PN Junction Diode Forward Bias

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Questions and Answers

What happens to the potential barrier when a forward-bias voltage is applied across a pn junction?

  • It remains the same
  • It is increased
  • It is eliminated
  • It is lowered (correct)

What is the purpose of the boundary conditions in the pn junction?

  • To determine the majority carrier concentrations
  • To find the depletion region width
  • To calculate the electric field in the junction
  • To relate the minority carrier concentrations at the space charge edge (correct)

What type of equation is used to describe the behavior of excess minority carriers?

  • Poisson's equation
  • Schrödinger equation
  • Drift-diffusion equation
  • Ambipolar transport equation (correct)

What is the result of the diffusion currents in the pn junction?

<p>Ideal current-voltage relationship (A)</p> Signup and view all the answers

What happens to excess carriers in the space charge region of a reverse-biased pn junction?

<p>They are swept out by the electric field (A)</p> Signup and view all the answers

What is the other component of the reverse-biased diode current, besides the ideal current?

<p>Reverse-biased generation current (D)</p> Signup and view all the answers

What is the effect of a forward-bias voltage on the flow of holes and electrons across the pn junction?

<p>It decreases the potential barrier (D)</p> Signup and view all the answers

What is the outcome of the ambipolar transport equation in the context of the pn junction?

<p>It yields the minority carrier hole and electron concentrations (B)</p> Signup and view all the answers

What is the primary role of the minority carrier diffusion currents in the pn junction?

<p>To yield the ideal current-voltage relationship (C)</p> Signup and view all the answers

What occurs to the minority carrier hole and electron concentrations in the pn junction?

<p>They have gradients (C)</p> Signup and view all the answers

In which region of the pn junction are excess carriers generated?

<p>The space charge region (A)</p> Signup and view all the answers

What is the result of the interaction between the electric field and excess carriers in the reverse-biased pn junction?

<p>They generate the reverse-biased generation current (B)</p> Signup and view all the answers

What is the relationship between the minority carrier concentrations in the n and p regions?

<p>They are derived from the boundary conditions (B)</p> Signup and view all the answers

What is the primary purpose of the boundary conditions in the context of the pn junction?

<p>To relate the minority carrier concentrations in the n and p regions (C)</p> Signup and view all the answers

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Study Notes

Forward-Biased PN Junction

  • When a forward-bias voltage is applied, the potential barrier is lowered, allowing holes from the p region and electrons from the n region to flow across the junction.
  • Boundary conditions are derived for minority carrier hole concentration in the n region at the space charge edge and minority carrier electron concentration in the p region at the space charge edge.
  • Injected holes in the n region and electrons in the p region become excess minority carriers.

Excess Minority Carrier Behavior

  • The behavior of excess minority carriers is described by the ambipolar transport equation developed in Chapter 6.
  • Solving the ambipolar transport equation and using the boundary conditions, steady-state minority carrier hole and electron concentrations in the n region and p region are derived.

Minority Carrier Diffusion Currents

  • Gradients exist in minority carrier hole and electron concentrations, resulting in minority carrier diffusion currents in the pn junction.
  • These diffusion currents yield the ideal current-voltage relationship of the pn junction diode.

Reverse-Biased PN Junction

  • Excess carriers are generated in the space charge region of a reverse-biased pn junction.
  • These carriers are swept out by the electric field, creating the reverse-biased generation current, another component of the reverse-biased diode current.

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