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Questions and Answers
What is the electron density in the n-type semiconductor?
What is the electron density in the n-type semiconductor?
- 8 x 10^13 cm-3 (correct)
- 5 x 10^12 cm-3 (correct)
- 2.3 x 10^4 cm-3 (correct)
- 10 x 10^13 cm-3 (correct)
Which of the following mobilities has a higher value in the n-type semiconductor?
Which of the following mobilities has a higher value in the n-type semiconductor?
- Electron mobility (correct)
- Neither has a significant mobility
- Hole mobility
- Both have the same mobility
How is the conductivity of an n-type semiconductor primarily determined?
How is the conductivity of an n-type semiconductor primarily determined?
- By both hole and electron mobilities equally
- By the hole density and hole mobility only
- By the product of electron density and electron mobility (correct)
- By the hole density only
If the hole density in the n-type semiconductor is 5 x 10^12 cm-3, what might you infer about the majority charge carriers?
If the hole density in the n-type semiconductor is 5 x 10^12 cm-3, what might you infer about the majority charge carriers?
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What is the role of a p-n junction in semiconductor devices?
What is the role of a p-n junction in semiconductor devices?
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Study Notes
Semiconductor Conductivity Calculation
- Electron density is 8 x 1013 cm-3
- Hole density is 5 x 1012 cm-3
- Electron mobility is 2.3 x 104 cm2/V-s
- Hole mobility is 100 cm2/V-s
p-n Junction Formation
- A p-n junction is formed when a p-type semiconductor is joined with an n-type semiconductor.
- When the two materials are joined, electrons from the n-type material diffuse into the p-type material, and holes from the p-type material diffuse into the n-type material.
- This diffusion of charge carriers leaves a depletion region in the junction, which is free of mobile charge carriers.
- The depletion region creates a potential barrier, which prevents further diffusion of charge carriers and helps maintain the junction's equilibrium.
Forward and Reverse Bias
- Forward bias: When a positive voltage is applied to the p-type side and a negative voltage to the n-type side, the potential barrier is reduced, allowing current to flow through the junction.
- Reverse bias: When a negative voltage is applied to the p-type side and a positive voltage to the n-type side, the potential barrier is increased, reducing the current flow through the junction.
- Forward bias: Allows current to flow, increasing conductivity
- Reverse bias: Restricts current flow, decreasing conductivity
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