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Questions and Answers
Quel est le nom complet du transistor MOS ?
Quel est le nom complet du transistor MOS ?
Transistor à effet de champ (MOS)
Le transistor MOS a été inventé en 1959.
Le transistor MOS a été inventé en 1959.
False
Quels sont les deux types de circuits MOS ?
Quels sont les deux types de circuits MOS ?
NMOS et CMOS
Quel est le rôle du canal dans un transistor MOS ?
Quel est le rôle du canal dans un transistor MOS ?
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Quel est l'avantage principal de la technologie CMOS par rapport à la technologie NMOS ?
Quel est l'avantage principal de la technologie CMOS par rapport à la technologie NMOS ?
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Qu'est-ce qu'une porte logique ?
Qu'est-ce qu'une porte logique ?
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Les portes logiques CMOS sont toujours plus rapides que les portes logiques NMOS.
Les portes logiques CMOS sont toujours plus rapides que les portes logiques NMOS.
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Quel est le principal inconvénient des portes logiques à précharge ?
Quel est le principal inconvénient des portes logiques à précharge ?
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Associez les technologies CMOS avec les années correspondantes :
Associez les technologies CMOS avec les années correspondantes :
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Qu'est-ce qu'un 'System On Chip' (SOC) ?
Qu'est-ce qu'un 'System On Chip' (SOC) ?
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Le coût de développement d’un nouveau circuit VLSI est relativement faible.
Le coût de développement d’un nouveau circuit VLSI est relativement faible.
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Qu'est-ce que la loi de Moore ?
Qu'est-ce que la loi de Moore ?
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La loi de Moore est toujours valable aujourd'hui.
La loi de Moore est toujours valable aujourd'hui.
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Quel est le principal défi à relever pour l'industrie des semi-conducteurs aujourd'hui ?
Quel est le principal défi à relever pour l'industrie des semi-conducteurs aujourd'hui ?
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Qu'est-ce qu'un multiprocesseur monolithique ?
Qu'est-ce qu'un multiprocesseur monolithique ?
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Quel est le nom de la caractéristique qui permet aux processeurs de forte puissance de consommer moins d’énergie que ceux de faible puissance ?
Quel est le nom de la caractéristique qui permet aux processeurs de forte puissance de consommer moins d’énergie que ceux de faible puissance ?
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Study Notes
Introduction
- The presentation is about the evolution of MOS logic circuits to integrated circuits.
- The speaker, François ANCEAU, is a Professor Emeritus from CNAM and works at Lip6/CIAN.
- The presentation, titled "From MOS to Integrated Circuits", was given at CNAM in November 2013.
- The presentation is divided into two parts.
Evolution Plan (Part 1)
- Introduction
- Electronic tubes
- History
- Functioning
- Logical circuits with levels and impulses
- Electromagnetic relays
- Semiconductor devices (logic)
- Doping N and P
- Diodes
- Junctions
- Bipolar transistors
- Point-contact and junction transistors
- Manufacturing processes
- Synchronous logic circuits
Evolution Plan (Part 2)
- Field-Effect Transistors (MOS)
- History
- Metal or polysilicon gate
- NMOS and CMOS circuits
- CMOS complementary technology
- Integrated circuits
- Towards gigantism (incremental scaling)
MOS Transistors
- Attala MOS (1959) is discussed.
History of MOS Transistors
- Invented in 1933 by J.E. Lilienfeld, the solid-state triode couldn't be used practically
- In 1959, John Attala and Dahwon Kahng proposed using silicon dioxide as insulator in MOS transistors.
- By 1968 Faggin and Klein demonstrated the effectiveness of polycrystalline silicon in creating MOS transistor grids.
- In 1963, Sha and Wanlass developed CMOS circuits using complementary transistors to achieve low-power designs.
Field Effect
- The presentation describes the functioning of field effect transistors.
MOS Capacitance
- The presentation illustrates the structure and function of Metal-Oxide-Semiconductor (MOS) capacitance with diagrams.
- It demonstrates the concepts of applying an electric field to modify the conductivity of the semiconductor material.
- It elaborates on the principles of electron flow and their changes in the presence of an electrical field.
Transistor MOS
- They are composed of one MOS capacitor and two lateral electrodes (source and drain).
- They exist in two complementary configurations: N-type (with a P-type substrate) and P-type (with an N-type substrate).
- These transistors have parasitic capacitances at drains and sources which affect them.
Characteristics of a MOS Transistor
- This section addresses the practical functionalities of MOS transistors.
The MOS Transistor Today
- The MOS transistor is the ideal component for the development of integrated circuits (ICs) in all of their complex forms.
- There are both discrete versions (MOSFETs) used in power applications, and integrated ones with large populations forming the functionality of modern complex circuits.
Exponential Evolution
- The presentation highlights the exponential growth of integrated circuits.
- Integrated circuits' complexity has exceeded what was achievable in older architectures.
CMOS Gate Speed
- The performance of CMOS gates increases as technology progresses.
- This trend shows a regular and predictable growth over time.
NMOS Circuitry
- Used in 1970-1980 microprocessors (8 and 16-bits.)
- Similar to RTL bipolar circuitry, but uses a MOSFET instead of a resistor, providing a voltage compatibility characteristic for digital logic.
- Matriciel Logic Array (PLA) architecture is shown.
- On-off times are shown.
CMOS Logic
- The presentation discusses the functioning of CMOS logic.
- It highlights the concept of the MOS transistor acting as a switch, controlled by voltage.
- It demonstrates different states of transistors: saturated and non saturated.
- The presentation shows details of how data is loaded and unloaded.
CMOS Logic Charging
- The presentation illustrates charging a capacitor with a Transistor.
- Different voltage conditions and their effects on current are discussed.
Conduction Networks
- These networks are inspired by relay designs.
- Networks may use one or two types of transistors (or a mixed configuration, allowing for full function).
- The section illustrates how connections can be made in series or in parallel.
CMOS Conduction Networks
- The networks are shown to be formed of combinations of N or P transistors.
- The use of both N-type and P-type transistors allows for full functionality encompassing all possible logic states.
Classic Gates
- The presentation illustrates the structure of classic gates using N and P transistors.
- This section showcases the application of dual logic in CMOS.
Inverters
- Inverters with N and P transistors are detailed.
- The symmetrical behaviour of source and drain is discussed.
NAND Gates
- This section describes how NAND gates are built.
- The concept of dual functionality, with series and parallel equivalent networks is introduced.
Complex Gates
- The presentation discusses more intricate logic gates (e.g., NOT AND OR gates), emphasizing how they are built from combining N-type and P-type transistors.
- Diagram and table representing these configurations are presented.
Connection Logic
- Defining connection potentials for different logical network structures (e.g., series and parallel connections).
Examples (ET, OU, OUEX)
- Logic operations (AND, OR, and an XOR-like gate) are detailed and illustrated.
- Use cases and circuit representations of these are also shown.
Three-state Gates
- The logic behavior of three-state gates is shown.
- Uses cases are described including the ability of multiple input/output sources.
Dynamic Logic
- Discusses the characteristics of dynamic logic.
- This logic style leverages capacitive behavior to store data, improving speed but increasing complexity in design.
- Features, like simplified circuit blocks and charge-driven logic, are discussed.
Precharge Logic
- This section describes techniques of enhancing dynamic logic performance via precharge sequences.
- The trade-offs, like reduced gate speed due to timing constraints, are highlighted.
CMOS Technology
- The presentation discusses various CMOS process and design parameters, including metrics used to evaluate their performance.
Tranches of Circuits
- Circuits are built together on a single "tranche" or "wafer".
- The section details costs associated with fabricating circuits on wafers, demonstrating their interconnectedness.
Circuit Insolation by Circuit
- The presentation describes methods to accurately pattern and fabricate integrated circuits.
- Tools use optics to create patterns on substrates, allowing finer linework and more complicated circuit designs.
CMOS Inverter Fabrication
- The presentation details the step-by-step process of creating a CMOS inverter in integrated circuits (ICs).
Fabrication of Trenches/Cavities
- The process of isolating structural regions in a circuit to create transistors.
- Various different techniques are illustrated, including photolithography, chemical etching or plasma etching, and the use of different types of materials.
Ion Implantation
- The presentation discusses how ion implantation is used to change properties of silicon transistors, creating functional structures or regions.
- Different energy levels affect the depth and extension of the resulting materials.
Creation of an Oxide Region
- The presentation describes how oxide layers are created in integrated circuit fabrication.
Nitride Masking and Growth
- The presentation details how a nitride layer is used to manage the growth of the oxide layer.
Oxide Development
- The presentation discusses creating the desired oxide layer.
Gate Production:
- The steps for producing gates, including nitride removal and subsequent oxide growing in circuits (ICs).
Creation of Polysilicon Gates
- The process of adding polycrystalline silicon layers (polysilicon) to create functional gates and interconnect structures in ICs.
Polysilicon Gate Production
- The presentation highlights the process steps involved in creating functional polysilicon gates in integrated circuits (ICs).
Making Active Regions
- How to create regions for P and N transistors via masking and ion implantation.
Fabrication of Active Regions N
- The construction of N-type active areas uses a similar procedure to P-type creation.
The Reality of the Canal
- The channel, a crucial part of the transistor, is illustrated.
- Its dimensions and properties are highlighted as crucial to the overall circuit functioning.
Contact Fabrication-Masking
- The process of creating and isolating contacts in integrated circuits. (isolating areas).
Contact Fabrication-Etching and Metalization
- The steps to create holes (or via) for connections, using plasma-etching.
- Metalization is discussed as crucial to build the connections between separated areas, utilizing techniques like evaporation.
Transistor and Contact Cross-section
- A graphical representation of a detailed cross-section including transistors and contacts within a circuit structure is presented.
Metallization Levels
- Steps described to build multilevel metal layers in a circuit.
Assembled Circuits
- Presentation shows examples of completed integrated circuits and physical chip designs.
Mask Design
- Describes the process of designing a mask pattern to create a desired circuit feature.
Schematic of an Inverter
- A schematic layout of an inverter circuit showing the interconnection of various components within the circuit is provided.
Unit Cell Layout
- The presentation illustrates a diagram of a unit cell within a complex circuit (e.g., an arithmetic and logic unit within a processor).
Pre-characterized Cell Assembly
- Shows an example of cell-based circuit assembly, and how modern techniques allow complex structures to be efficiently fabricated.
CMOS Circuit Performance
- Presents diagrams showing how CMOS circuitry performance has evolved over time.
Transistor Count Evolution
- Graph illustrating how the number of transistors on a chip (like a processor) has been increasing over time.
Performance Trends (per processor)
- Graph demonstrating how the performance (in MIPS) of different microprocessor families has improved over time.
Power Consumption Trends
- Graph displaying how the power consumption of microprocessors of different technologies and generations has evolved over time.
Efficiency (Architectural and Thermal)
- The presentation highlights how the efficiency of circuit architectures and thermal management mechanisms have changed over time.
Two Classes of Processors
- Graph comparing the power consumption with performance for different types of processors.
The Culprit
- Discussing a public apology by an Intel executive related to performance claims for a processor.
CMOS Circuit Design Concepts
- Key concepts in the design of CMOS circuits and integrated components are mentioned, with brief descriptions.
Evolution of Component Notions
- The evolution of the design and use of integrated circuits, from individual components to complex multi-processing chips, is outlined in historical stages.
Topological Problem
- Discusses the topological limitations in the scale of very large integrated circuits (VLSI) and its challenges in design.
Circuit Design Complexity
- Illustrates the vast intricacy of designing a complex integrated circuit, through analogy compared to map or artwork requirements.
Topological Issues (suite)
- Discusses additional topological challenges and considerations in VLSI design.
Internal Circuit World
- This section discusses the high costs and speeds associated with inputs and outputs.
VLSI Development Costs
- Details the vast costs involved in designing integrated circuits (VLSI).
Inside a Pentium 4 (Northwood, 2004)
- Provides technical details on a specific version of a processor chip, including dimensions, frequency, and transistor count.
Intel Pentium 4 (Northwood) (2004) Technical Specifications
- Provides specific details on the characteristics of the 2004 Pentium 4 architecture, including its components, technology, and features.
Automatically Designed Circuits
- This section describes the automation in designing integrated circuits (ICs).
Evolution of Complex Circuit Prices
- Shows how the price of complex circuits has decreased.
Multiprocessors Monolithic
- Discusses the advancement of multi-core processors on a single chip to enhance performance.
Monolithic Supercomputer
- This section highlights a specific example of a powerful multi-core, multi-processing, monolithic supercomputer circuit.
"System-on-Chip" Circuits
- This section discusses advanced circuits combining numerous components onto a single chip, providing comprehensive functionality.
Processor Bull Auriga 2
- This section details a specific example from a historical processor chip.
General Design Rule
- The general design principles in designing and evolving electronic devices, like replacing analogue methods with digital ones, are discussed.
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Description
Cette présentation explore l'évolution des circuits logiques MOS vers des circuits intégrés. Sous la direction du Professeur Émérite François ANCEAU, le sujet aborde l'histoire des tubes électroniques, des relais électromagnétiques et des transistors à effet de champ. La discussion s'étend également aux technologies CMOS et à l'intégration croissante des circuits.
