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If a thin long solenoid of radius 'a' is placed in a substance as shown in the figure, the value of angle of dip (theta) there is:
If a thin long solenoid of radius 'a' is placed in a substance as shown in the figure, the value of angle of dip (theta) there is:
If for a glass prism ABC of refractive index (\sqrt{3}) is placed in air as shown in the figure. The value of angle of emergence 'e' will be:
If for a glass prism ABC of refractive index (\sqrt{3}) is placed in air as shown in the figure. The value of angle of emergence 'e' will be:
A rod 'X' when suspended in a magnetic field aligns itself perpendicular to the magnetic field as shown below. (\newline) _____
| |
S
(\rightarrow) -----(\rightarrow) -----(\rightarrow) -----(\rightarrow) -----(\rightarrow)
_____
| |
N
Statement I: The susceptibility of the material of rod 'X' is small and negative.
Statement II: When placed in a non-uniform magnetic field rod 'X' tends to move slowly from the weaker field to the stronger field.
[ ] Both I and II are true.
[ ] only I is true.
[ ] only II is true.
[ ] Neither I or II is true.
A rod 'X' when suspended in a magnetic field aligns itself perpendicular to the magnetic field as shown below. (\newline) _____
| |
S
(\rightarrow) -----(\rightarrow) -----(\rightarrow) -----(\rightarrow) -----(\rightarrow)
_____
| |
N
Statement I: The susceptibility of the material of rod 'X' is small and negative.
Statement II: When placed in a non-uniform magnetic field rod 'X' tends to move slowly from the weaker field to the stronger field.
[ ] Both I and II are true.
[ ] only I is true.
[ ] only II is true.
[ ] Neither I or II is true.
Both I and II are true.
Magnetic moment for three circular current loops as calculated using magnetic moment formula: (\mu= NIA)
No. of turns
Area of the loop (m2)
Current passing in the loop (ampere)
Magnetic moment
50
2.5
2
M1
25
4
2
M2
25
5
1.5
M3
Compare the magnetic moment (a) M1 = M2 = M3 (b) M2 > M1 > M3 (c) M2 > M3 > M1 (d) M1 > M2 > M3
Magnetic moment for three circular current loops as calculated using magnetic moment formula: (\mu= NIA)
| No. of turns | Area of the loop (m2) | Current passing in the loop (ampere) | Magnetic moment |
|---|---|---|---|
| 50 | 2.5 | 2 | M1 |
| 25 | 4 | 2 | M2 |
| 25 | 5 | 1.5 | M3 |
| Compare the magnetic moment (a) M1 = M2 = M3 (b) M2 > M1 > M3 (c) M2 > M3 > M1 (d) M1 > M2 > M3 |
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Alternating emf (E = 420 sin 100 (\pi)t) is the peak value of inductance of 1H.
Alternating emf (E = 420 sin 100 (\pi)t) is the peak value of inductance of 1H.
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For Questions 13 to 16, two statements are given labelled Reason (R) and Assertion (A), Select from the option as given below.
[ ] Assertion and Reason are true
[ ] Assertion and Reason are true but Reason is NOT the correct explanation of Assertion.
[ ] Assertion is true but Reason is NOT the correct explanation of Assertion.
[ ] Both Assertion and Reason are false.
For Questions 13 to 16, two statements are given labelled Reason (R) and Assertion (A), Select from the option as given below. [ ] Assertion and Reason are true [ ] Assertion and Reason are true but Reason is NOT the correct explanation of Assertion. [ ] Assertion is true but Reason is NOT the correct explanation of Assertion. [ ] Both Assertion and Reason are false.
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Assertion (A): In the energy band diagram of n-type semiconductor, the donor energy level ED is slightly above the bottom Ec of the conduction band.
Reason (R): For p-type semiconductor, EA is slightly below the top of the valence band.
Assertion (A): In the energy band diagram of n-type semiconductor, the donor energy level ED is slightly above the bottom Ec of the conduction band. Reason (R): For p-type semiconductor, EA is slightly below the top of the valence band.
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Assertion (A): The diffusion current in a n-side of p-n junction occurs due to the formation of a depletion region.
Reason (R): The diffusion current in a strong electric field across a surface.
Assertion (A): The diffusion current in a n-side of p-n junction occurs due to the formation of a depletion region. Reason (R): The diffusion current in a strong electric field across a surface.
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Assertion (A): Equipotential surfaces are farther apart in the region of weak field.
Reason (R): Equipotential surfaces are closer together in the regions of strong field
Assertion (A): Equipotential surfaces are farther apart in the region of weak field. Reason (R): Equipotential surfaces are closer together in the regions of strong field
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A coil of 100 turns carries a current of 5 mA and creates a magnetic flux of 10-5 weber. The inductance is:
A coil of 100 turns carries a current of 5 mA and creates a magnetic flux of 10-5 weber. The inductance is:
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Study Notes
Refractive Index and Angle of Emergence
- A glass prism with refractive index √3 is placed in air
- Angle of emergence will be 45 degrees.
Magnetic Susceptibility and Magnetic Field
- A rod (X) aligns perpendicular to a uniform magnetic field.
- Statement I: The susceptibility of the material of rod X is small and negative is TRUE.
- Statement II: When placed in a non-uniform magnetic field, rod X tends to move from a weaker field to a stronger field, IS TRUE.
Inductance and Current
- A coil with 100 turns carries a 5mA current and produces a 10⁻⁵ weber magnetic flux.
- The inductance is 0.02 mH.
Magnetic Moment Comparison
- Three circular current loops (Loop 1, 2, 3) with different number of turns, areas and currents are given.
- The magnetic moments M1, M2, and M3 are to be compared.
- Insufficient data to determine the exact relationships between magnetic moments.
Alternating EMF and Peak Current
- Alternating emf (E = 220 sin 100πt) is applied across an inductor with an inductance 'h'.
- The peak value of the current is 22 A.
p-n Junction Diffusion Current
- Assertion: Diffusion current in a p-n junction is from the p-side to the n-side.
- Reason: Diffusion current is due to the formation of a strong electric field across the depletion region is FALSE.
Equipotential Surface Work
- Assertion: No work is done in moving a test charge across an equipotential surface.
- Reason: Equipotential surfaces are closer together in strong fields and farther apart in weak fields is TRUE.
Energy Band Diagram of Semiconductors
- Assertion (A): In the energy band diagram of n-type Si, the donor energy level (ED) is slightly above the conduction band (Ec).
- Reason (R): In p-type semiconductors, the acceptor energy level (EA) is slightly below the top of the valence band (Ev) is TRUE.
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Description
This quiz covers important concepts in physics including refractive index, magnetic susceptibility, and inductance. Understand the principles of light behavior in prisms, the effects of magnetic fields on materials, and how to calculate inductance in coils. Test your knowledge on these foundational topics in electromagnetism and optics.
