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Questions and Answers
At what temperature does the conversion of metallurgical grade silicon to trichlorosilane take place?
At what temperature does the conversion of metallurgical grade silicon to trichlorosilane take place?
- 500 degrees Celsius
- 1000 degrees Celsius
- 700 degrees Celsius
- 300 degrees Celsius (correct)
What is the boiling point of trichlorosilane (TCS)?
What is the boiling point of trichlorosilane (TCS)?
- 25 degrees Celsius
- 31.8 degrees Celsius (correct)
- 40 degrees Celsius
- 27 degrees Celsius
In the Siemens process, what type of silicon is produced from the decomposition of trichlorosilane?
In the Siemens process, what type of silicon is produced from the decomposition of trichlorosilane?
- Medium purity silicon
- Low purity silicon
- Ultra-high purity silicon
- High purity silicon (correct)
What gas is released during the reaction between metallurgical grade silicon and hot hydrogen chloride?
What gas is released during the reaction between metallurgical grade silicon and hot hydrogen chloride?
What type of reactor is typically used for the purification of trichlorosilane in the production process?
What type of reactor is typically used for the purification of trichlorosilane in the production process?
What is the final product obtained in the Siemens process?
What is the final product obtained in the Siemens process?
What is the purpose of adding dopant impurity atoms such as boron and phosphorus to the melted silicon in the production of semiconductor-grade silicon?
What is the purpose of adding dopant impurity atoms such as boron and phosphorus to the melted silicon in the production of semiconductor-grade silicon?
In the production of CZOCHRALSKI SILICON, what is used to melt the high-purity semiconductor-grade silicon?
In the production of CZOCHRALSKI SILICON, what is used to melt the high-purity semiconductor-grade silicon?
How is a large single crystal cylindrical ingot extracted from the melt in the CZOCHRALSKI SILICON production?
How is a large single crystal cylindrical ingot extracted from the melt in the CZOCHRALSKI SILICON production?
Which method involves the extraction of polysilicon cylinders from the reactor?
Which method involves the extraction of polysilicon cylinders from the reactor?
What is the process environment usually like during the production of CZOCHRALSKI SILICON?
What is the process environment usually like during the production of CZOCHRALSKI SILICON?
What is done to avoid unwanted stabilities in the melt during crystal growth in CZOCHRALSKI SILICON production?
What is done to avoid unwanted stabilities in the melt during crystal growth in CZOCHRALSKI SILICON production?
What is the main raw material used in the Siemens process for producing Polysilicon?
What is the main raw material used in the Siemens process for producing Polysilicon?
Which type of silicon is commonly used in semiconductor and solar cell industries due to its high purity?
Which type of silicon is commonly used in semiconductor and solar cell industries due to its high purity?
What is the primary impurity that is removed during the production of Electronic grade silicon?
What is the primary impurity that is removed during the production of Electronic grade silicon?
What is the key advantage of using the Czochralski process over other methods for growing silicon crystals?
What is the key advantage of using the Czochralski process over other methods for growing silicon crystals?
Which process involves the reduction of Trichlorosilane to produce Polysilicon?
Which process involves the reduction of Trichlorosilane to produce Polysilicon?
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Study Notes
Trichlorosilane Production
- Trichlorosilane (TCS) is produced through the reaction of metallurgical-grade silicon with hot hydrogen chloride gas in a fluidized bed reactor at around 300°C.
- The boiling point of TCS is 31.8°C, making it easily distilled to produce a high-purity liquid.
- The reaction occurs as follows: Si (MG) + 3HCl → SiHCl3 + H2
Siemens Process
- The Siemens process converts trichlorosilane to solid polysilicon.
- TCS is passed through a chemical vapor deposition (CVD) reactor with hydrogen at a temperature of around 1000-1200°C.
- The TCS decomposes, depositing silicon onto thin, high-purity silicon rods, resulting in electronic-grade (EG) polysilicon.
- The reaction occurs as follows: SiHCl3 + H2 → Si (EG) + 3HCl
Czochralski Silicon Production
- High-purity semiconductor-grade silicon is melted in a crucible at 1425°C.
- Dopant impurity atoms such as boron and phosphorus can be added to the melted silicon to dope it, changing its electrical properties.
- A precisely oriented rod-mounted seed crystal is dipped into the molten silicon and slowly pulled upwards and rotated simultaneously to extract a large, single-crystal cylindrical ingot.
Float Zone Silicon Wafer Fabrication
- The production takes place under a vacuum or inert gaseous atmosphere.
- The process was developed by Henry Theuerer in 1955.
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