Lecture 4 MOSFETs & IGBTs Characteristics PDF

Power Electronics_EPE202: Mechatronics Program Lecture 4 Power MOSFETs and IGBTs and Characteristics Prof. Dr. Abdelsalam Ahmed Abdelsalam Electrical Power and Machines Engineering - Faculty of Engineering – Tanta Universi...

Power Electronics_EPE202: Mechatronics Program Lecture 4 Power MOSFETs and IGBTs and Characteristics Prof. Dr. Abdelsalam Ahmed Abdelsalam Electrical Power and Machines Engineering - Faculty of Engineering – Tanta University 2023-2024 1 Power MOSFETS A power MOSFET is a voltage-controlled device and requires only a small input current. The switching speed is very high and the switching times are of the order of nanoseconds. Power MOSFETs find increasing applications in low-power high-frequency converters. Power MOSFETs is relatively difficult to protect them under short-circuited fault conditions. The two types of MOSFETs are depletion MOSFETs and enhancement MOSFETs: 1- n-channel MOSFET 2- P-channel MOSFET Power MOSFETS n-channel depletion-type MOSFET  Questions Q1: For MOSFETs a) Explain, with figures of circuit diagram and the basic structure, the n-channel and p-channel depletion- type MOSFETs b) Explain, with figures of circuit diagram and the basic structure, the n-channel and p-channel enhanced- type MOSFETs c) Explain, with figures, the transfer characteristics of the n-channel and the p-channel depletion-type MOSFETs. d) Explain, with figures, the transfer characteristics of the n-channel and the p-channel enhanced-type MOSFETs e) Explain, with figures, the output characteristics of the n-channel enhanced-type MOSFETs showing the three regions of operations. f) True/false (correct the false statements): Power MOSFET is a current-controlled device and requires only a small input voltage. ( ) Switching speed in MOSFETs is medium and the switching times are of the order of seconds. ( ) Q2: For IGBTs a) Draw the equivalent circuit and its simplified circuit of the IGBT. b) Explain, with the figures, the typical output transfer characteristics of the IGBTs.