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Questions and Answers
What is the energy equivalent of a substance with a mass of 1 g?
What is the energy equivalent of a substance with a mass of 1 g?
- 9 x 10^{13} J (correct)
- 18 x 10^{6} J
- 9 x 10^{6} J
- 18 x 10^{13} J
What mass of tritium will remain undecayed after 50 years if the initial mass is 64 mg and the half-life is 12.5 years?
What mass of tritium will remain undecayed after 50 years if the initial mass is 64 mg and the half-life is 12.5 years?
- 4 mg
- 16 mg
- 32 mg
- 8 mg (correct)
In a common emitter amplifier, the input AC signal is applied across which junction?
In a common emitter amplifier, the input AC signal is applied across which junction?
- Reverse biased collector-base junction
- Forward biased collector-base junction
- Forward biased emitter-base junction (correct)
- Reverse biased emitter-base junction
If A = 1 and B = 0 in Boolean algebra, what is the value of A + B?
If A = 1 and B = 0 in Boolean algebra, what is the value of A + B?
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What is the electron density in doped germanium if the hole density increases to 45 x 10^{22} m^{-3} from 3 x 10^{16} m^{-3}?
What is the electron density in doped germanium if the hole density increases to 45 x 10^{22} m^{-3} from 3 x 10^{16} m^{-3}?
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Study Notes
Energy Equivalent
- Energy equivalent for 1 g of mass can be calculated using Einstein's equation E=mc².
- The correct energy equivalent is (a) 18 x 10¹³ J.
Tritium Half-Life
- Tritium has a half-life of 12.5 years.
- Starting with 64 mg, after 50 years, the remaining mass can be calculated through half-life formula.
- Final undetected mass is (b) 8 mg.
CE Amplifier Input
- In a Common Emitter (CE) amplifier, input AC signal is applied across the (a) forward biased emitter-base junction to achieve amplification.
Boolean Algebra
- For the values A = 1 and B = 0, the result of A + B in Boolean algebra is (c) A.
Doped Germanium Electron Density
- In pure germanium at room temperature, the density of electron-hole pairs is 3 x 10¹⁶ m⁻³.
- After doping with aluminium, hole density increases to 45 x 10²² m⁻³.
- The resultant electron density in doped germanium is (a) 1 x 10¹⁰ m⁻³.
DC Current Gain in Transistor
- The DC common emitter current gain is a crucial parameter in transistor performance, defined by the relationship between emitter resistance (Re) and collector current (Ic).
- Example given: Ic = 50. Specific values or context not provided.
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