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When was the idea for a thyristor (THY) initiated?
THY is the same as a silicon-controlled rectifier (SCR).
True
The ______ is the only semiconductor device that does not have a gate signal.
diode
What is the most important switch in not-controllable power semiconductor devices category?
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How can a THY be triggered?
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What type of power semiconductor devices are responsible for being the real 'horse power' of line-commutated HVDC systems?
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What is the main advantage of Bidirectional Control Thyristors (BCTs) in compact valve designs for FACTS applications?
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Integrated Gate-Commutated Thyristors (IGCTs) offer significant improvements over Gate Turn-Off Thyristors (GTOs) in terms of turn-off time delay.
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____ valves behave in essence in the same way as a very large THY, but are complex circuits including cooling systems and ancillary circuits.
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What does LTT stand for?
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In HVDC, why are typically hundreds of THYs series-connected?
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BCT is built by the integration at wafer level of two antiparallel-connected THYs with two independent ____.
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IGCT is an improved version of GTO with increased forward voltage and longer commutation times.
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When was the first silicon-controlled rectifier (SCR) produced?
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Power diodes require a gate signal for their operation.
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What is the main function of a snubber diode in power electronics circuits?
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The main manufacturers of high voltage direct current (HVDC) systems are ABB, Siemens, and __________.
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Match the following power semiconductor devices with their corresponding features: THY, IGCT, IGBT
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Study Notes
Power Semiconductor Devices for HVDC and FACTS Systems
- Power semiconductor devices are key components in power converters for High Voltage Direct Current Transmission (HVDC) and Flexible Alternating Current Transmission Systems (FACTS).
History of Power Semiconductors
- 1940-1945: First steps toward modern power electronics with the appearance of ignitron and excitron, and development of silicon and germanium devices.
- 1950: W.B. Shockley initiates the idea for a thyristor (THY) with a p-n hook-collector.
- 1952: Ebers analyzes the operation mechanism of THY.
- 1956: J.L. Moll further investigates the switching mechanism of THY.
- 1957: First THY, known as silicon-controlled rectifier (SCR), is produced by General Electric Company.
- 1960: Gate turn-off thyristor (GTO) is developed.
- 1968: Insulated gate controlled thyristor (IGCT) is developed.
- 1975: Metal oxide semiconductor field effect transistor (MOSFET) is developed.
- 1980s: Isolated gate bipolar transistor (IGBT) is developed, combining the advantages of bipolar transistors and MOSFETs.
Classification of Power Semiconductor Devices
- Not-Controllable Devices: Power diodes, which do not need control, with examples of applications in rectification, clamping, and overvoltage protection.
Thyristor (THY)
- Structure: Four-layer p-n-p-n material with three p-n junctions.
- Operation: THY can be turned on by applying a short positive current pulse at the gate, and remains in the on-state until the next current zero crossing.
- Features: High current densities possible (in the range of kA), latched operation, and controllability limited to one switching per half-cycle.
- Applications: HVDC, with highly reliable and robust operation, used in series-connected THY valves.
Light-Triggered Thyristor (LTT)
- Triggered by optical fibers transmitting the gate signal in the form of infrared light pulse directly to a light-sensitive region of the silicon around the gate.
- Features: Improved noise rejection, simplified circuit, and reduced complexity, but with higher cost and limited manufacturers.
Gate Turn-Off Thyristor (GTO)
- Structure: Similar to THY, but with turn-off controllability.
- Operation: GTO turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Long turn-off times, limiting applications to only 1 kHz switching frequency, and requiring external snubber circuits.
- Applications: Being replaced by IGCTs in more demanding applications.
Integrated Gate-Commutated Thyristor (IGCT)
- Structure: Press-pack device with improved characteristics.
- Operation: IGCT turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Reduced forward voltage and shorter commutation times compared to GTO.
- Applications: Used in HVDC and FACTS systems, with improved performance and reliability.
Power Semiconductor Devices for HVDC and FACTS Systems
- Power semiconductor devices are key components in power converters for High Voltage Direct Current Transmission (HVDC) and Flexible Alternating Current Transmission Systems (FACTS).
History of Power Semiconductors
- 1940-1945: First steps toward modern power electronics with the appearance of ignitron and excitron, and development of silicon and germanium devices.
- 1950: W.B. Shockley initiates the idea for a thyristor (THY) with a p-n hook-collector.
- 1952: Ebers analyzes the operation mechanism of THY.
- 1956: J.L. Moll further investigates the switching mechanism of THY.
- 1957: First THY, known as silicon-controlled rectifier (SCR), is produced by General Electric Company.
- 1960: Gate turn-off thyristor (GTO) is developed.
- 1968: Insulated gate controlled thyristor (IGCT) is developed.
- 1975: Metal oxide semiconductor field effect transistor (MOSFET) is developed.
- 1980s: Isolated gate bipolar transistor (IGBT) is developed, combining the advantages of bipolar transistors and MOSFETs.
Classification of Power Semiconductor Devices
- Not-Controllable Devices: Power diodes, which do not need control, with examples of applications in rectification, clamping, and overvoltage protection.
Thyristor (THY)
- Structure: Four-layer p-n-p-n material with three p-n junctions.
- Operation: THY can be turned on by applying a short positive current pulse at the gate, and remains in the on-state until the next current zero crossing.
- Features: High current densities possible (in the range of kA), latched operation, and controllability limited to one switching per half-cycle.
- Applications: HVDC, with highly reliable and robust operation, used in series-connected THY valves.
Light-Triggered Thyristor (LTT)
- Triggered by optical fibers transmitting the gate signal in the form of infrared light pulse directly to a light-sensitive region of the silicon around the gate.
- Features: Improved noise rejection, simplified circuit, and reduced complexity, but with higher cost and limited manufacturers.
Gate Turn-Off Thyristor (GTO)
- Structure: Similar to THY, but with turn-off controllability.
- Operation: GTO turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Long turn-off times, limiting applications to only 1 kHz switching frequency, and requiring external snubber circuits.
- Applications: Being replaced by IGCTs in more demanding applications.
Integrated Gate-Commutated Thyristor (IGCT)
- Structure: Press-pack device with improved characteristics.
- Operation: IGCT turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Reduced forward voltage and shorter commutation times compared to GTO.
- Applications: Used in HVDC and FACTS systems, with improved performance and reliability.
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Description
This chapter covers the history and development of power semiconductor devices, including thyristors, ignitrons, and excitrons, and their applications in HVDC and FACTS systems.
