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This document contains a series of multiple-choice questions related to electrical engineering concepts, including Kirchhoff's Current Law (KCL), nodal analysis, dependent sources, and diode characteristics. The questions cover topics like circuit analysis and semiconductor physics.
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---------- KCL is based on the fact that A: There is a possibility for a node to store energy. B: There cannot be an accumulation of charge at a node. C: Charge accumulation is possible at node D: Charge accumulation may or may not be possible. ---------- The algebraic sum of voltages around any clo...
---------- KCL is based on the fact that A: There is a possibility for a node to store energy. B: There cannot be an accumulation of charge at a node. C: Charge accumulation is possible at node D: Charge accumulation may or may not be possible. ---------- The algebraic sum of voltages around any closed path in a network is equal to A: Infinity B: 1 C: 0 D: Negative polarity ---------- Controlled sources are also known as A: Independent sources B: Dependent sources C: Ideal sources D: Voltage sources ---------- If there are 10 nodes in a circuit, how many equations do we get for nodal analysis? A: 10 B: 9 C: 8 D: 7 ---------- Dependent sources are _____________ types. A: 3 B: 2 C: 4 D: 1 ---------- Where voltage division problem arises A: Series connected resistors B: Parallel connected resistors C: When resistors are equal D: Both series and parallel resistors. ---------- Where current division problem arises A: Series connected resistors B: Parallel connected resistors C: When resistors are equal D: Both series and parallel resistors. ---------- The current passing through a circuit is 7.2A and the power at the terminals is 27 watts. Existence is ___________ ohms. A: 0.5402 B: 0.5208 C: 0.5972 D: 0.5792 ---------- If there are n nodes, then how many node-voltage equations are required? A: n B: n+1 C: n-1 D: 1 ---------- A supernode is between _____________ A: Essential node and reference node B: Two reference nodes C: Two essential nodes D: Essential node and neutral path ---------- There are 13 branches in a complicated network and nearly 8 nodes. How many equations are required to solve the circuit in node-voltage method? A: 7 B: 13 C: 5 D: 6 ---------- The loop which does not contain any other inner loop is known as ……. A: A node B: A mesh C: A branch D: A super mesh ---------- A Super Mesh analysis could be done when there is a common ………. between any two loops. A: Voltage source B: Current source C: Resistor D: Both voltage and current source ---------- If there are 16 branches and 5 essential nodes, how many equations are required to describe a circuit in mesh-current method? A: 12 B: 16 C: 21 D: 9 ---------- Which method is best for voltage sources? A: Mesh analysis B: Nodal analysis C: Superposition principle D: Differentiation method ---------- Which is the best-preferred method to calculate currents flowing in the circuit? A: Mesh-voltage analysis B: Node-current analysis C: Superposition principle D: Duality principle ---------- The most widely used semiconductive material in electronic devices is A: germanium B: carbon C: copper D: silicon ---------- The majority carriers in an n-type semiconductor are A: holes B: valence electrons C: conduction electrons D: protons ---------- Electron-hole pairs are produced by A: recombination B: thermal energy C: ionization D: doping ---------- The current in a semiconductor is produced by A: electrons only B: holes only C: negative ions D: both electrons and holes ---------- The process of adding an impurity to an intrinsic semiconductor is called A: doping B: recombination C: atomic modification D: ionization ---------- A pn junction is formed by A: the recombination of electrons and holes B: ionization C: the boundary of a p-type and an n-type material D: the collision of a proton and a neutron ---------- When a diode is forward-biased, A: the only current is hole current B: the only current is electron current C: the only current is produced by majority carriers D: the current is produced by both holes and electrons ---------- For a silicon diode, the value of the forward-bias voltage typically A: must be greater than 0.3 V B: must be greater than 0.7 V C: depends on the width of the depletion region D: depends on the concentration of majority carriers ---------- The average value of a half-wave rectified voltage with a peak value of 200 V is A: 63.7 V B: 127.2 V C: 141 V D: 0 V ---------- The average value of a full-wave rectified voltage with a peak value of 75 V is A: 53 V B: 47.8 V C: 37.5 V D: 23.9 V ----------