Summary

This document contains a series of multiple-choice questions related to electrical engineering concepts, including Kirchhoff's Current Law (KCL), nodal analysis, dependent sources, and diode characteristics. The questions cover topics like circuit analysis and semiconductor physics.

Full Transcript

---------- KCL is based on the fact that A: There is a possibility for a node to store energy. B: There cannot be an accumulation of charge at a node. C: Charge accumulation is possible at node D: Charge accumulation may or may not be possible. ---------- The algebraic sum of voltages around any clo...

---------- KCL is based on the fact that A: There is a possibility for a node to store energy. B: There cannot be an accumulation of charge at a node. C: Charge accumulation is possible at node D: Charge accumulation may or may not be possible. ---------- The algebraic sum of voltages around any closed path in a network is equal to A: Infinity B: 1 C: 0 D: Negative polarity ---------- Controlled sources are also known as A: Independent sources B: Dependent sources C: Ideal sources D: Voltage sources ---------- If there are 10 nodes in a circuit, how many equations do we get for nodal analysis? A: 10 B: 9 C: 8 D: 7 ---------- Dependent sources are _____________ types. A: 3 B: 2 C: 4 D: 1 ---------- Where voltage division problem arises A: Series connected resistors B: Parallel connected resistors C: When resistors are equal D: Both series and parallel resistors. ---------- Where current division problem arises A: Series connected resistors B: Parallel connected resistors C: When resistors are equal D: Both series and parallel resistors. ---------- The current passing through a circuit is 7.2A and the power at the terminals is 27 watts. Existence is ___________ ohms. A: 0.5402 B: 0.5208 C: 0.5972 D: 0.5792 ---------- If there are n nodes, then how many node-voltage equations are required? A: n B: n+1 C: n-1 D: 1 ---------- A supernode is between _____________ A: Essential node and reference node B: Two reference nodes C: Two essential nodes D: Essential node and neutral path ---------- There are 13 branches in a complicated network and nearly 8 nodes. How many equations are required to solve the circuit in node-voltage method? A: 7 B: 13 C: 5 D: 6 ---------- The loop which does not contain any other inner loop is known as ……. A: A node B: A mesh C: A branch D: A super mesh ---------- A Super Mesh analysis could be done when there is a common ………. between any two loops. A: Voltage source B: Current source C: Resistor D: Both voltage and current source ---------- If there are 16 branches and 5 essential nodes, how many equations are required to describe a circuit in mesh-current method? A: 12 B: 16 C: 21 D: 9 ---------- Which method is best for voltage sources? A: Mesh analysis B: Nodal analysis C: Superposition principle D: Differentiation method ---------- Which is the best-preferred method to calculate currents flowing in the circuit? A: Mesh-voltage analysis B: Node-current analysis C: Superposition principle D: Duality principle ---------- The most widely used semiconductive material in electronic devices is A: germanium B: carbon C: copper D: silicon ---------- The majority carriers in an n-type semiconductor are A: holes B: valence electrons C: conduction electrons D: protons ---------- Electron-hole pairs are produced by A: recombination B: thermal energy C: ionization D: doping ---------- The current in a semiconductor is produced by A: electrons only B: holes only C: negative ions D: both electrons and holes ---------- The process of adding an impurity to an intrinsic semiconductor is called A: doping B: recombination C: atomic modification D: ionization ---------- A pn junction is formed by A: the recombination of electrons and holes B: ionization C: the boundary of a p-type and an n-type material D: the collision of a proton and a neutron ---------- When a diode is forward-biased, A: the only current is hole current B: the only current is electron current C: the only current is produced by majority carriers D: the current is produced by both holes and electrons ---------- For a silicon diode, the value of the forward-bias voltage typically A: must be greater than 0.3 V B: must be greater than 0.7 V C: depends on the width of the depletion region D: depends on the concentration of majority carriers ---------- The average value of a half-wave rectified voltage with a peak value of 200 V is A: 63.7 V B: 127.2 V C: 141 V D: 0 V ---------- The average value of a full-wave rectified voltage with a peak value of 75 V is A: 53 V B: 47.8 V C: 37.5 V D: 23.9 V ----------

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