Semiconductor Materials and Devices Quiz

Semiconductor Materials and Devices

• Crystalline Structure: Silicon and germanium have a face-centered cubic (fcc) crystal lattice.
• Energy Gap: The energy gap between valence and conduction bands in semiconductors is approximately 1 electron volt (eV).
• Resistivity: Typical resistivity of semiconductors ranges from 10⁻⁴ to 10¹⁰ Ω-cm.
• Metallic Bonding: Metallic bonding is significant in metals.
• Compensated Semiconductor: A semiconductor doped with both donor and acceptor impurities is called a compensated semiconductor.
• Drift Current: Current flow in a semiconductor due to an applied electric field is called drift current.
• Diffusion Current: Movement of charge carriers without an applied electric field is diffusion current.
• High-Speed Integrated Circuits: Gallium arsenide (GaAs) is a suitable semiconductor material for high-speed integrated circuits.
• Impurity Concentration: One part per million (ppm) impurity concentration is needed in silicon to significantly change its electrical properties from a poor to a good conductor.
• High Heat Conductivity: Diamond has the highest heat conductivity and is used as a heat sink in semiconductors.
• Pinch-Off Voltage (FET): The gate-source voltage that causes the drain current (ID) to zero in a field-effect transistor (FET) is the pinch-off voltage.
• MOSFET Insulator: Silicon dioxide (SiO2) is the common insulator used in most metal-oxide-semiconductor field-effect transistors (MOSFETs).
• Drain Current (JFET): The drain current in a junction field-effect transistor (JFET) is zero when the gate-source voltage (VGS) equals the pinch-off voltage (VP).
• Threshold Voltage (MOSFET): The gate-source voltage needed to form a channel for current flow in an enhancement-type MOSFET is the threshold voltage.
• Passivation: A thin oxide film is grown on the surface of a semiconductor device to protect it from contamination; this is passivation.
• Transistor Region: A transistor is in the cutoff region when the base-emitter junction is reverse-biased and the base-collector junction is forward-biased.
• Hybrid Parameters: The hybrid parameters 'hr' and 'ho' are often neglected in circuit analysis
• GaAs Type: Gallium arsenide (GaAs) is a compound semiconductor material.
• CMOS Susceptibility: CMOS integrated circuits are susceptible to damage from static electricity.
• N-type Semiconductor: Adding a donor impurity to a semiconductor material makes it N-type.
• Hole Flow: Holes flow in the opposite direction to electrons because charge carriers are passed from atom to atom.
• IC Regulator: The 337 is a three-terminal integrated circuit voltage regulator with a variable negative output voltage.
• Switching Regulator Protection: Snubber circuits protect active devices in switching regulators from large overcurrents and overvoltages.
• Control System Compensation: Compensating and cross-coupling networks are designed and their time constants adjusted for complex control systems.
• Motor Phase Control: The half-wave converter is the simplest converter in motor phase control
• Common-Collector Current Gain: Gamma represents current gain in a common-collector configuration.
• T-Flip-Flop Function: A T flip-flop divides the input frequency by two.
• Line Regulation: Line regulation is affected by changes in output and input voltages.
• Load Regulation: Load regulation is impacted by changes in load current and output voltage.
• Differentiator Feedback: In a differentiator, the feedback element is a resistor.
• Wien-Bridge Oscillator Type: Wien-bridge oscillators use positive feedback.
• Memory Equivalent: Memory is also known as primary storage.
• Output Devices: Common output units include printers and screens.
• AC Wave Period: The period of an AC wave is the reciprocal of its frequency.
• Magnetic Flux Source: Magnetic flux originates from the motion of charged particles.
• Solar Panel Current: Connecting multiple solar cell groups in parallel increases the useful current from a solar panel.
• Rheostat Advantage: Rheostats can handle more current than potentiometers.
• Electrostatic Force: The force between electrically charged objects is electrostatic force.
• Transformer Capacitance Minimization: Placing windings on opposite sides of a toroidal core minimizes capacitance between transformer windings.
• Battery Inventor: Alessandro Volta invented the battery.
• Charles Babbage's Contribution: Charles Babbage is famous for his contributions to computers.
• Electric Generator Inventor: Michael Faraday invented the electric generator.
• Transistor Invention Decade: The transistor was invented in the 1940s.
• Bakelite Inventor: Leo Hendrik Baekeland invented Bakelite.