The Comprehensive study of factors affecting the quantum efficiency of a Plasma-Deposited GaAs/Si Nanoclusters PDF

Results in Materials The Comprehensive study of factors affecting the quantum efficiency of a Plasma- Deposited GaAs/Si Nanoclusters --Manuscript Draft-- Manuscript Number: Article Type: Research Pap...

Results in Materials The Comprehensive study of factors affecting the quantum efficiency of a Plasma- Deposited GaAs/Si Nanoclusters --Manuscript Draft-- Manuscript Number: Article Type: Research Paper Section/Category: Experimental Materials Science Keywords: gallium arsenide; silicon matrix; heterostructure; quantum efficiency Corresponding Author: Kulpash Iskakova Abai KazNPU KAZAKHSTAN First Author: Kulpash Iskakova Order of Authors: Kulpash Iskakova Abstract: This paper presents the results of a study of a developed new method for obtaining an gallium arsenide nanoclusters. Gallium arsenide nanoclusters are deposited on silicon by plasma spraying. In this way, the obtained nanostructures of the gallium arsenide matrix were studied by electron and atomic force microscopes. The effect of time on the formation of gallium arsenide nanostructure, its spatial location, cluster morphology, and the dependence of quantum efficiency in the irradiated range are discussed on the basis of experimental quantum efficiency spectra. We analyzed the quantum efficiency (QE) values of gallium arsenide nanostructures in the electromagnetic wave range obtained by measurements on the SCS10-Film. The maximum values of the quantum efficiency of the plasma-deposited GaAs nanocluster on silicon in the absorption range from 410 nm to 980 nm are 0.69 and 0.637 at wavelengths of 600 nm and 810 nm, respectively. Thus, our findings allow us to use this nanostructure as an active element of solar energy converters and as a material for electronic communication technology. Powered by Editorial Manager® and ProduXion Manager® from Aries Systems Corporation Cover Letter Kulpash Iskakova professor Department of Physics and Mathematics, Abai Kazakh Nationality Pedagogically University; Almaty, Dostyk 13, Kazakhstan. [email protected] Jing Xia, PhD March 23, 2024 Dear Editor-in-Chief, I am writing to submit my article entitled “The Comprehensive study of factors affecting the quantum efficiency of a Plasma-Deposited GaAs/Si Nanoclusters” for publication in the Results in materials. This manuscript is based on a date of my experimental work, submitted elsewhere for consideration. I believe this manuscript is suitable for the Journal of Results in materials because it combines research with in-depth analysis of individual contributions and the production of defect-free nanoclusters based on plasma deposition Based on these experiments, the optimal mode of plasma influence on the formation of nanoclusters on the surface of the irradiated sample was selected. Analysis methods scanning electron microscope (SEM), Energy dispersive spectrometer (EDS), and X-ray diffraction analysis were used to determine the structure, microhardness, phase, and elemental composition of the irradiated Si surface as well as the penetration depth of GaAs deposited on a single-crystal matrix. The purpose of this article is to describe the corresponding mechanisms of the formation of a gallium arsenide nanoclusters on a silicon matrix using the developed method of plasma deposition. The following case of the possibility of conducting an experiment using a low-temperature gas plasma (LGP) for heterogeneous physical and chemical processing processes at the gas (gas plasma)-solid body interface has been chosen. Many thanks for your time and consideration. Sincerely, Kulpash Iskakova Department of Physics and Mathematics, Abai Kazakh Nationality Pedagogically University Manuscript Click here to access/download;Manuscript;Quantum Efficiency of a Plasma-Deposited.docx Click here to view linked References The Comprehensive study of factors affecting the quantum efficiency of a Plasma-Deposited GaAs/Si Nanoclusters Authors: Kulpash Iskakova1* Affiliations: 1 Department of Physics and Mathematics, Abai Kazakh National Pedagogical University; Almaty, Dostyk 13, Kazakhstan. *Corresponding author. Email: [email protected] Abstract: This paper presents the results of a study of a developed new method for obtaining an gallium arsenide nanoclusters. Gallium arsenide nanoclusters are deposited on silicon by plasma spraying. In this way, the obtained nanostructures of the gallium arsenide matrix were studied by electron and atomic force microscopes. The effect of time on the formation of gallium arsenide nanostructure, its spatial location, cluster morphology, and the dependence of quantum efficiency in the irradiated range are discussed on the basis of experimental quantum efficiency spectra. We analyzed the quantum efficiency (QE) values of gallium arsenide nanostructures in the electromagnetic wave range obtained by measurements on the SCS10-Film. The maximum values of the quantum efficiency of the plasma-deposited GaAs nanocluster on silicon in the absorption range from 410 nm to 980 nm are 0.69 and 0.637 at wavelengths of 600 nm and 810 nm, respectively. Thus, our findings allow us to use this nanostructure as an active element of solar energy converters and as a material for electronic communication technology. Keywords: nanostructure; gallium arsenide; silicon matrix; heterostructure; quantum efficiency; 1. Introduction A layer of GaAs/Si heterostructure deposited by the plasma method is a quasi-periodic nanostructure clusters that can increase the external quantum efficiency when applied in various spectral transformations. The results of the study of electron microscopes show that dense and translucent particles are observed at the edges of dense aggregates of samples. Gallium arsenide nanostructures on a silicon wafer are dense aggregates of particles ranging in size from 30–50 nm to 70 nm. Along the edge of a dense aggregate are particles ranging in size from 30–50 nm to 70 nm GaAs, Ga, As. In our case, during plasma deposition of gallium arsenide onto a silicon wafer, nanostructures appear in the form of aggregates during the deposition process, a matte surface appears. In their work, Vozmilova L. N., Maljarova V. G., to create a matted (rough) gallium arsenide surface in electronics, in order to increase the external quantum efficiency of LED radiation and the adhesion of metal contact layers, an etchant containing nitric acid was specially used. A group of scientists, A. Suchkova, S. Kovachev and I. Bogdanov studied the structural and chemical nature of layers obtained by electrochemical etching with simultaneous electrodeposition of GaAs n-type. They proposed a qualitative model to explain the behavior of a porous layer on the surface of n-GaAs (111) and octahedral crystals of As2O3 during electrochemical processing, based on the decomposition of binary semiconductors in contact with electrolytes. The paper shows that the formation of ordered crystallites refers to the phenomenon of self-assembly. In our work, during plasma deposition of gallium arsenide on silicon, the EDS spectrum shows atomic concentrations consist of Ga-58.64 and As-41.36, and the weight concentrations is 60.37:39.63. In the article, scientists Ilio Miccoli, Paola Prete, and Nico Lovergine report on the evolution of the shape, size, and mechanisms of the formation of GaAs nanostructures grown at 400 °C on stabilized As (111)Si by metal-organic vapor phase epitaxy. According to their work, at the initial stage of growth, the GaAs structure crystallizes in the zinc blende phase. The applied precipitation-diffusion-aggregation (DDA) nucleation model estimates the effective coefficient of reactive adhesion of Me3Ga to GaAs. Nanoislands of gallium arsenide on the silicon surface in the direction (111) obtained by the method of organometallic vapor phase epitaxy create the appearance of truncated hexagonal pyramids. During our experiment, an image was observed as in Figure 1. Figure 1 shows the obtained AFM image of the GaAs on Si (111) by the plasma method. AFM images consist of parallel planes the GaAs, where the field sizes are 10x10x35 microns. Figure 1. AFM image of the surface of gallium arsenide obtained by the plasma method. A high-temporal position-sensitive detector (PCD) developed by Russian scientists with a gallium arsenide photocathode, the quantum efficiency of which reaches a maximum of 48% at a sensitivity range from 350 to 900 nm , this work represents a biplanar with a gallium arsenide photocathode and a multi-element collector. Within these limits of electromagnetic radiation, the maximum quantum efficiency of the gallium arsenide matrix on silicon deposited by plasma methods is 69%. The main positive features of the developed device are its increased quantum efficiency and higher spatial resolution. In this case, applying a strong electrostatic field to the gallium arsenide photocathode further increased its sensitivity. Activation of GaAs with a stronger material such as Cs2Te exhibits polarization comparable to that of Cs-O and increases lifetime due to the strength of the Cs2Te layer. However, previously reported photocathodes based on Cs-Te activation on GaAs have 10 times lower quantum efficiency (QE) compared to those activated with conventional Cs-O activation. Illumination of the photocathode with circularly polarized light with an energy slightly above the band gap of GaAs results in the photoemission of a spin-polarized electron beam. Activation with Cs-Te showed little NEA with a typical QE of about 6.6% under 532 nm laser illumination. Activation with Cs-O-Te showed a significant NEA with a typical QE of about 8.8% at 532 nm laser illumination and about 4.5% at 780 nm laser illumination [5-7]. In these studies, GaAs is activated by Cs-O, Cs-Te, Cs-O-Te, which, when illuminated, leads to the photoemission of a spin-polarized electron beam. Wei Liu and colleagues state that a requirement for efficient photoemission is that GaAs be p-type doped, which serves to lower the Fermi level throughout the material [8, 9]. We have obtained aggregates from particles with a size of 50-70 nm As syn, which decay into electrons and atoms of germanium and selenium, generating a certain amount of positive arsenide ions on the GaAs/Si matrix. GaAs/Si nanolayers, under the selected optimal conditions obtained by the plasma deposition method, when observed with a scanning electron microscope, show the formation of tightly adjoining nanocluster layers consisting of Ga, As in ratios approximately equal to 1:1.3. The microdiffraction pattern obtained by an electron microscope is represented by a large set of reflections corresponding to a mixture of phases: δ- Ga(JCPDS, 27-223), GaAs(JCPDS, 32-389), As(JCPDS, 26-116). The deposited nanostructured phases are of the following type: As syn, GaAs is also gallium-67 with a half-life of 3.3 days, which is a gamma-emitting isotope — gamma radiation emitted immediately after electron capture, commonly referred to as a gallium scan. This gallium isotope is used as a free Ga3+ ion. Zhuravleva L.M., Ivashevsky M.R., Muzafarov I.F., show how by changing the isotopic composition of a material, for example, gallium arsenide, one can choose the location of energy subbands in quantum wells and the width of energy gaps in superlattices for designing new semiconductors. This occurs due to changes in the effective electron mass mef and the band gap Eg of the material in quantum wells. Electron microscope observations of the resulting matrix during the deposition of gallium arsenide on silicon illustrate the different isotopic compositions of the gallium arsenide compound: δ-Ga and As syn. On the basis of gallium arsenide plates grown by the epitaxial method, detectors were fabricated by various authors and subsequently various physical parameters were determined on them. The scientists of the center conducted research on the choice of the optimal mode to improve the resolution, and during this process the quantum efficiencies of the plates were determined. Of the 40 µm, 70-100 µm and 400 µm thick plates, the thinnest has the highest X-ray absorption efficiency. Measurements of the quantum efficiency of plasma deposition matrices show that in the spectral range from 410 nm to 980 nm, the maximum value is 0.69. By studying superlattice gallium arsenide photocathodes, Japanese scientists have achieved an electron spin polarization (ESP) of more than 70%. At a laser wavelength of 778 nm, the quantum efficiency reached 0.5%. In this paper, we consider a comprehensive study of gallium arsenide nanostructure clusters obtained by plasma deposition on a silicon wafer, methods of a quantum efficiency measurement system, an electron microscope, SEM, and AFM. Nanostructure analyses and a description of the quantum efficiency spectrum QE depending on the frequency range are proposed. 2. Materials and experiments In electronic communication and based on photoelectronic effects technologies, the main layer of the heterostructure is gallium arsenide. The cross section of the GaAs/Si matrix obtained by the plasma method as a result of the selected various optimal modes of the plasma-beam device (PBC) using the working gas of argon is a peculiar form. Figure 2 shows a cross section of a GaAs structure on a Si wafer. Figure 2. Cross section of the GaAs/Si matrix obtained by the plasma method As a result of linear analysis and mapping, it was revealed that the deposited GaAs layer has a uniform distribution over the entire Si surface, and the ratio of its elements varies depending on the deposition mode and conditions. Thus, the growth of the gallium arsenide film occurs with the preservation of its structure. In the state chosen by us plasma energies: 500 eV at the exposure time of 90 minutes, the Ga:As ratios in atomic concentrations consist Ga-58.64 and As- 41.36, and the weight concentrations is 60.37:39.63. As the plasma energy increases, the concentration ratio of Ga to As decreases. At the same time, it should be noted that, according to the obtained data of energy dispersive analysis, there are no foreign elements in the selected regimes of GaAs deposition on Si. The profiles in the image are shown in Figure 3. SE-BSE x300 SE x300 BSE x300 SE-BSE x1500 SE x1500 BSE x1500 SE-BSE x4000 SE x4000 BSE x4000 Ga As Si  Bse Bse Overlay EDS spectrum Elemental analysis mode 27-90-500 Spectrum name Ga As Sum Mass% 57.18 42.82 100.00 Spectrum name Ga As Sum At. % 58.93 41.07 100.00 Figure 3. SEM images of the morphology and elemental composition of Sample (27-90-500) (temperature Si-27°C; duration of exposure-90 minutes; energy of argon ions: 500 eV) We chose two plasma-deposited GaAs/Si matrices and examined them with an EM-126K electron microscope using transmission imaging with microdiffraction. The matrices were obtained at a duration of plasma beam exposure to GaAs for 1 hour and 2 hours, with an ion energy of 1 keV; and the Si temperature is 27°C in the PPR mode using argon working gas. A hot gelatin solution was used to remove the GaAs layer deposited on the silicon base. After drying, the gelatin drop was dissolved in hot distilled water, and small pieces of the separated sample were caught on a palladium-bath mesh-substrate. Based on our observations, it has been established that, at the edges of these dense particles, there are translucent films and dense particles, the microdiffraction pattern from which is represented by a large set of reflections corresponding to a mixture of phases: δ-Ga(JCPDS, 27- 223), GaAs(JCPDS, 32-389), As(JCPDS, 26-116). These are dense aggregates with signs of faceting in the form of single crystals. Along the edges of these dense particles are semitransparent films and dense particles, the microdiffraction pattern of which is represented by a large set of reflections corresponding to a mixture of phases: δ-Ga(JCPDS, 27-223), GaAs(JCPDS, 32-389), As(JCPDS, 26 -116). Table 1 shows the interplanar distances of nanoparticles of matrix No. 1 of the listed phase states. Gallium-67 (half-life 3.3 days) is a gamma-emitting isotope emitted shortly after electron capture, gamma radiation used in standard nuclear medical imaging in procedures commonly referred to as gallium scanning. This isotope is used as a free Ga3+ ion. It is the longest-lived radioisotope of gallium. Figure 4 shows a section of the matrix No. 2, with a duration of 2 hours of plasma exposure. This is an aggregate of particles with a size of 50-70 nm. Table 1. Interplanar distances of matrix nanoparticles No. 1 Conventional Calculated Conventiona Calculated Conventiona Calculated true valuesδ- values l true values l true values Ga (JCPDS, valuesGaAs valuesAs(JC 27-223) (JCPDS, 32- PDS, 26- 389) 116) 2,64 2,6 3,26 3,28 3,18 3,16 2,56 2,54 2,0 1,99 3,08 2,37 1,7 3,01 3,03 2,27 2,27 1,41 2,83 2,84 2,11 2,15 1,3 2,52 2,01 1,15 1,11 2,25 1,92 1,9 1,09 1,09 2,12 2,15 1,0 1,6 1,62 The microdiffraction pattern contains two diffuse rings, indicating the homogeneity of the particles composed of GaAs, and there are separate reflections that correspond to As syn (JCPDS, 5-632). Table 2 illustrates the correspondence between the tabulated and calculated values of the interplanar distances of As syn nanoparticles of matrix No. 2 when mapping with an electron microscope. Figure 4. 24000x image of sample No. 2. Aggregates of particles ranging in size from 50-70 nm As syn. Table 2. Interplanar distances of As syn nanoparticles of matrix No. 2 when mapping with an electron microscope. Conventiona Calculatedvalue l true s valuesAssyn (5-632) 3,52 3,53-3,49 2,77 2,05 2,04-2,01 1,88 1,91 1,77 1,76 1,56 1,51 1,2 Samples were taken at one x24000 magnification. Clusters distant from the bulk sample are dense aggregates of particles ranging in size from 30–50 nm to 70 nm. Figure 5 shows a dense aggregate of sample No. 2, along the edges of which dense and translucent particles ranging in size from 30÷50 nm to 70 nm GaAs, Ga, As are observed. It is possible to use the resulting GaAs nanostructure, consisting of translucent particles ranging in size from 30 ÷ 50 nm to 70 nm GaAs, Ga, As, as an active element of solar cells, which improves the absorption capacity of the device, as shown, coating with films of ZnO nanoparticles imparts transparency to gallium arsenide, thereby improving the necessary characteristics of the manufactured device [14-17]. The microdiffraction pattern is characterized by a large set of reflections, which shows the inhomogeneity of the composition, i.e. is a mixture of phases. For decryption, JCPDS tables (USA, 1987) were used for 8 lines (see table 3). According to the comparison results, there are phases: GaAs(JCPDS, 32-389), Ga(JCPDS, 31-589), As(JCPDS, 26-116). Table 3 identification of the value of the nanostructure cluster composition available in the second sample. Table 3. Interplanar distances of sample No. 2 Conventional Calculated Conventional Calculated Conventional Calculated true values values true values values true values values GaAs(32-389) Ga(31-539) As(26-1163) 3,26 3,28 2,43 2,43 3,18 3,18 2,0 1,99 2,1 2,12 3,08 1,7 1,73 1,88 1,87 3,01 1,41 1,43 1,59 1,64 2,83 2,84 1,15 1,32 1,33 1,34 2,52 1,09 1,09 1,17 2,25 1,0 1,0 0,97 1,0 2,12 2,12 0,81 1,6 1,64 Comparisons, identification of tabulated values, and relative intensities of the diffractograms of the observed samples show that the composition of the nanostructure cluster is more intense in the second sample. It is assumed in the case of sample No. 1 that the applied layer is probably much thinner than in sample No. 2. 3.Result and discussion The tabular data shows the structure of the second sample where gallium arsenide GaAs, δ-Ga, As syn are present on the GaAs/Si matrix during plasma deposition. To obtain δ-Ga, various methods have been proposed by different scientists. The method of ion- exchange leaching [18, 19] is used to extract Ga from GaAs scrap, which provides a new approach to the complex use of this material. Using the method of chemical vapor deposition at reduced pressure on a Si wafer, atomic layer doping of arsenic was performed. In this case, the arsenic layer is doped at a certain temperature range with an AsH3 compound. A microcrystalline cluster of gallium arsenide (GaAs) 2.5 to 60 nm in size was grown on amorphous silicon using the molecular beam epitaxy method. The researchers of this work identify factors that limit the luminescent quantum efficiency of the crystal. The presence of terminating oxide phases and the presence of surface oxides in a cluster are factors that reduce the optical properties of GaAs clusters. Nanoscale crystalline GaAs clusters were obtained by scientists in two ways: 1. Nanoscale crystalline GaAs clusters were obtained by vapor-phase synthesis as a result of homogeneous nucleation of nonequilibrium vapor in the size mode of 5–10 nm. 2. Homogeneous nucleation in the range of 10–20 nm in the vapor phase from organometallic precursors [22, 23]. According to researchers on the optical characteristics of GaAs clusters of homogeneous nucleation, quantum effects are expected to be limited. At the same time, GaAs clusters formed from aerosols consist of well-faceted single-crystal GaAs particles. Electrons with a certain energy range excited in the photocathode conduction band can easily escape into vacuum. This allows the GaAs photocathode to have a high quantum efficiency (QE), that is, the number of emitted electrons per incident photon when illuminated with all photon energies exceeding their band gap. We studied the effect of time on the formation of the gallium arsenide nanostructure, its spatial arrangement, cluster morphology, and dependence of the quantum efficiency in the irradiated range. Analyzing the results of an electron microscope with a magnification of 24000x, in figure 3-5, we have shown the identity of the elements with respect to mapping, the sizes and distribution of elements on clusters of the gallium arsenide nanostructure. From the measurements shown in Table 4, as a function of quantum efficiency versus wavelength, we found that there are two extremes. In function of the quantum efficiency depending of the wavelength, we found that there are two extremes. The maximum values equal, QE = 0.69 and QE = 0.637 are taken at the corresponding wavelengths WL = 600 nm and WL = 810 nm. The characteristic curve of quantum efficiency on wavelengths QE(WL) is illustrated in Figure 5. Table 4 Dependence of the quantum efficiency on the wavelengths of the GaAs nanostructure QE(WL) sample No. 2. WLnm QE 700 2,77E-01 410 5,36E-02 710 2,76E-01 420 1,18E-01 720 7,76E-02 430 l,78E-01 730 6,17E-02 440 3,39E-01 740 2,30E-01 450 l,53E-01 750 2,96E-01 460 4,57E-01 760 2,23E-01 770 3,21E-02 470 9,58E-02 780 3,70E-01 480 3,73E-01 790 l,12E-01 490 1,59E-01 800 2,57E-01 500 2,06E-01 810 6,35E-01 510 l,31E-01 820 2,43E-01 520 1,74E-01 830 6,11E-02 530 3,46E-01 540 2,44E-01 840 1,56E-01 550 850 3,86E-01 2,58E-01 860 1,92E-01 560 5,33E-01 570 8,32E-02 870 8,48E-02 580 880 5,19E-02 5,08E-02 890 4,39E-02 590 2,69E-01 600 900 5,50E-02 6,88E-01 610 910 5,11E-02 4,09E-01 620 920 3,17E-02 3,26E-01 930 2,02E-01 630 4,40E-01 640 4,73E-01 940 l,13E-01 650 2,87E-01 950 9,24E-02 660 3,18E-01 960 l,30E-01 670 2,21E-01 970 1,02E-01 680 1,21E-01 980 4,10E-02 690 2,86E-01  QE 8.00E-01 7.00E-01 6.00E-01 5.00E-01 4.00E-01 QE 3.00E-01 2.00E-01 1.00E-01 0.00E+00 0 200 400 600 800 1000 1200 Figure 5. Quantum Efficiency versus Wavelength Graph of GaAs QE(WL) Nanostructure When analyzing the quantum efficiency of the GaAs/Si nanostructure observed by the SCS10- Film quantum efficiency measurement system for testing thin-film solar cells, it becomes obvious that the heterostructure layer obtained by the plasma method is one of the methods with a controlled composition of matrices in the development of nanodevices. Measurements of the quantum efficiency of plasma deposition matrices show that in the spectral range from 400 nm to 920 nm the maximum value is 0.69. Figures 2-4 shows dense aggregates of the selected samples, along the edges of which dense and translucent particles are observed. The sizes of GaAs, Ga, As nanoparticles range from 30-50 nm to 70 nm. It can be observed that gallium arsenide nanostructures are located on the silicon surface with a size of up to 70 nm and a distance between them of approximately 20 nm. In the plasma state, we observed the decomposition of gallium arsenide into Ga and As atoms, and the formation of a compound on the silicon surface. The microdiffraction pattern from which is represented by a large set of reflections corresponding to a mixture of phases: δ-Ga(JCPDS, 27-223), GaAs(JCPDS, 32-389), As(JCPDS, 26-116). In the first case, a gallium-67 atom with a half-life of 3.3 days, which is a gamma- emitting isotope - gamma radiation emitted immediately after electron capture, scanning gallium, applied as a free Ga3+ ion. In the second case, an aggregate of particles with a size of 50-70 nm. The microdiffraction pattern contains two diffuse rings, which shows the uniform ordering of particles composed of GaAs. And in the third, there are separate aggregates that correspond to As syn(JCPDS, 5-632) particles ranging in size from 50-70 nm, which decay into electrons and atoms of germanium and selenium, generating a certain amount of positive arsenide ions on the GaAs/Si matrix. Direct-gap GaAs nanostructure on silicon in the absorption range from 410 nm to 980 nm, the maximum values of the quantum efficiency of which are 0.69 and 0.637 at wavelengths of 600 nm and 810 nm, respectively. Following the above observations, we know that GaAs/Si cluster nanostructures can contain the incident electromagnetic field and scatter it into the lower layer. And use the bottom layer as a concentrator for absorbing sunlight. 4. Conclusion Summarizing the above, we can conclude that gallium arsenide nanoclusters deposited by the plasma method on a silicon wafer at a stoichiometric ratio of the structure of 1:1.3 are different depending on the deposition time. In both cases, the atoms of the deposited material are ordered, and there are no "foreign" elements that lead to a violation of the structure. GaAs were studied using a scanning microscope and energy-dispersive spectral analysis (EMF). To obtain a uniform mass flow (spraying) of GaAs and remove the oxide film from the target surface, preliminary spraying was carried out for 3 minutes. The phase composition of GaAs on the matrix was determined using X-ray phase analysis, its results are shown on the diffractograms of samples. The analysis of the SEM image of the surface relief was carried out using a program that allows tracing the image of the surface relief. The structure of the thin surface region of the samples was studied by fast electron diffraction. The maximum values of the quantum efficiency of the plasma-deposited GaAs nanocluster on silicon in the absorption range from 410 nm to 980 nm are 0.69 and 0.637 at wavelengths of 600 nm and 810 nm, respectively. In the future, we will continue experiments for a detailed assessment of the crystal quality and its effect on the characteristics of quantum efficiency, including measuring the dependence of the maximum QE on the thickness of the gallium arsenide nanolayer. Acknowledgments: The names of funding organization: Abai Kazakh National Pedagogical University; Author contributions: Author Iskakova Kulpash Conceptualization √ Data curation √ Formal Analysis √ Funding acquisition √ Investigation √ Methodology √ Resources √ Visualization √ Writing – original draft √ Writing – review & editing √ The author(s) declared no potential conflicts of interest with respect to the research, authorship, and/or publication of this article. Data and code availability: All data from the article is presented in the main text. Supplementary information: All data is explained in detail in the main text. Ethical approval: No experiments have been conducted with human tissue. ORCID iD https://orcid.org/0000-0002-5833-9205 References Vozmilova L.N., Maljarova V.G., Abstract of invention, Gallium Arsenide Etchant. Russian Agency for patents and Trademarks, 1996 Yana Suchikova, Sergii Kovachov and Ihor Bohdanov, Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition. Nanomaterials and Nanotechnology 2022; V 12: 1–22. Ilio Miccoli, Paola Prete, and Nico Lovergine, Shape, Size Evolution, and Nucleation Mechanisms of GaAs Nanoislands Grown on (111)Si by Low-Temperature Metal–Organic Vapor-Phase Epitaxy. Cryst. Growth Des. 2019, 19, 10, 5523–5530. V. G. Debur, G. M. Beskin, S. V. Karpov, V. L. Plokhotnichenko, A. S. Terekhov, S. S. Kosolobov, G. E. Shaibler, High Temporal Resolution Position-sensitive detector With Gallium- Arsenide Photocathode,Astrophysical Bulletin,V 64, № 4, 2009. Jyoti Biswas, Erdong Wang, Mengjia Gaowei, Wei Liu, Omer Rahman, Jerzy T. Sadowski, High quantumefficiency GaAs photocathodes activated with Cs, O2, and Te, AIP Advances, N. 11, 025321 (2021); doi: 10.1063/5.0026839  A. G. Zhuravlev, A. S. Romanov, and V. L. Alperovich, Photon-enhanced thermionic emission from p-GaAs with nonequilibrium Cs overlayers, Applied Physics Letters 105, 2014 T. Maruyama, D.-A.Luh, A. Brachmann, J. E. Clendenin, E. L. Garwin, S. Harvey, J. Jiang, R. E. Kirby, and C. Y. Prescott, Systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes, Appl. Phys. Lett.85, N 13, 2004. Wei Liu,Yiqiao Chen, Wentao Lu, Aaron Moy, Matthew Poelker, Marcy Stutzman, Shukui Zhang, Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector, Applied Physics Letters, 109, 252104 (2016) Wei Liu, Yiqiao Chen, Wentao Lu, Aaron Moy, Matthew Poelker, Marcy Stutzman, Shukui Zhang, A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes, Journal Of Applied Physics 122, 2017 Iskakova Kulpash, Plasma Deposition of Gallium Arsenide Nano clusters on a Silicon Matrix, Journal of Nanomaterials, Volume 2022, Article ID 3767355, Zhuravleva L.M., Ivashevsky M.R., Muzafarov I.F., New Materials in Optoelectronics, World of Transport, V 16, № 2, pp 74–83, 2018 C. Erd, A. Owens, G. Brammertz, D. Lum, M. Bavdaz, A. Peacock, S. Nenonen, H. Andersson, Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes, Journal of Applied Physics, 97, 094907 (2005); https://doi.org/10.1063/1.1886888 T. Nishitani, T. Nakanishi, M. Yamamoto, S. Okumi, F. Furuta, M. Miyamoto, M. Kuwahara, N. Yamamoto, K. Naniwa, O. Watanabe, Y. Takeda, H. Kobayakawa, Y. Takashima, H. Horinaka, T. Matsuyama, K. Togawa, T. Saka, M. Tawada, T. Omori, Y. Kurihara, M. Yoshioka, K. Kato, T. Baba, Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGa Asstrained-layer superlattice photocathodes, J. Appl. Phys. 97, 2005 Yangsen Kang, Dong Liang, SaahilMehra, YijieHuo, Yusi Chen, Mark G. Christoforo, Alberto Salleo, and James S. Harris, Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers, Journal of Nanomaterials Volume 2015, Article ID 263734, 6 pages http://dx.doi.org/10.1155/2015/263734 Fateh A. Chaudhry, Lorena Escandell, Eduardo López-Fraguas, Ricardo Vergaz, José Manuel Sánchez-Pena & Braulio García-Cámara, Light absorption enhancement in thin film GaAs solar cells using dielectric nanoparticles, Scientific Reports, volume 12, Article number: 9240 (2022) Keisuke Nakayama, Katsuaki Tanabe, and Harry A. Atwater, Plasmonic nanoparticle enhanced light absorption in GaAs solar cells, Applied Physics Letters 93, 121904 2008 Kulpash Iskakova, Rif Akhmaltdinov, Nickel oxide nanoparticles on the surface of the gallium arsenide nanocluster structure, Nanomaterials and Energy, Volume 8 Issue 2, December 2019, pp. 201-204 Tsai-Hsin Cheng, Chia-Ju Liu, Tang-Yi Tsai and Yun-HweiShen, A Process for the Recovery of Gallium from Gallium Arsenide Scrap, Processes 2019, 7, 921 F. Stern, Heterojunctions and Semiconductor Superlattices,Proceedings of the Winter School Les Houches, France, March 12–21, 1985, pp 38–47 Yuji Yamamoto, Rainer Kurps,Junichi Murota, Bernd Tillack, Arsenic atomic layer doping in Si using AsH3,Solid-State Electronics, Volume 110, 2015, pp 29-34 C. J. Sandroff, J. P. Harbison, R. Ramesh, M. J. Andrejco, M. S. Hegde, D. M. Hwang, C. C. Chang, E. M. Vogel, GaAs Clusters in the Quantum Size Regime: Growthon High Surface Area Silica by Molecular Beam Epitaxy, Science, Vol. 245, pp 391-393 Winston A. Saunders, Peter C. Sercel, Harry A. Atwater, and Kerry J. Vahala, Vapor phase synthesis of crystalline nanometer-scale GaAs clusters, Appl. Phys. Lett. 60(8), 950 (1992) Peter C. Sercel, Winston A. Saunders, Harry A. Atwater, and Kerry J. Vahala, Nanometer- scale GaAs clusters from organometallic precursors, Appl. Phys. Lett. 61 (6), pp 696-698, 1992 Declaration of Interest Statement Declaration of interests ☐The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. ☒The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Iskakova Kulpash reports administrative support was provided by Abai Kazakh National Pedagogical University. Iskakova Kulpash reports a relationship with Abai Kazakh National Pedagogical University that includes: employment.