ELEN 012 Course Outline PDF

ELEN 012 template by @adrenaliane notes by Janice Christel DCpET 2-1 | 1st Sem | A.Y. 2024-2025 COURSE OUTLINE...

ELEN 012 template by @adrenaliane notes by Janice Christel DCpET 2-1 | 1st Sem | A.Y. 2024-2025 COURSE OUTLINE ★ 1904: John Ambrose Fleming invented the diode, the first electronic device to I. Introduction: History and amplify a signal Development of Electronics II. Basic Electronics and Electrical Testing Instrument and Device A. VOMorMultimeter B. Oscilloscope III. Diodes A. IdealDiode Fleming Diode B. TypesofMaterials C. Ionization ★ 1906: Lee De Forest invented the triode, D. SemiconductorDiode+ a most powerful amplifier that could be Characteristics used to amplify radio signals E. ComputationPart: Load-LineAnalysis DiodeinParallelCircuits Clippers F. DiodeChecking Lee De Forest Triode 1.0 INTRODUCTION RISE OF RADIO History and Development of Electronics ★ invention of triode led to the development of radio broadcasting in 1920s Electronics ★ radio became a popular form of ➔ branch of physics and engineering that entertainment and communication, deals with the flow of electrons in and it helped to drive the growth of materials encompasses the study and electronics industry ➔ design of electronic components, circuits, and systems history of WORLD WAR II electronics can be traced back to the ★ the development of radar, sonar, and ★ discovery of electricity in the 17th other electronic warfare system led to century, but it wasn’t until the late 19th significant advances in electronics century that the field of electronics was technology, including the development formally established of transistor EARLY DEVELOPMENTS ★ 1897: J.J. Thomson discovered the electron, paving the way for the development of electronic devices First Transistor J.J. Thomson, 1915 Page 1 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] THE TRANSISTOR ERA THE FUTURE OF ELECTRONICS ★ 1947: John Bardeen, Walter Brattain, ★ Likely to be driven by continued and William Shockley invention of miniaturization, as well as the transistor transistors are much smaller development of new materials and ★ and e cient than vacuum tubes, and technology they can be used to build a wide variety of electronic devices John Bardeen, Walter Brattain, and William Shockley THE INTEGRATED CIRCUIT ★ 1950s and 1960s: development of integrated circuits led to the miniaturization of electronic devices ★ integrated circuits, or ICs, are tiny chips that contain thousands or even millions of transistors can be used to build a ★ wide variety of electronic devices, including computers, televisions, and radios First IC Example of IC THE DIGITAL AGE ★ 1970-1980s: introduction of personal computers ★ PC revolutionized the way people work, communicate, and entertain themselves Page 2 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] 2.0 INSTRUMENTATION PARTS OF AN ANALOG MULTIMETER Basic Electronics and Electrical Testing Instrument and Design VOLT-OHM-MILLIAMETER (VOM) or MULTIMETER ➔ an electrical measuring instrument that can be used to measure voltage, current, and resistance TYPES OF MULTIMETER 1. IndicatorZeroConnector 2. IndicatorPointer 1. Analog 3. IndicatorScale ➔ moves a needle along a scale; 4. ContinuityIndicatingLED function can be changed by 5. RangeSelectorSwitchKnob switching the dial 6. Zero-OhmsAdjustmentKnob 7. MeasuringTerminal+ 8. MeasuringTerminal- 9. SeriesTerminalCapacitorOutput 10. Panel 11. RearCase ANALOG VOM READING 2. Digital ➔ data is shown directly in the digital format on the LCD display; has a dial to select its function SELECTOR SWITCH/RANGE ACV (AC Voltage) ○ 1000,250,50and10 DCV (DC Voltage) ○ 1000,250,50,10,2.5,0.5and 0.25 DCmA (DC Current) ○ 0.25A,25mA,2.5mAand100µA Ohms (Resistance) ○ X10K,x1K,x10andx1 Page 3 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] EXAMPLE READING AC VOLTAGE OSCILLOSCOPE MEASUREMENT ➔ an electronic instrument used to visualize and measure varying signal voltages over time displays waveform (typically a graph of voltage on the ★ ADDITIONAL INFO! vertical axis and time on the horizontal axis) and allows user to observe the Voltmeter: Voltage (V) shape, amplitude, frequency, and other VAC characteristics of electric signal ➔ Source, Outlet ➔ Symbol: TYPES OF WAVEFORM 1. Sine Wave 2. Square Wave 3. Triangular Wave 4. Sawtooth Wave 5. Pulse Wave VDC 6. Ramp Wave ➔ Power Supply, Battery 7. Exponential Wave ➔ Symbol: 8. Noise Waveforms Ohmmeter: Resistance (Ω) ➔ for continuity testing ➔ power o Ammeter: Current (A) ➔ measure and express the intensity of the current Page 4 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] 3.0 DIODES The ideal diode, therefore, is a short circuit for the region of conduction 𝑉𝑓 0𝑉 Diodes 2 (shortcircuit) 𝑅=𝑓 𝐼𝑓 = , 3 , 𝑚 𝐴 ,... 𝑜 𝑟 𝑎 𝑛 𝑦 𝑝=𝑜 0 𝑠 𝑖Ω 𝑡𝑖𝑣𝑒 𝑣𝑎𝑙𝑢𝑒 ➔ simplest of semiconductor devices but plays a very vital role in electronic The ideal diode, therefore, is an open systems an electronic component that circuit in the region of non-conduction ➔ controls the flow of electricity in one direction have characteristics that 𝑉𝑅 −5𝑉, −20𝑉, 𝑜𝑟 𝑎𝑛𝑦 𝑟𝑒𝑣𝑒𝑟𝑠𝑒−𝑏𝑖𝑎𝑠 𝑝𝑜𝑡𝑒𝑛𝑡𝑖 ➔ closely match those of simple switch 𝑅= 𝑅 𝐼𝑅 = (opencircuit) 0𝑚𝐴 =∞Ω TYPE OF MATERIALS Ideal Diodes CONDUCTORS ➔ can easily facilitate the flow or ➔ a two-terminal device having symbol and characteristics: movement of electrons ➔ have below 4 valence electrons example: copper, silver, gold INSULATORS ➔ cannot easily facilitate the flow of electrons ➔ have valence electrons more than 4 example: paper, mica, porcelain SEMICONDUCTOR MATERIALS prefix semi is normally applied to range of levels midway between two limit s ➔ has conductivity level somewhere between extremes of an insulator and cond uctor ➔ have valence electrons of 4 example: Silicon (Si) and Germanium (Ge) INTRINSIC MATERIALS ➔ combined to the atoms of the same element idealreferstoanydeviceorsystem ➔ semiconductors that have been that has ideal characteristics—perfect carefully refined to reduce the in every way impurities low to a very level-essentially as pure as can be CHARACTERISTICS made available through modern The characteristics of an ideal diode are those technology of a switch that can conduct current in only EXTRINSIC MATERIALS one direction ➔ semiconductor material that has been subjected to the doping process Page 5 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] n-TYPE MATERIAL there will be no electron flow ➔ created by introducing those impurity after wards elements that have five valence electrons (pentavalent) antimony, FORWARD-BIAS CONDITION ( >0𝑉) arsenic, phosphorous donor atom - “on”condition di used impurities with five valence electrons 𝑉𝐷 established by applying the positive potential to the p-type material and the negative potential to the n-type p-TYPE MATERIAL material (forcing an electron to flow) ➔ formed by doping a pure germanium or silicon crystal with impurity atoms SEMICONDUCTOR DIODE having three valence electrons (trivalent) CHARACTERISTICS boron,gallium,indium Silicon VS Germanium acceptor atoms - di used impurities with three valence electrons 𝑉𝑇= 0. 7 𝑉 ( 𝑆 𝑖 ) ★ IONIZATION 𝑉𝑇= 0. 3 𝑉 ( 𝐺 𝑒 ) RESISTANCE LEVELS ➔ process in which an atom or 𝑉𝐷 molecule acquires a positive charge 𝑅𝐷 = 𝐼𝐷 (by losing electrons) or negative charge (by gaining electrons) ★ Problem #1 Problem: Determine the dc resistance levels for the diode for the figure: SEMICONDUCTOR DIODE ➔ formed by bringing these materials together the n-Type and p-Type materials (constructed from the same base—Ge or Si) ➔ a two-terminal electronic component consisting of Cathode (K) and Anode (A) Depletion Region - region of uncovered positive and negative ions NO APPLIED BIAS ( =0𝑉) (a) ID = 2 mA nosupplyatall (b) ID = 20 mA 𝑉𝐷 net flow of charge in any one direction (c) VD = -10 V for a semiconductor diode is zero Solutions: (a) 𝐼 𝐷= 𝐼𝐷 𝐼 𝑂 𝐷=𝐸 𝐶 𝑢 𝑟 𝑟 𝑒 𝑛 𝑡 𝑜 𝑓 𝐷 𝑖 𝑜 𝑑 𝑒 𝑉𝐷 0. REVERSE-BIAS CONDITION ( < 0 𝑉 ) (b) 5 𝑅𝐷 = 𝐼𝐷 = = 250Ω 𝑉 reversesaturationcurrent( 𝐷 𝐼)-the 𝑉𝐷 0. 8 𝑉 𝑉 (c) 2 currentthatexistsunderreverse-bias 𝑅𝐷 = 𝐼𝐷 = 2𝐴 𝑚 0 𝑚= 𝐴 40Ω 𝑆 𝑉𝐷 −10 𝑉 conditions 1 µ𝐴 𝑅 = 𝐷 𝐼𝐷 = = 10𝑀Ω Page 6 FUNDAMENTALS OF ELECTRICAL CIRCUITS | 💌 [email protected] LOAD LINE ANALYSIS DIODE CHECKING if the analysis is performed in a graphical manner, a line can be drawn on the characteristics of the device that represents the applied load the intersection of the load line with the characteristics will determine the point of operation of the system or 𝐸 −𝐷 − 𝑉 𝑅 𝑉= 0 𝐸 = 𝑉 𝐷 + 𝐼 𝐷𝑅 active region (amplification) Good: cut-o region (o ) FBlowresistance saturated region (on) RB∞(infinity) ★ Problem #2 Defective: Open: ○ FB∞ Problem: Determine IF and VR ○ RB∞ Shortened: ○ FB0Ω ○ RB0Ω(??) Leaky: ○ RB/FBhasreading/deflection When checking: KCL @ loop 1 Diode FB: E-VD-VR=0 - withlongresistancebutnotinfiniteor Given: E=5V 0 reading VD = 0.7V (Si) R = 1kΩ Diode RB: - infinitereading,not0oranyresistance Solution: value 5V-0.7V-VR=0 VR = 5V - 0.7V VR = 4.3V 𝑉𝑅 4.3𝑉 𝑅 𝐼𝐷 = 𝐼 𝑅 𝐵 = = 1 𝑘 Ω= 4.3 𝑚𝐴 Page 7