Podcast
Questions and Answers
The UJT structure consists of a heavily doped p-type silicon bar.
The UJT structure consists of a heavily doped p-type silicon bar.
False (B)
The two end connections of the UJT are called base B1 and base B2.
The two end connections of the UJT are called base B1 and base B2.
True (A)
The UJT emitter forms a p–n junction with the bar.
The UJT emitter forms a p–n junction with the bar.
True (A)
The UJT can be reproduced, distributed, or transmitted without prior written permission of the owner.
The UJT can be reproduced, distributed, or transmitted without prior written permission of the owner.
The UJT is made entirely of a heavily doped n-region.
The UJT is made entirely of a heavily doped n-region.
Recording of the UJT material is allowed for commercial purposes.
Recording of the UJT material is allowed for commercial purposes.
The UJT is mainly popular due to its low switching speed.
The UJT is mainly popular due to its low switching speed.
UJTs are commonly used in phase control and timing circuits.
UJTs are commonly used in phase control and timing circuits.
Any form of reproduction of the material is allowed without prior permission.
Any form of reproduction of the material is allowed without prior permission.
IGBT combines the advantages of a power BJT and a power MOSFET.
IGBT combines the advantages of a power BJT and a power MOSFET.
The UJT is not used in oscillator circuit design.
The UJT is not used in oscillator circuit design.
Both power MOSFET and IGBT are the continuously controllable current-controlled switch.
Both power MOSFET and IGBT are the continuously controllable current-controlled switch.
The DIAC is a three-terminal device like the BJT.
The DIAC is a three-terminal device like the BJT.
In the DIAC, the emitter is highly doped, the collector is lightly doped, and the base is moderately doped.
In the DIAC, the emitter is highly doped, the collector is lightly doped, and the base is moderately doped.
The construction of DIAC closely resembles that of a transistor.
The construction of DIAC closely resembles that of a transistor.
DIAC can be reproduced, distributed, or transmitted without permission for personal academic use.
DIAC can be reproduced, distributed, or transmitted without permission for personal academic use.
In the BJT, all three layers are equally doped.
In the BJT, all three layers are equally doped.
The DIAC is a four-terminal diode.
The DIAC is a four-terminal diode.
Study Notes
UJT (Unijunction Transistor)
- Consists of a lightly doped n-type silicon bar with ohmic contacts on either side
- Has a small heavily doped p-region (emitter) alloyed into one side of the bar, forming a p-n junction with the bar
- Has two end connections called base B1 and base B2
- Popular due to its high switching speed
- Applications:
- Triggering SCRs and TRIACs
- Non-sinusoidal oscillators
- Phase control and timing circuits
- Saw tooth generators
- Oscillator circuit design
IGBT (Insulated-Gate Bipolar Transistor)
- Combines the advantages of a power BJT and a power MOSFET
- A continuously controllable voltage-controlled switch
DIAC (Diode AC Switch)
- Construction is similar to a transistor but with major differences
- All three layers (p-n-p or n-p-n) are equally doped
- A two-terminal diode, unlike the three-terminal BJT
- No gradation of doping; emitter is highly doped, collector is lightly doped, and base is moderately doped
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Description
Test your knowledge on the applications of the Unijunction Transistor (UJT). Learn about how the UJT is utilized to trigger SCRs and TRIACs for various electronic functions.
