Semiconductor Laser Structure Quiz

Two layers of gallium arsenide, one doped with a material for n-type and the other with a material for p-type (correct)

Two layers of silicon, one doped with a material for n-type and the other with a material for p-type

Two layers of aluminum oxide, one doped with a material for n-type and the other with a material for p-type

Two layers of germanium, one doped with a material for n-type and the other with a material for p-type

Because their two layers were made from the same compound semiconductor (correct)

Because they were primarily used in home entertainment systems

Because they were initially developed in a home laboratory

Because they emitted light in a homogeneous manner

Inability to operate at high temperatures

Inability to confine the locations of either current carriers or light very well (correct)

Excessive power consumption

Inability to emit light in the visible spectrum

<p>They were not able to confine the locations of either current carriers or light very well (B)</p> Signup and view all the answers