N-Channel Enhancement MOSFET Principle

The N-channel enhancement type Mosfet operates by controlling the flow of current between the source and drain terminals using the voltage applied to the gate terminal. When a positive voltage is applied to the gate, it creates an electric field that attracts free electrons from the N-type substrate, allowing current to flow between the source and drain.

The gate terminal in N-channel enhancement type Mosfet controls the flow of current between the source and drain terminals by creating an electric field that attracts or repels free electrons in the N-type substrate, thus modulating the conductive channel between the source and drain.

The N-channel enhancement type Mosfet requires a positive voltage applied to the gate to create a conductive channel between the source and drain, while the N-channel depletion type Mosfet already has a conductive channel and requires a negative voltage applied to the gate to reduce the channel conductivity.