Podcast
Questions and Answers
What is the relationship between the inversion condition Ï•s and Ï•F?
What is the relationship between the inversion condition Ï•s and Ï•F?
- They are unrelated
- They are inversely proportional
- They are directly proportional
- They are equal (correct)
At the onset of surface inversion in a MOS structure, how can the maximum depletion region depth be determined?
At the onset of surface inversion in a MOS structure, how can the maximum depletion region depth be determined?
- By using the inversion condition Ï•s = - Ï•F (correct)
- By ignoring the surface inversion condition
- By increasing the gate bias voltage
- By decreasing the drain bias voltage
What is the mode of operation dependent on in a MOS system?
What is the mode of operation dependent on in a MOS system?
- Drain-source voltage only
- Gate bias voltage, drain voltage, source voltage (correct)
- Gate-source voltage, drain-source voltage
- Gate-drain voltage, source-drain voltage
According to convention, which terminal is considered as the source in an MOS system?
According to convention, which terminal is considered as the source in an MOS system?
In which region of operation does an NMOS have zero channel current (Ids = 0)?
In which region of operation does an NMOS have zero channel current (Ids = 0)?
What assumption does the long-channel model make about the current through an OFF transistor?
What assumption does the long-channel model make about the current through an OFF transistor?
What is the reason behind calling these capacitances 'junction' capacitances?
What is the reason behind calling these capacitances 'junction' capacitances?
Which capacitances are we particularly concerned with in this context?
Which capacitances are we particularly concerned with in this context?
What factor highly influences the junction capacitances discussed?
What factor highly influences the junction capacitances discussed?
What defines the area for the n+ / p junction in relation to the diffusion region beneath the gate?
What defines the area for the n+ / p junction in relation to the diffusion region beneath the gate?
Which type of junction involves a diffusion region to a channel-stop implant on the side (sidewall)?
Which type of junction involves a diffusion region to a channel-stop implant on the side (sidewall)?
What technology was developed by Julius Edgar Lilienfeld in 1925?
What technology was developed by Julius Edgar Lilienfeld in 1925?
Which year saw the development of Si BJT technology at Bell Labs?
Which year saw the development of Si BJT technology at Bell Labs?
Who invented the first Integrated Circuit in 1961?
Who invented the first Integrated Circuit in 1961?
What phenomenon causes the substrate semiconductor to become n-type at the surface?
What phenomenon causes the substrate semiconductor to become n-type at the surface?
Which technology led to the increase in electron density at the surface compared to the bulk substrate?
Which technology led to the increase in electron density at the surface compared to the bulk substrate?
In a MOS structure, where does the positive gate potential attract additional minority carriers?
In a MOS structure, where does the positive gate potential attract additional minority carriers?
