Diffusion Controlled Oxidation Growth Parameters and Types

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18 Questions

Which type of oxidation process uses high-purity oxygen gas to oxidize silicon?

Dry oxidation

What is a characteristic of dry oxidation compared to wet oxidation?

Slow growth of oxide

In which oxidation process does the oxidizing element consist of one hydrogen atom and one oxygen molecule?

Wet oxidation

What does the wet oxidation process involve at high temperatures?

Steam

Which type of oxidation process results in oxide layers of usually higher quality?

Dry oxidation

What temperature range is used in the Rapid Thermal Process (RTP) for oxidizing silicon?

400-1300°C

What is the purpose of the oxidation stage in semiconductor device manufacturing?

To generate a protective layer of silicon dioxide on the wafer's surface

How are wafers cleaned before the oxidation process?

Via wet chemistry with a two-stage RCA clean

What is the industry standard method for cleaning wafer surfaces?

Wet Chemistry - RCA Clean

What does inspection failure for oxidized wafers refer to?

Overgrown oxide layers and uneven oxidation

Which method is utilized primarily for creating a protective layer of silicon dioxide on a wafer's surface?

Dry Oxidation

How are oxidized wafers inspected for various properties after the oxidation process?

Optical inspection for defects

What is the purpose of using a mixture of hydrochloric acid, hydrogen peroxide, and deionized (DI) water in wafer cleaning?

To remove metals from the wafer surface

During thermal oxidation of a silicon wafer, what is the temperature range typically used for growing a layer of silicon dioxide?

900°C to 1200°C

Which process involves the reaction of oxygen gas with the silicon surface to produce a protective layer of silicon dioxide on the wafer?

Dry oxidation

What method is commonly used for rinsing a silicon wafer after cleaning processes are completed?

Spray rinse

Which tool is used for scrubbing the wafer surface with a brush or high pressure arm as part of the cleaning process?

Wafer Scrubber

What mechanism is primarily used in wet oxidation for removing particles and organic materials during wafer cleaning?

Electric Repulsion

Learn about the second phase of diffusion-controlled oxidation and the parameters affecting oxidation growth rate, including temperature, oxidizing medium, pressure, silicon doping level, and crystal orientation. Explore the types of oxidation, such as dry oxidation where silicon reacts with oxygen gas to form silicon dioxide.

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