associated with | a loss of electrical resistance | Cooling a resistance without phase change | Frictionless liquid flow | a loss of thermal resistance | 1 | | 55 | Which among the following is not an insulator? | wool | silver | plastic | paper | 4 | ## | 56 | What is the inverse of resistance called? | Inductance | Conductance | resistance | Permittivity | 2 | |---|---|---|---|---|---| | 57 | With increased in temparature, resistance of metal is | Decreased | Become zero | Not changed | Become zero | 1 | | 58 | The energy gap is maximum in | Conductor | Semiconductor | Superconductor | Insulator | 4 | | 59 | A semiconductor is formed by ......... bonds. | Covalent | electrovalent | coordinate | superconductor | 1 | | 60 | Conductors are materials that allow | Allows cold to flow | Does not Allow the flow of heat | Allow the flow of heat | Stops cold from passing through | 3 | | 61 | Good conductors have many loosely bound | Atoms | electrons | Molecules | None of the Above | 2 | | 62 | The resistance of the conductor is directly proportional to | Area of cross section | Temerature | Length | Resistivity | 3 | | 63 | With increased in temperature, the conductivity of metal is | Decreased | Increased | become zero | Infinity | 1 | | 64 | With increase in temperature, resistivity of semiconductor is | Increased | Become zero | Infinity | Decreased | 4 | | 65 | With increase in temperature, Conductivity of semiconductor is | Increased | Decreased | Infinity | Silky | 1 | | 66 | In which material, the resistance is decreased with increased in temperature? | Zinc | Brass | Carbon | Silver | 4 | | 67 | An n type semiconductor can be obtained by droping the silicon with | Arsenic | Boron | Aluminium | Galium | 1 | | 68 | The donor impurity must have ..... Electrons. | 3 | 4 | 5 | 6 | 1 | | 69 | In n type semiconductors, the majority careers are | Holes | Electrons | neutrons | None of the Above | 2 | | 70 | A semiconductor is a substance which have ....... between conductor and insulator. | Resistivity | Conductivity | Permittivity | None of the Above | 1 | | 71 | What kind of semiconductor is formed when phosphourus is added in silicon | P type | N type | Conductivity | Resistance | 2 | | 72 | N type silicon is obtained by doping the silicon with | P type | Aluminium | Insintric semiconductor | None of the Above | 1 | | 73 | A semiconductor in its purest form is called....... | Insintric semiconductor | Extrinsic semiconductor | Conductor | Super Conductor | 1 | | 74 | A P-type semiconductor results when | A trivalent impurity is added to an intrinsic semiconductor | A pentavalent impurity is added to an intrinsic semiconductor | A trivalent impurity is added to an intrinsic semiconductor | Both a and b | 4 | | 75 | An intrinsic semiconductor at absolute zero......... | Becomes extrinsic semiconductor | Disintegrates into pieces | Behalves like an insulator | None of the Above | 1 | | 76 | A semiconductor has.... temperature co-efficient of resistance. | Zero | Nagetive | Possitive | None of the Above | 3 | | 77 | A doped semiconductor is also known as | Extrinsic semiconductor | Intrinsic semiconductor | Diffused semiconductor | None of the Above | 1 | | 78 | In semiconductor the forbidden energy gap lies | Just below the conduction band | Just above the conduction band | Between the valence band and conduction band | Either above or below the conduction band | 4 | | 79 | Which of the following cannot exist outside a semiconductor | Electrons | Hole | Both and b | None of the above | 2 | | 80 | The forward region of a semiconductor diode characteristic curve is where diode appears as | An on switch | High resistance | An off switch | A capacitor | 1 | ## | 81 | The conduction Band | Is always above the forbidden energy level | Is the region of free electrons | Concentrates holes for the flow of current | Is a range of energies corresponding to the energies of the free electrons | 1 | |---|---|---|---|---|---| | 82 | ........ have a highest mobility. | electrons | Proton | Possitive Iron | Electrons and newtrons | 2 | | 83 | Nucleus is made of | Protons and neutrons | Photons and newtrons | Possitive Iron | Electrons and newtrons | 1 | | 84 | In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a | threshold | Barrier | Path | None of the Above | 2 | | 85 | In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are | peak | Majority careers | Fixed donor and acceptor ions | Both a and c | 3| | 86 | The capacitance of a reverse biased PN junction | Increases as reverse bias is increased | Decreases as reverse bias is increased | Is insignificantly low | Decrease as reverse bias is increased | 2 | | 87 | For a PN junction diode, the current in reverse bias may be | Few miliamperes | Between 0.2 A and 15 A | Few amperes | Few micro or nano amperes | 4 | | 88 | In a PN junction when the applied voltage overcomes the potential, the diode current is large, which is known as | Depletion, negative bias | Barrier, forward bias | Reverse, reverse bias | Resistance, reverse bias | 2 | | 89 | A PN junction | Has low resistance in forward as well as reverse directions | Conducts in forward direction only | Conducts in reverse direction only | Has high resistance in forward as well as reverse directions | 1 | | 90 | What rectifier does? | Converting AC TO DC | Converting DC TO AC | Store AC POWER | Store DC POWER | 1 | | 91 | Maximum efficiency of Half Wave Rectifier is: | 0.25 | 0.65 | 0.41 | 0.85 | 1 | | 92 | Maximum efficiency of Full Wave Rectifier is: | 0.25 | 0.65 | 0.41 | 0.81 | 2 | | 93 | The ........ stores the electric charges. | Transformer | Capacitor | Resistor | None of the Above | 2 | | 94 | Which is the simplest form of the rectifier? | Full wavw rectifier | Bridge rectifier | Half wave rectifier | None of the Above | 3 | | 95 | How many junction do a diode consist? | 1 | 0 | 2 | 3 | 2 | | 96 | During reverse bias, a small current develops known as | Forward currenr | Reverse saturated current | Reverse surrent | Active current | 2 | | 97 | If the positive terminal of the battery is connected to the anode of the diode, then it is known as | Reeverse Biased | Shottky barrier | Forward biased | Equillibrium | 3 | | 98 | PN junction failure below 5 V is caused primarily by | Avalanche breakdown | Zener breakdown | Either (a) or (b) | Both a and b | 4 | | 99 | Which one of the following diodes uses three layers? | PIN Diode | General purpose diode | Both a and b | None of the above | 1 |