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Questions and Answers

What is a diode?

A diode is a two-terminal electronic component that conducts current primarily in one direction.

What type of semiconductor is formed when a trivalent impurity is added to an intrinsic semiconductor?

  • P-type semiconductor (correct)
  • N-type semiconductor
  • Intrinsic semiconductor
  • All of the above
  • What are the majority carriers in a P-type semiconductor?

    Holes

    What type of semiconductor is formed when a pentavalent impurity is added to an intrinsic semiconductor?

    <p>N-type semiconductor</p> Signup and view all the answers

    What is the region called where the p-type and n-type semiconductors are joined?

    <p>P-N Junction</p> Signup and view all the answers

    In a P-n junction, the positive and negative ions are formed as charge carriers.

    <p>False</p> Signup and view all the answers

    What is the depletion region in a P-N junction?

    <p>A region free from movable charge carriers.</p> Signup and view all the answers

    What happens in the forward bias condition of a P-N junction diode?

    <p>Electrons cross from N-type to P-type</p> Signup and view all the answers

    In zero-biased condition, there is ____ external voltage applied.

    <p>no</p> Signup and view all the answers

    Study Notes

    Basic Electronics

    • Diode: A two-terminal component that conducts current primarily in one direction.
    • P-N Junction: Formed when a p-type and n-type semiconductor are joined.
    • P-type Semiconductor: Created when a trivalent impurity is added to a pure semiconductor; holes are majority carriers.
    • N-type Semiconductor: Created when a pentavalent impurity is added to a pure semiconductor; electrons are majority carriers.
    • Barrier Junction/Depletion Region: The region with positive and negative ions at the p-n junction.
    • Potential Barrier: Potential difference across the junction that prevents further movement of charges.
    • Forward Bias: Connecting the positive terminal of the battery to the p-side and the negative terminal to the n-side; reduces the width of the depletion region and allows current flow.
    • Reverse Bias: Connecting the positive terminal of the battery to the n-side and the negative terminal to the p-side; increases the width of the depletion region and restricts current flow.
    • Zero Biased Condition: No external voltage applied; electrons and holes diffuse towards each other across the junction.
    • Diode Current Equation: ID = Is (e^(Vp/nVT) - 1), where Is is the reverse saturation current; Vp is the applied voltage; n is an empirical constant.

    PN Junction Diode Characteristics

    • Forward Resistance: Resistance offered by the diode when forward biased; two types based on voltage(Static(DC), Dynamic(AC)).
    • Reverse Resistance: Resistance offered by the diode when reverse biased; very high in comparison to forward resistance.
    • Static Resistance (Rf): DC voltage across the diode divided by DC current through it.
    • Dynamic Resistance (rf): Change in voltage across the diode divided by the change in current through it .
    • Reverse Saturation Current: Small current that flows through a reverse-biased diode.
    • Reverse Breakdown Voltage: Voltage at which the reverse current increases drastically.

    Rectifiers

    • Rectifier: Device converting alternating current (AC) to direct current (DC) using diodes.
    • Half-Wave Rectifier: Converts only one half-cycle of AC input.
    • Full-Wave Rectifier: Converts both half-cycles of AC input, using two diodes and a center-tapped transformer.
    • Bridge Rectifier: Uses four diodes in a closed loop configuration and does not need a center-tapped transformer.

    Rectifiers with Filters

    • Filter Circuit: Smoothens the pulsating DC output of a rectifier, removing AC components (ripple).
    • Inductor Filter: Blocks AC, passes DC.
    • Capacitor Filter: Blocks DC, passes AC.
    • LC Filter (L Section Filter): Combines inductor and capacitor for better filtering.
    • π-Filter (Π Section Filter): Uses two capacitors and one inductor for better filtering, and reduces ripple.
    • Ripple Factor (RF): Ratio of AC component's RMS value to DC component's RMS value.
    • Efficiency (η): Ratio of DC output power to AC input power.
    • Transformer Utilization Factor (TUF): Ratio of DC power delivered to the load to the AC power rating of the transformer secondary.

    Zener Diode

    • Zener Diode: Heavily doped semiconductor designed for reverse bias operation.
    • Zener Breakdown: A rapid increase in reverse current when a reverse voltage reaches a predetermined level.
    • Avalanche Breakdown: Occurs with high reverse voltage accelerating electrons.

    Cathode Ray Oscilloscope (CRO)

    • CRO: Device for displaying electrical signals as waveforms; uses cathode ray tube (CRT).
    • CRT: Vacuum tube with electron beam, accelerating and focusing anodes, deflection plates, fluorescent screen.
    • Electron Gun: Generates, controls, and focuses electron beam.
    • Voltage Amplification: Amplifies input signal voltage in horizontal/vertical sections.
    • Time Base Generator: Generates sawtooth waveform for horizontal deflection.
    • Horizontal Amplification: Amplifies horizontal time base signal.

    Voltage Regulation

    • Line Regulation: Maintaining constant output voltage as input voltage varies.
    • Load Regulation: Maintaining constant output voltage as load current varies.

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