17 Questions
What is the relationship between the inversion condition ϕs and ϕF?
They are equal
At the onset of surface inversion in a MOS structure, how can the maximum depletion region depth be determined?
By using the inversion condition ϕs = - ϕF
What is the mode of operation dependent on in a MOS system?
Gate bias voltage, drain voltage, source voltage
According to convention, which terminal is considered as the source in an MOS system?
The terminal at a lower voltage
In which region of operation does an NMOS have zero channel current (Ids = 0)?
Cutoff region
What assumption does the long-channel model make about the current through an OFF transistor?
It is zero
What is the reason behind calling these capacitances 'junction' capacitances?
Due to the PN junctions formed between the two materials
Which capacitances are we particularly concerned with in this context?
Csb and Cdb
What factor highly influences the junction capacitances discussed?
Bias voltages
What defines the area for the n+ / p junction in relation to the diffusion region beneath the gate?
W·xj
Which type of junction involves a diffusion region to a channel-stop implant on the side (sidewall)?
n+ / p+ junction
What technology was developed by Julius Edgar Lilienfeld in 1925?
MESFET
Which year saw the development of Si BJT technology at Bell Labs?
1954
Who invented the first Integrated Circuit in 1961?
Kilby
What phenomenon causes the substrate semiconductor to become n-type at the surface?
Ion implantation
Which technology led to the increase in electron density at the surface compared to the bulk substrate?
$E_i < E_{FP}$
In a MOS structure, where does the positive gate potential attract additional minority carriers?
Bulk substrate
Test your knowledge on the historical perspective and evolution of integrated circuits and VLSI technology. Questions may include key milestones such as Julius Edgar Lilienfeld's MESFET patent and the development of CMOS technology.
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