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Questions and Answers
When was the idea for a thyristor (THY) initiated?
When was the idea for a thyristor (THY) initiated?
THY is the same as a silicon-controlled rectifier (SCR).
THY is the same as a silicon-controlled rectifier (SCR).
True
The ______ is the only semiconductor device that does not have a gate signal.
The ______ is the only semiconductor device that does not have a gate signal.
diode
What is the most important switch in not-controllable power semiconductor devices category?
What is the most important switch in not-controllable power semiconductor devices category?
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How can a THY be triggered?
How can a THY be triggered?
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What type of power semiconductor devices are responsible for being the real 'horse power' of line-commutated HVDC systems?
What type of power semiconductor devices are responsible for being the real 'horse power' of line-commutated HVDC systems?
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What is the main advantage of Bidirectional Control Thyristors (BCTs) in compact valve designs for FACTS applications?
What is the main advantage of Bidirectional Control Thyristors (BCTs) in compact valve designs for FACTS applications?
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Integrated Gate-Commutated Thyristors (IGCTs) offer significant improvements over Gate Turn-Off Thyristors (GTOs) in terms of turn-off time delay.
Integrated Gate-Commutated Thyristors (IGCTs) offer significant improvements over Gate Turn-Off Thyristors (GTOs) in terms of turn-off time delay.
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____ valves behave in essence in the same way as a very large THY, but are complex circuits including cooling systems and ancillary circuits.
____ valves behave in essence in the same way as a very large THY, but are complex circuits including cooling systems and ancillary circuits.
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What does LTT stand for?
What does LTT stand for?
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In HVDC, why are typically hundreds of THYs series-connected?
In HVDC, why are typically hundreds of THYs series-connected?
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BCT is built by the integration at wafer level of two antiparallel-connected THYs with two independent ____.
BCT is built by the integration at wafer level of two antiparallel-connected THYs with two independent ____.
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IGCT is an improved version of GTO with increased forward voltage and longer commutation times.
IGCT is an improved version of GTO with increased forward voltage and longer commutation times.
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When was the first silicon-controlled rectifier (SCR) produced?
When was the first silicon-controlled rectifier (SCR) produced?
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Power diodes require a gate signal for their operation.
Power diodes require a gate signal for their operation.
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What is the main function of a snubber diode in power electronics circuits?
What is the main function of a snubber diode in power electronics circuits?
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The main manufacturers of high voltage direct current (HVDC) systems are ABB, Siemens, and __________.
The main manufacturers of high voltage direct current (HVDC) systems are ABB, Siemens, and __________.
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Match the following power semiconductor devices with their corresponding features: THY, IGCT, IGBT
Match the following power semiconductor devices with their corresponding features: THY, IGCT, IGBT
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Study Notes
Power Semiconductor Devices for HVDC and FACTS Systems
- Power semiconductor devices are key components in power converters for High Voltage Direct Current Transmission (HVDC) and Flexible Alternating Current Transmission Systems (FACTS).
History of Power Semiconductors
- 1940-1945: First steps toward modern power electronics with the appearance of ignitron and excitron, and development of silicon and germanium devices.
- 1950: W.B. Shockley initiates the idea for a thyristor (THY) with a p-n hook-collector.
- 1952: Ebers analyzes the operation mechanism of THY.
- 1956: J.L. Moll further investigates the switching mechanism of THY.
- 1957: First THY, known as silicon-controlled rectifier (SCR), is produced by General Electric Company.
- 1960: Gate turn-off thyristor (GTO) is developed.
- 1968: Insulated gate controlled thyristor (IGCT) is developed.
- 1975: Metal oxide semiconductor field effect transistor (MOSFET) is developed.
- 1980s: Isolated gate bipolar transistor (IGBT) is developed, combining the advantages of bipolar transistors and MOSFETs.
Classification of Power Semiconductor Devices
- Not-Controllable Devices: Power diodes, which do not need control, with examples of applications in rectification, clamping, and overvoltage protection.
Thyristor (THY)
- Structure: Four-layer p-n-p-n material with three p-n junctions.
- Operation: THY can be turned on by applying a short positive current pulse at the gate, and remains in the on-state until the next current zero crossing.
- Features: High current densities possible (in the range of kA), latched operation, and controllability limited to one switching per half-cycle.
- Applications: HVDC, with highly reliable and robust operation, used in series-connected THY valves.
Light-Triggered Thyristor (LTT)
- Triggered by optical fibers transmitting the gate signal in the form of infrared light pulse directly to a light-sensitive region of the silicon around the gate.
- Features: Improved noise rejection, simplified circuit, and reduced complexity, but with higher cost and limited manufacturers.
Gate Turn-Off Thyristor (GTO)
- Structure: Similar to THY, but with turn-off controllability.
- Operation: GTO turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Long turn-off times, limiting applications to only 1 kHz switching frequency, and requiring external snubber circuits.
- Applications: Being replaced by IGCTs in more demanding applications.
Integrated Gate-Commutated Thyristor (IGCT)
- Structure: Press-pack device with improved characteristics.
- Operation: IGCT turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Reduced forward voltage and shorter commutation times compared to GTO.
- Applications: Used in HVDC and FACTS systems, with improved performance and reliability.
Power Semiconductor Devices for HVDC and FACTS Systems
- Power semiconductor devices are key components in power converters for High Voltage Direct Current Transmission (HVDC) and Flexible Alternating Current Transmission Systems (FACTS).
History of Power Semiconductors
- 1940-1945: First steps toward modern power electronics with the appearance of ignitron and excitron, and development of silicon and germanium devices.
- 1950: W.B. Shockley initiates the idea for a thyristor (THY) with a p-n hook-collector.
- 1952: Ebers analyzes the operation mechanism of THY.
- 1956: J.L. Moll further investigates the switching mechanism of THY.
- 1957: First THY, known as silicon-controlled rectifier (SCR), is produced by General Electric Company.
- 1960: Gate turn-off thyristor (GTO) is developed.
- 1968: Insulated gate controlled thyristor (IGCT) is developed.
- 1975: Metal oxide semiconductor field effect transistor (MOSFET) is developed.
- 1980s: Isolated gate bipolar transistor (IGBT) is developed, combining the advantages of bipolar transistors and MOSFETs.
Classification of Power Semiconductor Devices
- Not-Controllable Devices: Power diodes, which do not need control, with examples of applications in rectification, clamping, and overvoltage protection.
Thyristor (THY)
- Structure: Four-layer p-n-p-n material with three p-n junctions.
- Operation: THY can be turned on by applying a short positive current pulse at the gate, and remains in the on-state until the next current zero crossing.
- Features: High current densities possible (in the range of kA), latched operation, and controllability limited to one switching per half-cycle.
- Applications: HVDC, with highly reliable and robust operation, used in series-connected THY valves.
Light-Triggered Thyristor (LTT)
- Triggered by optical fibers transmitting the gate signal in the form of infrared light pulse directly to a light-sensitive region of the silicon around the gate.
- Features: Improved noise rejection, simplified circuit, and reduced complexity, but with higher cost and limited manufacturers.
Gate Turn-Off Thyristor (GTO)
- Structure: Similar to THY, but with turn-off controllability.
- Operation: GTO turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Long turn-off times, limiting applications to only 1 kHz switching frequency, and requiring external snubber circuits.
- Applications: Being replaced by IGCTs in more demanding applications.
Integrated Gate-Commutated Thyristor (IGCT)
- Structure: Press-pack device with improved characteristics.
- Operation: IGCT turns on with a short positive current pulse, and turns off with a large negative current pulse.
- Features: Reduced forward voltage and shorter commutation times compared to GTO.
- Applications: Used in HVDC and FACTS systems, with improved performance and reliability.
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Description
This chapter covers the history and development of power semiconductor devices, including thyristors, ignitrons, and excitrons, and their applications in HVDC and FACTS systems.
