Semiconductor Concepts Quiz - Parts 1 & 2

A model proposing electrons orbit the nucleus like planets around the sun.

A neutron is a subatomic particle that has no electrical charge.

The maximum number can be calculated using the formula 2n², where n is the shell number.

The outermost shell is known as the valence shell, containing valence electrons.

When an atom loses a valence electron, it becomes a positively charged ion (cation).

Silicon is a common example of a semiconductor material used in electronics.

The process of adding impurities to a semiconductor is called doping.

A p-type semiconductor is created by adding trivalent impurities such as boron.

The conduction band is where free electrons are found and can move freely.

An insulator is a material that does not conduct electricity.

Arsenic is an example of an n-type semiconductor impurity, adding free electrons.

The energy gap is the difference between the valence band and conduction band in a semiconductor.

A pentavalent impurity in a semiconductor increases the number of free electrons.

The depletion region in a pn-junction is formed by the recombination of electrons and holes.

The typical barrier voltage for silicon diodes is about 0.7V.

In reverse bias, the depletion region becomes larger due to the absence of charge carriers.

A diode allows current to flow only in the forward bias direction.

The breakdown voltage in reverse bias can lead to overheating and damage if exceeded.

Recombination in semiconductors refers to free electrons falling back into the valence band.

Gold is not typically used in semiconductor doping compared to silicon or germanium.

Intrinsic semiconductors are pure materials, while extrinsic have impurities for enhanced conductivity.

Doping is the process of intentionally adding impurities to a semiconductor to change its properties.

The depletion region in a pn-junction acts as a barrier for charge carrier movement.

Silicon is commonly used in semiconductor devices due to its suitable bandgap and abundance.

In forward bias, a diode allows current to flow easily when the positive voltage is applied to the anode.

If a silicon diode has a barrier voltage of 0.7V and a bias of 1.2V, voltage across it will be 0.5V.

If a pn-junction has forward bias of 5V with a 0.7V drop, the current can be found using Ohm's Law.

Power dissipation in a diode can be calculated by multiplying reverse bias voltage by leakage current.

Common elements used for n-type semiconductor doping include phosphorus and arsenic.

A hole current occurs when electrons jump from one hole to another, contributing to charge flow.