Microfabrication in IC: Etching and Ion Implantation
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Questions and Answers

What is the primary purpose of ion implantation in Microelectromechanical Systems (MEMS) fabrication?

To tailor the mechanical and electrical properties of microscale devices.

What properties can be tailored in microscale devices using ion implantation in MEMS fabrication?

Mechanical and electrical properties.

What type of devices are fabricated using ion implantation in MEMS?

Microscale devices.

What is the advantage of using ion implantation in MEMS fabrication?

<p>It allows for precise control over the mechanical and electrical properties of microscale devices.</p> Signup and view all the answers

How does ion implantation tailor the properties of microscale devices in MEMS?

<p>By introducing ions into the material to change its properties.</p> Signup and view all the answers

What is the result of ion implantation in MEMS fabrication?

<p>Customized microscale devices with tailored mechanical and electrical properties.</p> Signup and view all the answers

What is the significance of ion implantation in MEMS fabrication?

<p>It enables the creation of customized microscale devices with specific properties.</p> Signup and view all the answers

What is the role of ion implantation in MEMS device manufacturing?

<p>To create microscale devices with tailored mechanical and electrical properties.</p> Signup and view all the answers

What is the benefit of using ion implantation in MEMS fabrication?

<p>It enables the creation of customized microscale devices with specific properties.</p> Signup and view all the answers

What is the typical etch rate in plasma-based etching?

<p>1 μm/min</p> Signup and view all the answers

What are the two components present in plasma that contribute to directional etching and high etch selectivity?

<p>Ionic species and chemical reactive species</p> Signup and view all the answers

What is the reaction that occurs when silicon reacts with fluorine gas in a plasma etching process?

<p>Si (s) + 4F (g) → SiF4 (g)</p> Signup and view all the answers

What are the three loss mechanisms that occur in a plasma, leading to a steady-state plasma?

<p>Recombination of ions and electrons, drift and diffusion to walls, and recombination of radicals</p> Signup and view all the answers

What is the typical density of ions in a plasma, in units of ions/cm³?

<p>10⁹ – 10¹³/cm³</p> Signup and view all the answers

What is the primary difference between plasma-based etching and wet chemical etching?

<p>Directional etching vs. isotropic etching</p> Signup and view all the answers

What is the role of the self-biased electric field in plasma-based etching?

<p>It enables directional etching due to the presence of ionic species in the plasma</p> Signup and view all the answers

What is the advantage of using RF plasma over DC plasma for dry etching?

<p>RF plasma is more widely used due to its ability to modulate the etching rate and profile</p> Signup and view all the answers

What is the term for the process by which ions and electrons recombine in a plasma, leading to the loss of charged particles?

<p>Recombination</p> Signup and view all the answers

What is the typical reaction that occurs when a fluorine radical combines with silicon in a plasma etching process?

<p>4F + Si → SiF₄</p> Signup and view all the answers

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